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In this paper we review recent progress achieved in our development of type-1 GaInAsSb/AlGaAsSb quantum-well (QW) lasers with emission wavelength in the 1.74 - 2.34 micrometers range. Triple-QW (3-QW) and single-QW (SQW) diode lasers having broadened waveguide design emitting around 2.26 micrometers have been studied in particular. Comparing the two designs we have find that the threshold current density at infinite cavity length as well as the transparency current density scale with the number of QWs. Maximum cw operating temperature exceeding 50 deg C and 90 deg C has been obtained for ridge waveguide lasers emitting above and below 2 micrometers, respectively. Ridge waveguide diode lasers emitting at 1.94 micrometers exhibited internal quantum efficiencies in excess of 77%, internal losses of 6/cm, and threshold current density at infinite cavity length as low as 121 A/sq cm reflecting the superior quality of our diode lasers, all values recorded at 280 K. A high characteristic temperature T(sub O) of 179 K for the threshold current along with a value of T1 = 433 K for the characteristic temperature of the external efficiency have been attained for the 250 - 280 K temperature interval. Room temperature cw output powers exceeding 1.7 W have been demonstrated for broad area single element devices with high-reflection/antireflection coated mirror facets, mounted epi-side down. The latter result is a proof for the high power capabilities of these GaSb-based mid-ir diode lasers., Pub in: Materials Research Society Symposium Proceedings, Volume 692. This article is from ADA405047 Progress in Semiconductor Materials for Optoelectronic Applications Symposium held in Boston, Massachusetts on November 26-29, 2001.