Search

With the use of a properly defined physical criterion for surface potential pinning, an approximate but explicit expression is derived for the linearly extrapolated threshold-voltage of fully depleted, symmetrical double-gate metal-oxide-semiconductor (DG MOS) capacitors with intrinsic or doped silicon bodies. Good agreement is obtained between the values of threshold-voltage calculated using this expression and those extracted from the numerically simulated current-voltage characteristics of DG MOS field-effect transistors. Instead of increasing monotonically with the gate oxide thickness, the linearly extrapolated threshold-voltage of a DG MOS device with a doped silicon body is found to exhibit a global minimum. The dependence of this minimum threshold-voltage on body doping concentration is evaluated. It is also verified using numerical simulation that even after considering quantum mechanical confinement and short-channel effects, the nonmonotonic dependence of the linearly extrapolated threshold-voltage on gated oxide thickness for a silicon body with finite doping is qualitatively maintained.

The application of silicon-on-insulator (SOI) substrates to high-power integrated circuits is hampered by self-heating effects due to the poor thermal conductivity of the buried SiO2 layer. We propose to replace the buried SiO2 layer in SOI with a plasma synthesized SiOxNy, thin film to mitigate the self-heating effects. The SiOxNy films synthesized on silicon by plasma immersion ion implantation (PHI) exhibit outstanding surface topography, and excellent insulating characteristics are maintained up to an annealing temperature of 1100 degrees C. Hence, the polycrystallization in our SiOxNy materials is insignificant during conventional complementary metal oxide silicon (CMOS) processing. Using Si/SiOxNy direct bonding and the hydrogen-induced layer transfer, a silicon-on-SiOxNy structure has been successfully fabricated. Cross-sectional high-resolution transmission electron microscopy (HRTEM) and spreading resistance profiling (SRP) reveal that the bonded interface is abrupt and the top Si layer exhibits nearly perfect single crystalline quality. The reaction mechanism of SiOxNy and Si wafer bonding are also discussed. (c) 2004 Elsevier B.V. All rights reserved.

SiNx:H films with different N/Si ratios were synthesized by plasma-enhanced chemical vapor deposition (PECVD), aimed for BioMEMS or other biomedical applications. In vitro platelet adhesion tests were conducted to evaluate the hemocompatibility of the prepared films and the results were compared to low-temperature isotropic carbon (LTI-C) which is the most commonly used materials in commercial blood contacting biomedical devices such as artificial heart valves. Our results indicate that the SiN,:H films offer acceptable hemocompatibility compared to LTI-C and possess better characteristics. The hydrophilic property in terms of surface free energy is considered to contribute to the platelet adhesion and activation behavior. The thrombogenicity of the materials is investigated from the thermodynamic and kinetic points of view. Our results indicate that the Si-N bonds play a crucial role in determining the hydrophilic property of the film and consequently affect the blood/surface reactions and hemocompatibility of the films. (c) 2005 Elsevier B.V. All rights reserved.

It is shown that the classical threshold criterion based on critical band-bending leads to an inaccurate estimation of the linearly extrapolated threshold voltage V-Te of metal-oxide-semiconductor (MOS) devices. With the use of a properly defined and physically accurate condition for effective surface potential pinning, an approximate but explicit expression is derived for V-Te. Good agreement is obtained between the values of V-Te calculated using this expression and those extracted from the numerically simulated current-voltage characteristics of long-channel MOS field-effect transistors. Instead of increasing monotonically with the gate dielectric thickness, V-Te of an MOS device with a finite substrate doping concentration is found to exhibit a global minimum. (c) 2005 Elsevier Ltd. All rights reserved.

With the use of a properly defined physical criterion for surface potential pinning, an approximate but explicit expression is derived for the linearly extrapolated threshold-voltage of fully depleted, symmetrical double-gate metal-oxide-semiconductor (DG MOS) capacitors with intrinsic or doped silicon bodies. Good agreement is obtained between the values of threshold-voltage calculated using this expression and those extracted from the numerically simulated current-voltage characteristics of DG MOS field-effect transistors. Instead of increasing monotonically with the gate oxide thickness, the linearly extrapolated threshold-voltage of a DG MOS device with a doped silicon body is found to exhibit a global minimum. The dependence of this minimum threshold-voltage on body doping concentration is evaluated. It is also verified using numerical simulation that even after considering quantum mechanical confinement and short-channel effects, the nonmonotonic dependence of the linearly extrapolated threshold-voltage on gated oxide thickness for a silicon body with finite doping is qualitatively maintained.

