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The structural, magnetic, magnetocaloric and Griffiths phase (GP) disorder of non-stoichiometric perovskite manganites La0.8-xSr0.2-yMn1+x+yO3 are reported here. Determination of valence states and structural phases evidenced that the smaller cations Mn2+ and Mn3+ will not occupy the A-site of a perovskite under atmospheric synthesis conditions. The same analysis also supports that the vacancy in the A-site of a perovskite induces a similar vacancy in the B-site. The La3+ and Sr2+ cation substitutions in the A-site with vacancy influences the magnetic phase transition temperature (TC) inversely, which is explained in terms of the electronic bandwidth change. An anomalous non-linear change of the GP has been observed in the Sr substituted compounds. The agglomeration of Mn3+-Mn4+ pairs (denoted as dimerons), into small ferromagnetic clusters, has been identified as the reason for the occurrence of the GP. A threshold limit of the dimeron formation explains the observed non-linear behaviour of the GP formation. The Sr-substituted compounds show a relatively large value of isothermal entropy change (maximum 3.27 J/kgK at mu H-0 = 2T) owing to its sharp magnetic transition, while the broad change of magnetization in the La-substituted compound enhances the relative cooling power (maximum 98 J/kg at mu H-0 = 2T).

The structural, magnetic, magnetocaloric and Griffiths phase (GP) disorder of non-stoichiometric perovskite manganites La0.8-xSr0.2-yMn1+x+yO3 are reported here. Determination of valence states and structural phases evidenced that the smaller cations Mn2+ and Mn3+ will not occupy the A-site of a perovskite under atmospheric synthesis conditions. The same analysis also supports that the vacancy in the A-site of a perovskite induces a similar vacancy in the B-site. The La3+ and Sr2+ cation substitutions in the A-site with vacancy influences the magnetic phase transition temperature (TC) inversely, which is explained in terms of the electronic bandwidth change. An anomalous non-linear change of the GP has been observed in the Sr substituted compounds. The agglomeration of Mn3+-Mn4+ pairs (denoted as dimerons), into small ferromagnetic clusters, has been identified as the reason for the occurrence of the GP. A threshold limit of the dimeron formation explains the observed non-linear behaviour of the GP formation. The Sr-substituted compounds show a relatively large value of isothermal entropy change (maximum 3.27 J/kgK at mu H-0 = 2T) owing to its sharp magnetic transition, while the broad change of magnetization in the La-substituted compound enhances the relative cooling power (maximum 98 J/kg at mu H-0 = 2T).

The structural, magnetic, magnetocaloric and Griffiths phase (GP) disorder of non-stoichiometric perovskite manganites La0.8-xSr0.2-yMn1+x+yO3 are reported here. Determination of valence states and structural phases evidenced that the smaller cations Mn2+ and Mn3+ will not occupy the A-site of a perovskite under atmospheric synthesis conditions. The same analysis also supports that the vacancy in the A-site of a perovskite induces a similar vacancy in the B-site. The La3+ and Sr2+ cation substitutions in the A-site with vacancy influences the magnetic phase transition temperature (TC) inversely, which is explained in terms of the electronic bandwidth change. An anomalous non-linear change of the GP has been observed in the Sr substituted compounds. The agglomeration of Mn3+-Mn4+ pairs (denoted as dimerons), into small ferromagnetic clusters, has been identified as the reason for the occurrence of the GP. A threshold limit of the dimeron formation explains the observed non-linear behaviour of the GP formation. The Sr-substituted compounds show a relatively large value of isothermal entropy change (maximum 3.27 J/kgK at mu H-0 = 2T) owing to its sharp magnetic transition, while the broad change of magnetization in the La-substituted compound enhances the relative cooling power (maximum 98 J/kg at mu H-0 = 2T).

The structural, magnetic, magnetocaloric and Griffiths phase (GP) disorder of non-stoichiometric perovskite manganites La0.8-xSr0.2-yMn1+x+yO3 are reported here. Determination of valence states and structural phases evidenced that the smaller cations Mn2+ and Mn3+ will not occupy the A-site of a perovskite under atmospheric synthesis conditions. The same analysis also supports that the vacancy in the A-site of a perovskite induces a similar vacancy in the B-site. The La3+ and Sr2+ cation substitutions in the A-site with vacancy influences the magnetic phase transition temperature (TC) inversely, which is explained in terms of the electronic bandwidth change. An anomalous non-linear change of the GP has been observed in the Sr substituted compounds. The agglomeration of Mn3+-Mn4+ pairs (denoted as dimerons), into small ferromagnetic clusters, has been identified as the reason for the occurrence of the GP. A threshold limit of the dimeron formation explains the observed non-linear behaviour of the GP formation. The Sr-substituted compounds show a relatively large value of isothermal entropy change (maximum 3.27 J/kgK at mu H-0 = 2T) owing to its sharp magnetic transition, while the broad change of magnetization in the La-substituted compound enhances the relative cooling power (maximum 98 J/kg at mu H-0 = 2T).

