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Semiconductor Energy Laboratory Co. Ltd. has been issued a patent for a semiconductor device. The patent describes a semiconductor device that includes oxide semiconductor layers and aims to suppress the deterioration of electrical characteristics that occur when transistors are miniaturized. The device also aims to have a high degree of integration, reduced power consumption, high reliability, and the ability to retain data even when the power supply is stopped. The patent provides detailed descriptions and claims for the semiconductor device. [Extracted from the article]

A patent has been issued for a semiconductor device and a method for manufacturing it. The patent, filed by inventor Shunpei Yamazaki, relates to a semiconductor device that includes an oxide semiconductor. The device aims to address the challenge of fluctuation in electric characteristics caused by miniaturization. The patent describes a method that involves providing a region containing a dopant in an oxide semiconductor film to suppress the short-channel effect. The assignee for the patent is Semiconductor Energy Laboratory Co. Ltd. [Extracted from the article]

Describes the new amorphous devices and explain why they work as they do. Similarities in behavior between crystals and noncrystalline solids; History of amorphous threshold and memory switches; Methods for converting an insulator into a conductor; Overview of switching mechanisms involving amorphous systems.

"In this specification and the like, a semiconductor device generally means a device that can function by utilizing semiconductor characteristics. A silicon-based semiconductor material is widely known as a material for a semiconductor thin film that can be used for a transistor. A transistor and a semiconductor circuit are embodiments of semiconductor devices. [Extracted from the article]

"As a means for achieving the above object, in a transistor including an oxide semiconductor, a region containing a dopant is provided in an oxide semiconductor film including a channel formation region. Field of the Invention "The present invention relates to a semiconductor device including an oxide semiconductor and a method for manufacturing the semiconductor device. A transistor in this specification is a semiconductor device, and an electrooptic device, a semiconductor circuit, and an electronic device including the transistor are all semiconductor devices. [Extracted from the article]

A transistor comprising: a gate electrode layer; an oxide semiconductor layer; and source and drain electrode layers in contact with the oxide semiconductor layer, wherein the gate electrode layer and the oxide semiconductor layer overlap with each other, wherein the oxide semiconductor layer comprises indium, gallium, and zinc, wherein the oxide semiconductor layer comprises a first oxide semiconductor layer and a second oxide semiconductor layer over the first oxide semiconductor layer, wherein an atomic ratio of Ga with respect to In in the second oxide semiconductor layer is higher than an atomic ratio Ga with respect to In in the first oxide semiconductor layer, wherein the first oxide semiconductor layer comprises a first crystal part, wherein the second oxide semiconductor layer has c-axis alignment and comprises a second crystal part and a third crystal part, and wherein a lattice fringe in the second crystal part and a lattice fringe in the third crystal part have different directions. "One embodiment of the present invention is a semiconductor device including, over an insulating surface, a stack in which a first oxide semiconductor layer and a second oxide semiconductor layer are sequentially formed, and a third oxide semiconductor layer. [Extracted from the article]

In this chapter, we describe the fabrication and functions of organic superlattices. Amorphous superlattices are easy to fabricate and can be produced vert rapidly because there is no restriction of epitaxial relations. However, ordinary semiconductor materials do not function electronically because of the charge traps abundant in amorphous state. Organic semiconductors are rare exception of this problem because they can function well in the amorphous form, for example, in organic light emitting diodes. We demonstrated the useful function of amorphous organic superlattices by making "tricolor" superlattices with p-type, n-type and piezoelectric layers. We confirmed that the superlattice showed photoresponsive mechanical motion. [ABSTRACT FROM AUTHOR]

"In another embodiment, the method of forming the electrical device includes forming an amorphous semiconductor material on a metal surface of a memory device, in which the memory device is vertically stacked atop a first transistor. In one embodiment, the device includes a vertically stacked structure of a memory device overlying a lower transistor, and an upper transistor comprising crystalline semiconductor material directly atop a metal surface of the memory device. "In one embodiment, the method of forming an electrical device includes forming an amorphous semiconductor material on a metal surface of a memory device, in which the memory device is vertically stacked atop a first transistor. [Extracted from the article]

Alternatively, a semiconductor device including an oxide semiconductor having few oxygen vacancies can be provided. Another object is to provide a semiconductor device including an oxide semiconductor having few oxygen vacancies. A transistor and a semiconductor circuit are embodiments of semiconductor devices. [Extracted from the article]

The article provides information on the area of solid-state physics that has been examined by a committee of the National Academy of Sciences in a report called Fundamentals of Amorphous Semiconductors. The features of the solid-state devices pioneered by Energy Conversion Devices Inc. founder Stanford R. Ovshinsky is discussed. Information about the application of a glassy semiconductor in xerography is presented. The possible advantages of amorphous memory devices over the comparison candidates are mentioned.

