Search

Recientemente se ha generalizado el uso del sistema vesical imaging-reporting and data(VI-RADS). Nos propusimos validar el rendimiento diagnóstico del VI-RADS para diferenciar el cáncer vesical músculo-iinvasivo (CVMI) del cáncer vesical no músculo-invasivo (CVNMI) en un contexto de práctica clínica real.

We report on the design, fabrication and characterization of red $\mu $ -LEDs directly grown on large-scale silicon wafers through a superior-quality Ge buffer. 300mm Ge/Si substrates with a threading dislocation density (TDD) of ~107 cm−2 were successfully achieved, then followed by the growth and process of visible 649nm AlGaAs-based red emitters. The electro-optical properties of various red $\mu $ -LEDs with diameters ranging from 10 to $100\mu \text{m}$ are investigated, showing promising performances. Those results coupled with numerical analysis with a model based on transfer-matrix with dipole source-terms help us better identify the main challenges limiting the efficiencies of our devices, while providing optimization routes to alleviate them. We believe that these results could pave the way for a monolithic large-scale and low-cost integration of red $\mu $ -LEDs on 300mm Si-CMOS driving circuits and for the fabrication of high-resolution RGB microdisplays that see use in various applications in optoelectronics.

We report on hybrid Si/III-V lasers with adiabatic coupling. The proposed architectures, based on adiabatic mode transformers, allow laser mode to experience maximal gain available in the III-V region while maintaining a high coupling efficiency (>95%) to Si-waveguides. Hybrid Fabry-Pérot laser and integrated racetrack laser, photodetector and waveguide-to-fiber surface grating coupler are presented.

For about ten years, we have been developing InP on Si devices under different projects focusing first on lasers then on semicompact lasers. For aiming the integration on a CMOS circuit and for thermal issue, we relied on SiO2direct bonding of InP unpatterned materials. After the chemical removal of the InP substrate, the heterostructures lie on top of silicon waveguides of an SOI wafer with a separation of about 100nm. Different lasers or photodetectors have been achieved for off-chip optical communication and for intra-chip optical communication within an optical network. For high performance computing with high speed communication between cores, we developed InP microdisk lasers that are coupled to silicon waveguide and produced 100W of optical power and that can be directly modulated up to 5G at different wavelengths. The optical network is based on wavelength selective circuits with ring resonators. InGaAs photodetectors are evanescently coupled to the silicon waveguide with an efficiency of 0.8A/W. The fabrication has been demonstrated at 200mm wafer scale in a microelectronics clean room for CMOS compatibility. For off-chip communication, silicon on InP evanescent laser have been realized with an innovative design where the cavity is defined in silicon and the gain localized in the QW of bonded InP hererostructure. The investigated devices operate at continuous wave regime with room temperature threshold current below 100 mA, the side mode suppression ratio is as high as 20dB, and the fibercoupled output power is ~7mW. Direct modulation can be achieved with already 6G operation.