The structural, magnetic, magnetocaloric and Griffiths phase (GP) disorder of non-stoichiometric perovskite manganites La0.8-xSr0.2-yMn1+x+yO3 are reported here. Determination of valence states and structural phases evidenced that the smaller cations Mn2+ and Mn3+ will not occupy the A-site of a perovskite under atmospheric synthesis conditions. The same analysis also supports that the vacancy in the A-site of a perovskite induces a similar vacancy in the B-site. The La3+ and Sr2+ cation substitutions in the A-site with vacancy influences the magnetic phase transition temperature (TC) inversely, which is explained in terms of the electronic bandwidth change. An anomalous non-linear change of the GP has been observed in the Sr substituted compounds. The agglomeration of Mn3+-Mn4+ pairs (denoted as dimerons), into small ferromagnetic clusters, has been identified as the reason for the occurrence of the GP. A threshold limit of the dimeron formation explains the observed non-linear behaviour of the GP formation. The Sr-substituted compounds show a relatively large value of isothermal entropy change (maximum 3.27 J/kgK at mu H-0 = 2T) owing to its sharp magnetic transition, while the broad change of magnetization in the La-substituted compound enhances the relative cooling power (maximum 98 J/kg at mu H-0 = 2T).

Determining the sequence of inks in a questioned document is important in forensic science. Conventional and micro beam-based ion beam analysis using Rutherford backscattering spectrometry (RBS) and particle-induced X-ray emission were employed to study the depth distribution of chemical elements in plain paper and inks/toner deposited by different pens as well as inkjet and laser printers. Composition depth profiling with high lateral resolution was performed with focus on areas where two different coloring agents overlapped. We identify under which conditions the sequence of inks deposited can be reconstructed, analyzing the continuity of characteristic contributions to the obtained signals, with a focus on the depth-resolved RBS data. The order of deposition was correctly determined for combinations of two different laser printers and in certain cases for pens. Results indicate a potential for analysis, depending on the composition of staining agent, that is, in particular if heavy species are present in sufficiently high concentration. In such cases, also characters obscured or modified by an agent of different composition can be revealed. Changing the probing depth by modifying the beam energy could yield additional information.

Determining the sequence of inks in a questioned document is important in forensic science. Conventional and micro beam-based ion beam analysis using Rutherford backscattering spectrometry (RBS) and particle-induced X-ray emission were employed to study the depth distribution of chemical elements in plain paper and inks/toner deposited by different pens as well as inkjet and laser printers. Composition depth profiling with high lateral resolution was performed with focus on areas where two different coloring agents overlapped. We identify under which conditions the sequence of inks deposited can be reconstructed, analyzing the continuity of characteristic contributions to the obtained signals, with a focus on the depth-resolved RBS data. The order of deposition was correctly determined for combinations of two different laser printers and in certain cases for pens. Results indicate a potential for analysis, depending on the composition of staining agent, that is, in particular if heavy species are present in sufficiently high concentration. In such cases, also characters obscured or modified by an agent of different composition can be revealed. Changing the probing depth by modifying the beam energy could yield additional information.

Determining the sequence of inks in a questioned document is important in forensic science. Conventional and micro beam-based ion beam analysis using Rutherford backscattering spectrometry (RBS) and particle-induced X-ray emission were employed to study the depth distribution of chemical elements in plain paper and inks/toner deposited by different pens as well as inkjet and laser printers. Composition depth profiling with high lateral resolution was performed with focus on areas where two different coloring agents overlapped. We identify under which conditions the sequence of inks deposited can be reconstructed, analyzing the continuity of characteristic contributions to the obtained signals, with a focus on the depth-resolved RBS data. The order of deposition was correctly determined for combinations of two different laser printers and in certain cases for pens. Results indicate a potential for analysis, depending on the composition of staining agent, that is, in particular if heavy species are present in sufficiently high concentration. In such cases, also characters obscured or modified by an agent of different composition can be revealed. Changing the probing depth by modifying the beam energy could yield additional information.