Keywords: Artificial Neurons; Bioengineering; Biotechnology EN Artificial Neurons Bioengineering Biotechnology 2023 FEB 16 (NewsRx) -- By a News Reporter-Staff News Editor at Blood Weekly -- Researchers detail new data in artificial neurons. Our news reporters obtained a quote from the research from Hebei University: "In this work, the amorphous semiconductor material silicon carbide (SiC) was used as the dielectric to fabricate the memristor with the Ag/SiC/n-Si structure. Keywords for this news article include: Hebei University, Biotechnology, Bioengineering, Artificial Neurons. [Extracted from the article]

The article discusses the advancement in infrared (IR) imaging technology. It mentions the importance of chalcogenide glass in optical design. It outlines several factors to consider in meeting the demand for high-volume IR optics. It notes the distinct challenges of precision-molded chalcogenide lens elements made in high volumes regarding qualification of performance prior to shipment to the customer.

Crystallization kinetics of Fe52Cr18Mo7B16C4Nb3 alloy was evaluated by X-ray diffraction (XRD), differential scanning calorimetric (DSC) tests and transmission electron microscopy (TEM) observations in this research work. In effect, crystallization and growth mechanism were investigated by using DSC tests at four different heating rates (10, 20, 30, 40 K/min). Results showed that a two-step crystallization process occurred in the alloy in which α-Fe and Fe3B phases were crystallized, respectively in the structure after heat treatment. Activation energy for the first step of crystallization, i.e. α-Fe was measured to be 421 and 442 kJ/mol according to Kissinger-Starink and Ozawa models, respectively. Further, Avrami exponent calculated from DSC curves was 1.6 and a two-dimensional diffusion controlled growth mechanism with decreasing nucleation rate was observed in the alloy. Moreover, it was known from the TEM observations that crystalline α-Fe phase nucleated in the structure of the alloy in an average size of 10 nm and completely mottled morphology. [Copyright &y& Elsevier]

Minor alloying plays an important role in the synthesis and improvement of thermal stability of bulk metallic glasses (BMGs). The present study was conducted to investigate the effect of minor additions of Y, Ti and Nb on the crystallization behavior and the thermal properties of Zr64.5Ni15.5Al11.5Cu8.5 alloy. Thermal parameters and the activation energies for crystallization were calculated for four (Zr0.645Ni0.155Al0.115-Cu0.085)100- x M x (M=Y, Ti and Nb, while x=0, 2 at.%) alloys. The present alloys have wide supercooled liquid region of ≥87 K. Maximum activation energy was found to be greater than 300 kJ/mol for the base alloy. Four crystalline phases were identified in the samples annealed at 823 K for 20 min. Reduced glass transition temperature (T rg) and other thermal parameters such as γ, δ and β were improved by Y and Ti addition. Nb addition resists crystallization below annealing temperature 713 K, however, its effect on thermal properties is not very promising. [Copyright &y& Elsevier]

Abstract: Organosilicate glass (OSG) is a material that is used as a dielectric in advanced integrated circuits. It has a network structure similar to that of amorphous silica where a fraction of the Si–O bonds have been replaced by organic groups. It is well known from prior work that OSG is sensitive to subcritical crack growth as water molecules in the environment are transported to the crack tip and assist in rupturing Si–O bonds at the crack tip. In this study, we demonstrate that exposure of an OSG containing film stack to water prior to fracture results in degradation of the adhesion of the film stack. This degradation is the result of the diffusion of water into the film stack. We propose a quantitative model to predict adhesion degradation as a function of exposure time by coupling the results of independent subcritical crack growth measurements with diffusion concentration profiles. The model agrees well with experimental data and provides a novel method for measuring the water diffusion coefficient in film stacks that contain OSG. This study has important implications for the reliability of advanced integrated circuits. [Copyright &y& Elsevier]

Discusses the use of amorphous-silicon technology on image sensors. Design and performance of thin-film on applications specific integrated circuit (TFA); Information on locally autoadaptive TFA sensor; Effects of complementary metal oxide semiconductor (CMOS) device scaling.

