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For the first time, this work presents a novel room temperature time-effective concept to manipulate the crystallization kinetics and magnetic responses of thin films grown on amorphous substrates. Conventionally, metal-induced crystallization is adopted to minimize the crystallization temperature of the upper-layer thin film. However, due to the limited surface area of the continuous metal under-layer, the degree of crystallization is insufficient and post-annealing is required. To expose a large surface area of the metal under-layer, we propose a simple and novel approach of using an Au nanodots array instead of a continuous metallic under-layer to obtain crystallization of upper-layer thin films. Spinel cobalt ferrite (CFO) thin film as a 'model' was deposited on an Au nano-dots array to realize this methodology. Our findings revealed that the addition of quantum-sized Au nano-dots as a metal under-layer dramatically enhanced the crystallization of the cobalt ferrite upper layer at room temperature. The appearance of major X-ray diffraction peaks with high intensity and well-defined crystallized lattice planes observed via transmission electron microscopy confirmed the crystallization of the CFO thin film deposited at room temperature on 4 nm-sized Au nano-dots. This crystallized CFO thin film exhibits 18-fold higher coercivity (H c = 4150 Oe) and 4-fold higher saturation magnetization (M s = 262 emu cm -3 ) compared to CFO deposited without the Au under-layer. The development of this novel concept of room-temperature crystallization without the aid of additives and solvents represents a crucial breakthrough that is highly significant for exploring the green and energy-efficient synthesis of a variety of oxide and metal thin films.

Perpendicular magnetization and precise control over the magnetic easy axis in magnetic thin film is necessary for a variety of applications, particularly in magnetic recording media. A strong (111) orientation is successfully achieved in the CoFe2O4 (CFO) thin film at relatively low substrate temperature of 100 °C, whereas the (311)-preferred randomly oriented CFO is prepared at room temperature by the DC magnetron sputtering technique. The oxygen-deficient porous CFO film after post-annealing gives rise to compressive strain perpendicular to the film surface, which induces large perpendicular coercivity. We observe the coercivity of 11.3 kOe in the 40-nm CFO thin film, which is the highest perpendicular coercivity ever achieved on an amorphous SiO2/Si substrate. The present approach can guide the systematic tuning of the magnetic easy axis and coercivity in the desired direction with respect to crystal orientation in the nanoscale regime. Importantly, this can be achieved on virtually any type of substrate.