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1. High-Performance ZnO Transistors Processed Via an Aqueous Carbon-Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C

Author

Lin, Yen Hung, Faber, Hendrik, Zhao, Kui, Wang, Qingxiao, Amassian, Aram, McLachlan, Martyn, Anthopoulos, Thomas D., Lin, Yen Hung, Faber, Hendrik, Zhao, Kui, Wang, Qingxiao, Amassian, Aram, McLachlan, Martyn, and Anthopoulos, Thomas D.

Abstract

An aqueous and carbon-free metal-oxide precursor route is used in combination with a UV irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO transistors with electron mobilities exceeding 10 cm2/Vs at temperatures <180°C. Because of its low temperature requirements the method allows processing of high-performance transistors onto temperature sensitive substrates such as plastic.

Published
2013

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