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Present study demonstrates the feasibility of using oxides of Sn to fabricate the p-njunction diode and reports the device characteristics. Reactive thermal evaporation method was used to fabricate the p-type SnO and n-type SnO2multilayer thin films. The x-ray diffraction (XRD) and Raman spectra depict the presence of both SnO and SnO2layers. The interface of the p-njunction analyzed by cross-sectional transmission electron microscope (TEM) images and selected area electron diffraction (SAED) pattern confirmed the presence of SnO-SnO2layers. The diode shows rectifying current-voltage characteristics with forward threshold voltage of 3.5 V.