Determining the sequence of inks in a questioned document is important in forensic science. Conventional and micro beam-based ion beam analysis using Rutherford backscattering spectrometry (RBS) and particle-induced X-ray emission were employed to study the depth distribution of chemical elements in plain paper and inks/toner deposited by different pens as well as inkjet and laser printers. Composition depth profiling with high lateral resolution was performed with focus on areas where two different coloring agents overlapped. We identify under which conditions the sequence of inks deposited can be reconstructed, analyzing the continuity of characteristic contributions to the obtained signals, with a focus on the depth-resolved RBS data. The order of deposition was correctly determined for combinations of two different laser printers and in certain cases for pens. Results indicate a potential for analysis, depending on the composition of staining agent, that is, in particular if heavy species are present in sufficiently high concentration. In such cases, also characters obscured or modified by an agent of different composition can be revealed. Changing the probing depth by modifying the beam energy could yield additional information.

Determining the sequence of inks in a questioned document is important in forensic science. Conventional and micro beam-based ion beam analysis using Rutherford backscattering spectrometry (RBS) and particle-induced X-ray emission were employed to study the depth distribution of chemical elements in plain paper and inks/toner deposited by different pens as well as inkjet and laser printers. Composition depth profiling with high lateral resolution was performed with focus on areas where two different coloring agents overlapped. We identify under which conditions the sequence of inks deposited can be reconstructed, analyzing the continuity of characteristic contributions to the obtained signals, with a focus on the depth-resolved RBS data. The order of deposition was correctly determined for combinations of two different laser printers and in certain cases for pens. Results indicate a potential for analysis, depending on the composition of staining agent, that is, in particular if heavy species are present in sufficiently high concentration. In such cases, also characters obscured or modified by an agent of different composition can be revealed. Changing the probing depth by modifying the beam energy could yield additional information.

A novel Rutherford backscattering spectrometry (RBS) method is presented to investigate the interface between a solid surface and a surrounding liquid. The introduced measurement system allows to observe and quantify adsorption at the solid–liquid interface and the formation of the electrochemical double layer (EDL). BaCl2 as a bicomponent electrolyte and a Si3N4 membrane surface are chosen as a model system to prove the capabilities of the setup. The results of these RBS measurements are combined with electrochemical impedance spectroscopy (EIS) to validate the findings for the solid–liquid interface under study. Complementary results and discrepancies regarding the formation of the EDL are discussed. Author keywords: electrochemical double layer, electrochemical impedance spectroscopy, Rutherford backscattering spectroscopy, silicon nitride

The recently discovered phenomenon of Néel spin-orbit torque in antiferromagnetic Mn2Au [Bodnar et al., Nat. Commun. 9, 348 (2018); Meinert et al., Phys. Rev. Appl. 9, 064040 (2018); Bodnar et al., Phys. Rev. B 99, 140409(R) (2019)] has generated huge interest in this material for spintronics applications. In this paper, we report the preparation and characterization of high quality Mn2Au thin films by molecular beam epitaxy and compare them with magnetron sputtered samples. The films were characterized for their structural and morphological properties using reflective high-energy electron diffraction, x-ray diffraction, x-ray reflectometry, atomic force microscopy, and temperature dependent resistance measurements. The thin film composition was determined using both inductively coupled plasma optical emission spectroscopy and Rutherford backscattering spectrometry techniques. The MBE-grown films were found to show a superior smooth morphology and a low defect concentration, resulting in reduced scattering of the charge carriers.

Metal-induced crystallisation with layer exchange is applied on Ni/C bilayer stacks deposited by three PVD techniques on SiO2. The layer stacks were deposited at room temperature by either ion beam sputtering, direct current magnetron sputtering or high-power impulse magnetron sputtering. The influence of the Ni morphology on the layer exchange degree aLE and the resulting graphitic ordering is studied by atomic force microscopy, Rutherford backscattering spectrometry and Raman spectroscopy. The initial RMS roughness of the Ni top layer varied with the deposition technique by a factor of 20, from 0.3 to 6.1 nm. After annealing in UHV at up to 700°C, layer exchange was observed for all samples. Still, the layer exchange degree was affected by the roughness of the initial bilayer stack. The highest value of 96% was achieved for magnetron-sputtered samples, what is by ~35% higher than for the initially roughest Ni surfaces. Raman spectroscopy showed the formation of graphitic carbon, characterised by a strong 2D line, for all three bilayer stacks. The degree of graphitic ordering increased with decreasing Ni surface roughness.

