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Objective:The current study aimed to evaluate the contribution(s) of specific opioid receptor systems to the analgesic and detrimental effects of morphine, observed after spinal cord injury in prior studies.Study design:We used specific opioid receptor agonists to assess the effects of μ- (DAMGO), δ- (DPDPE) and κ- (GR89696) opioid receptor activation on locomotor (Basso, Beattie and Bresnahan scale, tapered beam and ladder tests) and sensory (girdle, tactile and tail-flick tests) recovery in a rodent contusion model (T12). We also tested the contribution of non-classic opioid binding using [+]- morphine.Methods:First, a dose–response curve for analgesic efficacy was generated for each opioid agonist. Baseline locomotor and sensory reactivity was assessed 24 h after injury. Subjects were then treated with an intrathecal dose of a specific agonist and re-tested after 30 min. To evaluate the effects on recovery, subjects were treated with a single dose of an agonist and both locomotor and sensory function were monitored for 21 days.Results:All agonists for the classic opioid receptors, but not the [+]- morphine enantiomer, produced antinociception at a concentration equivalent to a dose of morphine previously shown to produce strong analgesic effects (0.32 μmol). DAMGO and [+]- morphine did not affect long-term recovery. GR89696, however, significantly undermined the recovery of locomotor function at all doses tested.Conclusions:On the basis of these data, we hypothesize that the analgesic efficacy of morphine is primarily mediated by binding to the classic μ-opioid receptor. Conversely, the adverse effects of morphine may be linked to activation of the κ-opioid receptor. Ultimately, elucidating the molecular mechanisms underlying the effects of morphine is imperative to develop safe and effective pharmacological interventions in a clinical setting.Setting:USA.Sponsorship:Grant DA31197 to MA Hook and the NIDA Drug Supply Program.

Brazilian industry produces huge amounts of tannery sludge as residues, which is often disposed by landfilling or land application. However, consecutive amendment of such composted industrial wastes may cause shifts in soil microbial biomass (SMB) and enzyme activity. This study aimed to evaluate SMB and enzyme activity after 3-year consecutive composted tannery sludge (CTS) amendment in tropical sandy soils. Different amounts of CTS (0.0, 2.5, 5.0, 10.0, and 20.0 t ha−1) were applied to a sandy soil. The C and N contents of SMB, basal and substrate-induced respiration, respiratory quotient (qCO2), and enzyme activities were determined in the soil samples collected after CTS amendment for 60 d at the third year. After 3 years, significant changes were found in soil microbial properties in response to different CTS amounts applied. The organic matter and Cr contents significantly increased with increasing CTS amounts. SMB and soil respiration peaked following amendment with 10.0 and 20.0 t ha−1of CTS, respectively, while qCO2was not significantly affected by CTS amendment. However, soil enzyme activity decreased significantly with increasing CTS amounts. Consecutive CTS amendment for 3 years showed inconsistent and contrasting effects on SMB and enzyme activities. The decrease in soil enzyme activities was proportional to a substantial increase in soil Cr concentration, with the latter exceeding the permitted concentrations by more than twofold. Thus, our results suggest that a maximum CTS quantity of 5.0 t ha−1can be applied annually to tropical sandy soil, without causing potential risks to SMB and enzyme activity.

Single layer films and a multilayer structure of SRO Silicon Rich Oxide have been prepared by LPCVD Low Pressure Chemical Vapour Deposition and characterized by FTIR, SIMS, XPS, TEM and AFM measurements. The stacked structure is composed of alternating layers of SRO with high Si content and SRO with low Si content. The layered structure is confirmed by SIMS and TEM measurements. The composition of the materials is discussed. Besides Si nanocrystals, the existence of agglomerates of silicon oxide with structure close to fused silica and the existence of oxynitrides is evidenced in the films with high Si content. © 2009 WILEYVCH Verlag GmbH & Co. KGaA, Weinheim

A new fabrication method for ion-sensitive field-effect transistors (ISFETs) with back contacts has been developed. The connections between the drain and the source diffusions and the back contacts are achieved by diffusing impurities from both sides of the wafer, until a conductive path has been formed through the thickness of the wafer. After these conductive paths are built, an FET structure is constructed on the front face of the chip. The back access allows for a clean face where the chemically active gate is placed. This contrasts with more traditional devices where the gate and the contacts are placed on the same face of the transistor. It is also set apart from devices featuring back contacts with anisotropically etched pits that require a different processing laboratory separated from the main clean-room facilities. The aim of the present work is to produce ISFET-based chemical sensors with back contacts featuring a clean technology using standard silicon foundry facilities. These sensors are more compact, easier to encapsulate and with a longer lifetime when compared to devices produced with more traditional structures.

The key fabrication steps and the write/erase characteristics of a new memory metal-insulator-silicon transistor are presented. The memory cell is composed of a single silicon gate and a stacked SiOx LPCVD film as an active memory film. With this new arrangement, the memory device shows excellent endurance.