It is shown that the classical threshold criterion based on critical band-bending leads to an inaccurate estimation of the linearly extrapolated threshold voltage V-Te of metal-oxide-semiconductor (MOS) devices. With the use of a properly defined and physically accurate condition for effective surface potential pinning, an approximate but explicit expression is derived for V-Te. Good agreement is obtained between the values of V-Te calculated using this expression and those extracted from the numerically simulated current-voltage characteristics of long-channel MOS field-effect transistors. Instead of increasing monotonically with the gate dielectric thickness, V-Te of an MOS device with a finite substrate doping concentration is found to exhibit a global minimum. (c) 2005 Elsevier Ltd. All rights reserved.

The application of silicon-on-insulator (SOI) substrates to high-power integrated circuits is hampered by self-heating effects due to the poor thermal conductivity of the buried SiO2 layer. We propose to replace the buried SiO2 layer in SOI with a plasma synthesized SiOxNy, thin film to mitigate the self-heating effects. The SiOxNy films synthesized on silicon by plasma immersion ion implantation (PHI) exhibit outstanding surface topography, and excellent insulating characteristics are maintained up to an annealing temperature of 1100 degrees C. Hence, the polycrystallization in our SiOxNy materials is insignificant during conventional complementary metal oxide silicon (CMOS) processing. Using Si/SiOxNy direct bonding and the hydrogen-induced layer transfer, a silicon-on-SiOxNy structure has been successfully fabricated. Cross-sectional high-resolution transmission electron microscopy (HRTEM) and spreading resistance profiling (SRP) reveal that the bonded interface is abrupt and the top Si layer exhibits nearly perfect single crystalline quality. The reaction mechanism of SiOxNy and Si wafer bonding are also discussed. (c) 2004 Elsevier B.V. All rights reserved.

SiNx:H films with different N/Si ratios were synthesized by plasma-enhanced chemical vapor deposition (PECVD), aimed for BioMEMS or other biomedical applications. In vitro platelet adhesion tests were conducted to evaluate the hemocompatibility of the prepared films and the results were compared to low-temperature isotropic carbon (LTI-C) which is the most commonly used materials in commercial blood contacting biomedical devices such as artificial heart valves. Our results indicate that the SiN,:H films offer acceptable hemocompatibility compared to LTI-C and possess better characteristics. The hydrophilic property in terms of surface free energy is considered to contribute to the platelet adhesion and activation behavior. The thrombogenicity of the materials is investigated from the thermodynamic and kinetic points of view. Our results indicate that the Si-N bonds play a crucial role in determining the hydrophilic property of the film and consequently affect the blood/surface reactions and hemocompatibility of the films. (c) 2005 Elsevier B.V. All rights reserved.

SiNx:H films with different N/Si ratios were synthesized by plasma-enhanced chemical vapor deposition (PECVD), aimed for BioMEMS or other biomedical applications. In vitro platelet adhesion tests were conducted to evaluate the hemocompatibility of the prepared films and the results were compared to low-temperature isotropic carbon (LTI-C) which is the most commonly used materials in commercial blood contacting biomedical devices such as artificial heart valves. Our results indicate that the SiN,:H films offer acceptable hemocompatibility compared to LTI-C and possess better characteristics. The hydrophilic property in terms of surface free energy is considered to contribute to the platelet adhesion and activation behavior. The thrombogenicity of the materials is investigated from the thermodynamic and kinetic points of view. Our results indicate that the Si-N bonds play a crucial role in determining the hydrophilic property of the film and consequently affect the blood/surface reactions and hemocompatibility of the films. (c) 2005 Elsevier B.V. All rights reserved.

With the use of a properly defined physical criterion for surface potential pinning, an approximate but explicit expression is derived for the linearly extrapolated threshold-voltage of fully depleted, symmetrical double-gate metal-oxide-semiconductor (DG MOS) capacitors with intrinsic or doped silicon bodies. Good agreement is obtained between the values of threshold-voltage calculated using this expression and those extracted from the numerically simulated current-voltage characteristics of DG MOS field-effect transistors. Instead of increasing monotonically with the gate oxide thickness, the linearly extrapolated threshold-voltage of a DG MOS device with a doped silicon body is found to exhibit a global minimum. The dependence of this minimum threshold-voltage on body doping concentration is evaluated. It is also verified using numerical simulation that even after considering quantum mechanical confinement and short-channel effects, the nonmonotonic dependence of the linearly extrapolated threshold-voltage on gated oxide thickness for a silicon body with finite doping is qualitatively maintained.