Focuses on the use of amorphous silicon in the development of a new generation of electronic x-ray imaging devices. X-ray imaging with charge-coupled devices; Amorphous silicon imagers; Applications.

The article informs that the low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) are overshadowing standard amorphous-silicon TFT displays. According to DisplaySearch Inc., a research firm, the increased shipments of LTPS TFT displays reduced the market share for active-matrix amorphous-silicon TFT displays by 12% in 2006. Samsung Electronics Co. Ltd. has recently made an announcement regarding the conversion of its amorphous-silicon TFT fabrication plant to LTPS.

The article reports that materials scientist in Great Britain and California have invented the first polymer semiconductor to perform the type of silicon, that is used to drive flat-panel displays. The two classes of semiconductors are polymers, which have proven to be easy to formulated into printable inks and small molecules, make fast transistors but have prove difficult to print. The new polymer beats previous polymers by a factor of a key metric called charge carrier mobility. Meanwhile, the amorphous silicon that drives displays has a mobility of 1 square centimeter per volt-second.

Focuses on the ultrahigh aperture technology, which combined a modified amorphous-silicon active matrix of thin-film transistors (TFT) with polysilicon drivers to be incorporated in a 28-inch diagonal screen by Sharp Corp. Resolution capability; Significance of the combination of amorphous-silicon TFT and polysilicon drivers; Pixel structure of the UHA technology.

Reports on high technology firm Printed Transistor Inc.'s use of an amorphous silicon process for printing transistors developed by researchers from Princeton University. Development of the so-called macrolectronic technique; Features of the prototyping service offered by Printed Transistor to large-area circuits; Critical properties of the macroelectronic technique.

Amorphous silicon has long been the king of flat-panel displays. It began its reign in PC monitors and high-definition TV, then conquered netbooks, e-readers, and smartphones. No other substance was as suitable for the thin-film transistors that sit behind a display?s hundreds of thousands of pixels, turning each one on or off. But soon the dominion of amorphous silicon will pass, because it can?t provide what coming generations of electronic products will require. For one thing, it isn?t fast enough. Next-generation LCD TVs will be refreshed at least 240 times a second, which is two to four times as quick as today?s versions; that way, they?ll provide sharper fast-action sports and movies. Three-dimensional displays will need refresh rates twice again as high, to provide all that fast-motion goodness to each eye. [ABSTRACT FROM PUBLISHER]

The article reports the development of a non-volatile memory by International Business Machines Corp., Macronix International Co. Ltd., and Qimonda AG. The technology, which uses phase-change technologies, is much faster than current flash memory and can be scaled into smaller form factors. The prototype is capable of switching 500 times faster than the conventional flash memory. The said phase-change technology uses a chunk of germanium-antimony semiconductor alloy that can be switched from crystalline phase to a disordered amorphous phase.

The article reports on the development of fast transistors on plastic by researchers at Sarnoff Corp. and Columbia University. Researchers have built working circuits on plastic at the speed of 100 megahertz. The building of the prototype is focused on finding a way to crystallize amorphous silicon that is already integrated on plastic. Thus a laser-based process is developed by James Im, a materials science professor at Columbia University, that aims to heat one narrow band of amorphous silicon at a time.

Cites a study conducted by researchers in Oregon which found the semiconducting aerogels have recently been demonstrated that cast quantum dots into a sparse, crystalline-like matrix with more space than substance. Ability of the porous materials for supersensitive sensors and super-efficient plastic photovoltaics; Explanation about the porous structure having the maximum amount of surface area; Replacement of the oxides as the best way to engineer nanoparticles with a semiconductor.

Describes an amorphous organic semiconductor that serves both as transistor and emitter in active pixel. Use of the material to fabricate a metal-oxide field-effect transistor, creating a single active pixel on a glass substrate.

Reports on a project at National Cheng Kung University's VLSI Laboratory. How performance normally associated with the most demanding semiconductor materials systems is being coaxed from amorphous silicon; Details of the research; Principal advantage of resonant tunneling; Applications.

Reports on Hong Kong-based amorphous-silicon expert Y.C. Chan's development of a design for an optical Viterbi encoder-decoder circuit capable of extremely fast coding. Neural-net-based optical processing arrays as a target application for amorphous-silicon thin-film transistor technology advances.