Silicon hyperdoped with chalcogens beyond the equilibrium solubility limit exhibits sub-band gap optical absorption, presenting a potential material for silicon-based optoelectronic applications [1-3]. In our work, tellurium hyperdoped silicon was obtained by ion implantation combined with pulsed laser melting. The crystallization of implanted layers and the lattice location of impurities in silicon matrix were determined by the Rutherford backscattering spectrometry / channeling (RBS/C). The chemical states of tellurium dopants in tellurium-hyperdoped silicon were probed by the tellurium K-edge X-ray absorption fine structure spectroscopy. The electrical transport reveals the insulator-to-metal transition (IMT) in tellurium-hyperdoped silicon, which is confirmed and understood by using calculations based on the density functional theory. However, the critical tellurium concentration for IMT is much higher than the calculated value. The lattice location results suggest that a significant fraction of the tellurium atoms form dimers, which are electrically deactivated. After considering this fraction, the critical concentration claimed from the DFT calculation is consistent with the number of electrically activated tellurium atoms. [1] T. G. Kim, J.M. Warrender, M. J. Aziz, Applied Physics Letters 88(24), 2006, 1850. [2] M. Tabbal, T. G. Kim, D. N. Woolf, et al. Applied Physics A 98(3), 2010, 589-594. [3] Y. Berencén, S. Prucnal, L. Fang, et al. Scientific Reports 7, 2017, 43688.

Silicon hyperdoped with chalcogens beyond the equilibrium solubility limit exhibits sub-band gap optical absorption, presenting a potential material for silicon-based optoelectronic applications [1-3]. In our work, tellurium hyperdoped silicon was obtained by ion implantation combined with pulsed laser melting. The crystallization of implanted layers and the lattice location of impurities in silicon matrix were determined by the Rutherford backscattering spectrometry / channeling (RBS/C). The chemical states of tellurium dopants in tellurium-hyperdoped silicon were probed by the tellurium K-edge X-ray absorption fine structure spectroscopy. The electrical transport reveals the insulator-to-metal transition (IMT) in tellurium-hyperdoped silicon, which is confirmed and understood by using calculations based on the density functional theory. However, the critical tellurium concentration for IMT is much higher than the calculated value. The lattice location results suggest that a significant fraction of the tellurium atoms form dimers, which are electrically deactivated. After considering this fraction, the critical concentration claimed from the DFT calculation is consistent with the number of electrically activated tellurium atoms. [1] T. G. Kim, J.M. Warrender, M. J. Aziz, Applied Physics Letters 88(24), 2006, 1850. [2] M. Tabbal, T. G. Kim, D. N. Woolf, et al. Applied Physics A 98(3), 2010, 589-594. [3] Y. Berencén, S. Prucnal, L. Fang, et al. Scientific Reports 7, 2017, 43688.

Zirconium-oxide based metal-organic frameworks (MOFs) were grown on p-type Si wafers. A modified linker molecule containing iodine was introduced by post synthetic exchange (PSE). Samples have been studied using Rutherford Backscattering Spectrometry (RBS) and Particle Induced X-ray Emission (PIXE) techniques, employing the 5 MV 15SDH-2 Pelletron Tandem accelerator at the Angstrom laboratory. The degree of post synthetic uptake of the iodine-containing linker has been investigated with both a broad beam and a focused beam of carbon and alpha particles targeting different kind of MOF crystals which were of similar to 1-10 mu m in size, depending on the linker used. Iodine concentrations in MOF crystallites were also measured by Nuclear Magnetic Resonance Spectroscopy (NMR) and are compared to the RBS results. In parallel to the ion beam studies, samples were investigated by Scanning Electron Microscopy (SEM) to quantify possible crystallite clustering, develop optimum sample preparation routines and to characterize the potential ion beam induced sample damage and its dependence on different parameters. Based on these results the reliability and accuracy of ion beam data is assessed.

Zirconium-oxide based metal-organic frameworks (MOFs) were grown on p-type Si wafers. A modified linker molecule containing iodine was introduced by post synthetic exchange (PSE). Samples have been studied using Rutherford Backscattering Spectrometry (RBS) and Particle Induced X-ray Emission (PIXE) techniques, employing the 5 MV 15SDH-2 Pelletron Tandem accelerator at the Angstrom laboratory. The degree of post synthetic uptake of the iodine-containing linker has been investigated with both a broad beam and a focused beam of carbon and alpha particles targeting different kind of MOF crystals which were of similar to 1-10 mu m in size, depending on the linker used. Iodine concentrations in MOF crystallites were also measured by Nuclear Magnetic Resonance Spectroscopy (NMR) and are compared to the RBS results. In parallel to the ion beam studies, samples were investigated by Scanning Electron Microscopy (SEM) to quantify possible crystallite clustering, develop optimum sample preparation routines and to characterize the potential ion beam induced sample damage and its dependence on different parameters. Based on these results the reliability and accuracy of ion beam data is assessed., QC 20170801