It is shown that the classical threshold criterion based on critical band-bending leads to an inaccurate estimation of the linearly extrapolated threshold voltage V-Te of metal-oxide-semiconductor (MOS) devices. With the use of a properly defined and physically accurate condition for effective surface potential pinning, an approximate but explicit expression is derived for V-Te. Good agreement is obtained between the values of V-Te calculated using this expression and those extracted from the numerically simulated current-voltage characteristics of long-channel MOS field-effect transistors. Instead of increasing monotonically with the gate dielectric thickness, V-Te of an MOS device with a finite substrate doping concentration is found to exhibit a global minimum. (c) 2005 Elsevier Ltd. All rights reserved.

The application of silicon-on-insulator (SOI) substrates to high-power integrated circuits is hampered by self-heating effects due to the poor thermal conductivity of the buried SiO2 layer. We propose to replace the buried SiO2 layer in SOI with a plasma synthesized SiOxNy, thin film to mitigate the self-heating effects. The SiOxNy films synthesized on silicon by plasma immersion ion implantation (PHI) exhibit outstanding surface topography, and excellent insulating characteristics are maintained up to an annealing temperature of 1100 degrees C. Hence, the polycrystallization in our SiOxNy materials is insignificant during conventional complementary metal oxide silicon (CMOS) processing. Using Si/SiOxNy direct bonding and the hydrogen-induced layer transfer, a silicon-on-SiOxNy structure has been successfully fabricated. Cross-sectional high-resolution transmission electron microscopy (HRTEM) and spreading resistance profiling (SRP) reveal that the bonded interface is abrupt and the top Si layer exhibits nearly perfect single crystalline quality. The reaction mechanism of SiOxNy and Si wafer bonding are also discussed. (c) 2004 Elsevier B.V. All rights reserved.

An analytical expression explicitly relating the potential and the electric field at the oxide-semiconductor interface of a symmetrical double-gate oxide-intrinsic semiconductor-oxide system is derived. The expression is continuously applicable to all regimes of operation. The "turn-on" behavior of the system is studied and an "extrapolated" threshold volt-age is uniquely defined. Opposite to the behavior of a conventional bulk metal-oxide-semiconductor capacitor realized on a doped substrate, this threshold voltage is shown to decrease with increasing oxide thickness.

We propose to replace the buried SiO2 layer in silicon-on-insulator with a plasma synthesized diamond-like-carbon (DLC) thin film to mitigate the self-heating effects. The DLC films synthesized on silicon by a plasma immersion ion implantation & deposition process exhibit outstanding surface topography, and excellent insulating properties are maintained up to an annealing temperature of 900degreesC. Hence, the degree of graphitization in our DLC materials is insignificant during thin-film transistor processing and even in most annealing steps in conventional complementary metal oxide silicon processing. Using Si/DLC direct bonding and the hydrogen-induced layer transfer method, a silicon-on-diamond structure has been fabricated. Cross-sectional high-resolution transmission electron microscopy reveals that the bonded interface is abrupt and the top Si layer exhibits nearly perfect single crystalline quality. A model is postulated to describe the reactions occurring at the interface during the annealing steps in Si-DLC wafer bonding. (C) American Institute of Physics.

We propose to replace the buried SiO2 layer in silicon-on-insulator with a plasma synthesized diamond-like-carbon (DLC) thin film to mitigate the self-heating effects. The DLC films synthesized on silicon by a plasma immersion ion implantation & deposition process exhibit outstanding surface topography, and excellent insulating properties are maintained up to an annealing temperature of 900degreesC. Hence, the degree of graphitization in our DLC materials is insignificant during thin-film transistor processing and even in most annealing steps in conventional complementary metal oxide silicon processing. Using Si/DLC direct bonding and the hydrogen-induced layer transfer method, a silicon-on-diamond structure has been fabricated. Cross-sectional high-resolution transmission electron microscopy reveals that the bonded interface is abrupt and the top Si layer exhibits nearly perfect single crystalline quality. A model is postulated to describe the reactions occurring at the interface during the annealing steps in Si-DLC wafer bonding. (C) American Institute of Physics.

