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A new bidirectional polarization splitting coupler based on a metal thin film perforated with periodic slits and coated with dielectric is proposed and theoretically investigated. The back-side incident light coupled to the metal-dielectric-air waveguide is split and launched into TM plasmonic and TE photonic modes simultaneously. The operation principle is clarified and theoretically illustrated using the fully vectorial aperiodic Fourier modal method. Polarization extinction ratios better than 15 dB and crosstalk less than 15 dB are achieved for both polarizations over C-band ranging from 1530 to 1570 nm.

High-resolution laser patterning offers innovative methods for the manufacturing of three dimensional interconnect devices. The process chain presented in this paper uses cost efficient metal thin-films sputtered on thermoplastic sheets and two-dimensional high speed laser processing, whereas the three-dimensional shape of the end product is realized by deep drawing of the machined sheet. Due to the lower fracture strain of metals in comparison to thermoplastics extensive fragmentation of the deposited metal film occurs during deep drawing; therefore picosecond laser fine structuring is used to provide strain relief in the circuitry and to preserve the conductivity after the drawing process.

We report study of the stability of ultra-thin Al films deposited on GaAs(100) using positron annihilation induced Auger electron spectroscopy (PAES). After the sample was kept for 7 days at 300 K under UHV conditions, the normalized Al PAES intensity decreased by 33.7±4.6%. Over the same time period, the normalized Ga PAES intensity increased by 55.8±4.8%. PAES spectra provide a direct method of confirming the substitution of Ga for Al in the top layer and Ga diffuse into the Al overlayer faster than As. © 2003 Elsevier Science Ltd. All rights reserved.

We report study of the stability of ultra-thin Al films deposited on GaAs(100) using positron annihilation induced Auger electron spectroscopy (PAES). After the sample was kept for 7 days at 300 K under UHV conditions, the normalized Al PAES intensity decreased by 33.7±4.6%. Over the same time period, the normalized Ga PAES intensity increased by 55.8±4.8%. PAES spectra provide a direct method of confirming the substitution of Ga for Al in the top layer and Ga diffuse into the Al overlayer faster than As. © 2003 Elsevier Science Ltd. All rights reserved.