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Chen Chen,1 Linjing Wang,1 Li Wang,2 Qi Liu,1 Chunying Wang1 1Institute of Chinese Medicine, Heilongjiang University of Chinese Medicine, Harbin, 150040, People’s Republic of China; 2Harbin Traditional Chinese Medicine Hospital, Harbin, 150076, People’s Republic of ChinaCorrespondence: Chunying WangInstitute of Chinese Medicine, Heilongjiang University of Chinese Medicine, 24 Heping Road, Harbin, 150040, People’s Republic of ChinaTel/Fax +86-18644086608Email wcywyh7680@163.comPurpose: Acute ischemic stroke (AIS) is a leading health problem caused by cerebral ischemia/reperfusion (CI/R). This study aimed to unveil the potential clinical value and mechanism of lncRNA CASC15.Patients and Methods: The expression of CASC15, miR-338-3p was detected by quantitative real-time PCR (qRT-PCR). The correlations between CASC15 and national institutes of health stroke scale (NIHSS) scores or miR-338-3p were evaluated by Pearson correlation. A receiver operating characteristic (ROC) curve was performed to provide the diagnostic value of CASC15. Cell Counting Kit-8 (CCK-8) and flow cytometer were used to detect the condition of cell viability and apoptosis. The levels of interleukin-1beta (IL-1β), interleukin-6 (IL-6), and tumor necrosis factor-alpha (TNF-α) was detected by enzyme-linked immunosorbent assay (ELISA) assay.Results: The expression of CASC15 was increased and the levels of miR-338-3p were decreased in AIS patients. A positive association between CASC15 and NIHSS score and an inverse association between CASC15 and miR-338-3p were revealed by Pearson correlation. CASC15 might discriminate AIS patients from healthy people. Silenced CASC15 exerted neuroprotective roles on cell viability, apoptosis, and inflammation via the miR-338-3p/ETS1 axis.Conclusion: CASC15 might act as a potential diagnostic biomarker for AIS patients. CASC15/miR-338-3p/ETS1 axis played an essential role in cell viability, apoptosis, and neuroinflammation.Keywords: CASC15/miR-338-3p/ETS1, acu

How an interfacial superconductivity emerges during the nucleation and epitaxy is of great importance not only for unveiling the physical insights but also for finding a feasible way to tune the superconductivity via interfacial engineering. In this work, we report the nanoscale creation of a robust and relatively homogeneous interfacial superconductivity (TC ≈ 13 K) on the epitaxial FeTe surface, by van der Waals epitaxy of single-quintuple-layer topological insulator Bi2Te3. Our study suggests that the superconductivity in the Bi2Te3/FeTe heterostructure is generated at the interface and that the superconductivity at the interface does not enhance or weaken with the increase of the Bi2Te3 thickness beyond 1 quintuple layer (QL). The observation of the topological surface states crossing Fermi energy in the Bi2Te3/FeTe heterostructure with the average Bi2Te3 thickness of about 20 QL provides further evidence that this heterostructure may potentially host Majorana zero modes.

How an interfacial superconductivity emerges during the nucleation and epitaxy is of great importance not only for unveiling the physical insights but also for finding a feasible way to tune the superconductivity via interfacial engineering. In this work, we report the nanoscale creation of a robust and relatively homogeneous interfacial superconductivity (TC ≈ 13 K) on the epitaxial FeTe surface, by van der Waals epitaxy of single-quintuple-layer topological insulator Bi2Te3. Our study suggests that the superconductivity in the Bi2Te3/FeTe heterostructure is generated at the interface and that the superconductivity at the interface does not enhance or weaken with the increase of the Bi2Te3 thickness beyond 1 quintuple layer (QL). The observation of the topological surface states crossing Fermi energy in the Bi2Te3/FeTe heterostructure with the average Bi2Te3 thickness of about 20 QL provides further evidence that this heterostructure may potentially host Majorana zero modes.

How an interfacial superconductivity emerges during the nucleation and epitaxy is of great importance not only for unveiling the physical insights but also for finding a feasible way to tune the superconductivity via interfacial engineering. In this work, we report the nanoscale creation of a robust and relatively homogeneous interfacial superconductivity (TC ≈ 13 K) on the epitaxial FeTe surface, by van der Waals epitaxy of single-quintuple-layer topological insulator Bi2Te3. Our study suggests that the superconductivity in the Bi2Te3/FeTe heterostructure is generated at the interface and that the superconductivity at the interface does not enhance or weaken with the increase of the Bi2Te3 thickness beyond 1 quintuple layer (QL). The observation of the topological surface states crossing Fermi energy in the Bi2Te3/FeTe heterostructure with the average Bi2Te3 thickness of about 20 QL provides further evidence that this heterostructure may potentially host Majorana zero modes.

Materials that have a perpendicular magnetic anisotropy (PMA) effect with a high Curie temperature are essential in spintronics applications. Cr2Te3 is a transition-metal chalcogenide that demonstrates a PMA effect but with a relatively low Curie temperature of about 180 K, significantly limiting its practical application. In this work, we reported the epitaxial growth of Cr2Te3 thin films on Al2O3 substrates with a Curie temperature ranging from 165 to 295 K, closely dependent on the thicknesses and lattice constants of the thin films. To study the physical origin of the improved Curie temperature, structural analysis, magneto-transport, and magnetic characterizations were conducted and analyzed in detail. In contrast with previous reports, all the high Curie temperature thin films have electron type carriers instead of hole carriers, which is possibly caused by the Al diffusion from the Al2O3 substrate. On the basis of the structure and chemical analysis, a phenomenological model based on the degree of coupling between ferromagnetic and antiferromagnetic ordering, hosted by the fully occupied and with-vacancy Cr layer alternatively, was proposed to explain the observed Currie temperature enhancement in our samples. These findings indicate that the Curie temperature of Cr2Te3 thin films may potentially be tuned by Al doping, performing as a novel magnetic material suitable for various magnetic applications.

Materials that have a perpendicular magnetic anisotropy (PMA) effect with a high Curie temperature are essential in spintronics applications. Cr2Te3 is a transition-metal chalcogenide that demonstrates a PMA effect but with a relatively low Curie temperature of about 180 K, significantly limiting its practical application. In this work, we reported the epitaxial growth of Cr2Te3 thin films on Al2O3 substrates with a Curie temperature ranging from 165 to 295 K, closely dependent on the thicknesses and lattice constants of the thin films. To study the physical origin of the improved Curie temperature, structural analysis, magneto-transport, and magnetic characterizations were conducted and analyzed in detail. In contrast with previous reports, all the high Curie temperature thin films have electron type carriers instead of hole carriers, which is possibly caused by the Al diffusion from the Al2O3 substrate. On the basis of the structure and chemical analysis, a phenomenological model based on the degree of coupling between ferromagnetic and antiferromagnetic ordering, hosted by the fully occupied and with-vacancy Cr layer alternatively, was proposed to explain the observed Currie temperature enhancement in our samples. These findings indicate that the Curie temperature of Cr2Te3 thin films may potentially be tuned by Al doping, performing as a novel magnetic material suitable for various magnetic applications.