An analytical expression explicitly relating the potential and the electric field at the oxide-semiconductor interface of a symmetrical double-gate oxide-intrinsic semiconductor-oxide system is derived. The expression is continuously applicable to all regimes of operation. The "turn-on" behavior of the system is studied and an "extrapolated" threshold volt-age is uniquely defined. Opposite to the behavior of a conventional bulk metal-oxide-semiconductor capacitor realized on a doped substrate, this threshold voltage is shown to decrease with increasing oxide thickness.

We propose to replace the buried SiO2 layer in silicon-on-insulator with a plasma synthesized diamond-like-carbon (DLC) thin film to mitigate the self-heating effects. The DLC films synthesized on silicon by a plasma immersion ion implantation & deposition process exhibit outstanding surface topography, and excellent insulating properties are maintained up to an annealing temperature of 900degreesC. Hence, the degree of graphitization in our DLC materials is insignificant during thin-film transistor processing and even in most annealing steps in conventional complementary metal oxide silicon processing. Using Si/DLC direct bonding and the hydrogen-induced layer transfer method, a silicon-on-diamond structure has been fabricated. Cross-sectional high-resolution transmission electron microscopy reveals that the bonded interface is abrupt and the top Si layer exhibits nearly perfect single crystalline quality. A model is postulated to describe the reactions occurring at the interface during the annealing steps in Si-DLC wafer bonding. (C) American Institute of Physics.

Analytical solutions to the one-dimensional (1-D) double-side gated oxide-silicon-oxide (OSO) system are derived. The solution space, parameterized by the gate bias conditions, is divided into two separate regions, admitting either a "zero-field" or a "zero-potential" solution. The boundary between the two regions is defined by the "zero-potential and zero-field" solution. Some general implications of the solutions are discussed. The "saturation" values of the body potential for the "zero-field" solution and the body electric field for the "zero-potential" solution are derived. The formalism is also applied to determine a single-gate silicon-on-insulator equivalence of a double-gate metal-oxide-semiconductor capacitor.

Single-crystalline silicon thin film on glass (cSOG) has been prepared using an "ion-cutting" based "layer-transfer" technique. Low-temperature processed thin-film transistors, fabricated both on cSOG and metal-induced laterally crystallized polycrystalline silicon, have been characterized and compared. The cSOG-based transistors performed comparatively better, exhibiting a significantly higher electron field-effect, mobility (similar to430 cm(2)/Vs), a steeper subthreshold slope and a lower leakage current that was also relatively insensitive to gate bias.

Analytical solutions to the one-dimensional (1-D) double-side gated oxide-silicon-oxide (OSO) system are derived. The solution space, parameterized by the gate bias conditions, is divided into two separate regions, admitting either a "zero-field" or a "zero-potential" solution. The boundary between the two regions is defined by the "zero-potential and zero-field" solution. Some general implications of the solutions are discussed. The "saturation" values of the body potential for the "zero-field" solution and the body electric field for the "zero-potential" solution are derived. The formalism is also applied to determine a single-gate silicon-on-insulator equivalence of a double-gate metal-oxide-semiconductor capacitor.

Single-crystalline silicon thin film on glass (cSOG) has been prepared using an "ion-cutting" based "layer-transfer" technique. Low-temperature processed thin-film transistors, fabricated both on cSOG and metal-induced laterally crystallized polycrystalline silicon, have been characterized and compared. The cSOG-based transistors performed comparatively better, exhibiting a significantly higher electron field-effect, mobility (similar to430 cm(2)/Vs), a steeper subthreshold slope and a lower leakage current that was also relatively insensitive to gate bias.

Analytical solutions to the one-dimensional (1-D) double-side gated oxide-silicon-oxide (OSO) system are derived. The solution space, parameterized by the gate bias conditions, is divided into two separate regions, admitting either a "zero-field" or a "zero-potential" solution. The boundary between the two regions is defined by the "zero-potential and zero-field" solution. Some general implications of the solutions are discussed. The "saturation" values of the body potential for the "zero-field" solution and the body electric field for the "zero-potential" solution are derived. The formalism is also applied to determine a single-gate silicon-on-insulator equivalence of a double-gate metal-oxide-semiconductor capacitor.

Single-crystalline silicon thin film on glass (cSOG) has been prepared using an "ion-cutting" based "layer-transfer" technique. Low-temperature processed thin-film transistors, fabricated both on cSOG and metal-induced laterally crystallized polycrystalline silicon, have been characterized and compared. The cSOG-based transistors performed comparatively better, exhibiting a significantly higher electron field-effect, mobility (similar to430 cm(2)/Vs), a steeper subthreshold slope and a lower leakage current that was also relatively insensitive to gate bias.