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SrnGaAsn has been synthesized by reacting the stoichiometric combination of the elements in a sealed niobium tube, seeded in a quartz ampule under purified argon at 1200 °C for 24 hours. Single crystal X-ray diffraction data (130 K, a = 16.498(8) A, c = 22.132(12) A) were refined. The compound is isostructural to Cai4AlSbn (tetragonal, Z4i/acd (#142, origin choice 2), Z = 8, J?w = 4.4% for 770 independent reflections). The structure consists of discrete GaAs4 tetrahedra, As3 linear units and isolated As euiions and Sr cations. Optical absorption data is consistent with this new compound being a semiconductor with an optical band gap of approximately 1.44 eV, veiy similar to that of GaAs (1.42 eV). The structure and properties are discussed and compared with CauGaAsn and GaAs.

SrnGaAsn has been synthesized by reacting the stoichiometric combination of the elements in a sealed niobium tube, seeded in a quartz ampule under purified argon at 1200 °C for 24 hours. Single crystal X-ray diffraction data (130 K, a = 16.498(8) A, c = 22.132(12) A) were refined. The compound is isostructural to Cai4AlSbn (tetragonal, Z4i/acd (#142, origin choice 2), Z = 8, J?w = 4.4% for 770 independent reflections). The structure consists of discrete GaAs4 tetrahedra, As3 linear units and isolated As euiions and Sr cations. Optical absorption data is consistent with this new compound being a semiconductor with an optical band gap of approximately 1.44 eV, veiy similar to that of GaAs (1.42 eV). The structure and properties are discussed and compared with CauGaAsn and GaAs.