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We have developed a multilayer mirror for extreme ultraviolet (EUV) radiation that has low reflectance for IR radiation at 10.6 μm wavelength. The mirror is based on a multilayer coating comprising alternating layers of diamondlike carbon and silicon, for which we demonstrate an EUV reflectance of up to 49.7%. We have made a functional prototype in which the multilayer coating is included as part of an antireflection coating for IR radiation, resulting in reflectance values of 42.5% and 4.4% for EUV and IR, respectively. The mirror can replace a standard Mo/Si mirror in an EUV lithography tool to form an efficient solution for the suppression of unwanted CO_2 laser radiation.

We demonstrate, both theoretically and experimentally, that special spectral-purity-enhancing multilayer mirror systems can be designed and fabricated to substantially reduce the level of out-of-band radiation expected in an extreme ultraviolet lithographic tool. A first proof of principle of applying such spectral-purity-enhancement layers showed reduced out-of-band reflectance by a factor of five, while the in-band reflectance is only 4.5% (absolute) less than for a standard capped multilayer.