Successive crystallization ofamorphous Cr-Zr-O thin films, formation of the (Cr,Zr)2O3/(Zr,Cr)O2 nanocomposites and the thermally induced changes in the hexagonal crystal structure of metastable (Cr,Zr)2O3 were investigated by means of in situ high-temperature synchrotron diffraction experiments up to 1100 °C. The thin films were deposited at room temperature by using reactive ion beam sputtering, and contained 3–15 at.% Zr. At low Zr concentrations, chromium-rich (Cr,Zr)2O3 crystallized first, while the crystallization of zirconium-rich (Zr,Cr)O2 was retarded. Increasing amount of zirconium shifted the onset of crystallization in both phases to higher temperatures. For 3 at.% of zirconium in amorphous Cr-Zr-O, (Cr,Zr)2O3 crystallized at 600 °C. At 8 at.% Zr in the films, the crystallization of (Cr,Zr)2O3 started at 700 °C. At 15 at.% Zr, the Cr-Zr-O films remained amorphous up to the annealing temperature of 1000 °C.Metastable hexagonal (Cr,Zr)2O3 accommodated up to ~3 at.% Zr. Excess of zirconium formed tetragonal zirconia, which was stabilized by chromium.

Successive crystallization ofamorphous Cr-Zr-O thin films, formation of the (Cr,Zr)2O3/(Zr,Cr)O2 nanocomposites and the thermally induced changes in the hexagonal crystal structure of metastable (Cr,Zr)2O3 were investigated by means of in situ high-temperature synchrotron diffraction experiments up to 1100 °C. The thin films were deposited at room temperature by using reactive ion beam sputtering, and contained 3–15 at.% Zr. At low Zr concentrations, chromium-rich (Cr,Zr)2O3 crystallized first, while the crystallization of zirconium-rich (Zr,Cr)O2 was retarded. Increasing amount of zirconium shifted the onset of crystallization in both phases to higher temperatures. For 3 at.% of zirconium in amorphous Cr-Zr-O, (Cr,Zr)2O3 crystallized at 600 °C. At 8 at.% Zr in the films, the crystallization of (Cr,Zr)2O3 started at 700 °C. At 15 at.% Zr, the Cr-Zr-O films remained amorphous up to the annealing temperature of 1000 °C.Metastable hexagonal (Cr,Zr)2O3 accommodated up to ~3 at.% Zr. Excess of zirconium formed tetragonal zirconia, which was stabilized by chromium.

Reverse osmosis (RO) membrane exposure to bisulphite, chlorite, bromide and iron(III) was assessed in terms of membrane composition, structure and performance. Membrane composition was determined by Rutherford backscattering spectrometry (RBS) and membrane performance was assessed by water and chloride permeation, using a modified version of the solution-diffusion model. Iron(III) dosage in presence of bisulphite led to an autooxidation of the latter, probably generating free radicals which damaged the membrane. It comprised a significant raise in chloride passage (chloride permeation coefficient increased 5.3–5.1 fold compared to the virgin membrane under the conditions studied) rapidly. No major differences in terms of water permeability and membrane composition were observed. Nevertheless, an increase in the size of the network pores, and a raise in the fraction of aggregate pores of the polyamide (PA) layer were identified, but no amide bond cleavage was observed. These structural changes were therefore, in accordance with the transport properties observed., Peer Reviewed, Postprint (author's final draft)

The influence of deposition and post-deposition annealing parameters on the structure and optical properties of TiO2 thin films synthesized by reactive e-beam evaporation is reported. Pure Ti (99.9%) was evaporated in oxygen atmosphere to form thin films on Si (100) and glass substrates. Depositions were conducted on substrates held at room temperature and at 200-400 degrees C heated substrates. Post-deposition annealing was done for 3 h at 500 degrees C in air. Compositional and structural studies were performed by Rutherford backscattering spectrometry, X-ray diffraction, and X-ray photoelectron spectroscopy, and optical properties were studied by ultraviolet-visible spectroscopy and analytically by pointwise unconstrained minimization approach method. It was found that both the structure and optical properties of the films are strongly influenced by the deposition and processing parameters. All deposited samples showed good stoichiometry of Ti:O similar to 1:2. Depending on the substrate temperature and oxygen pressure in the chamber during the deposition, anatase-rutile mixed films were obtained, and in some cases TiO and Ti2O3 phases were observed. Substrate deposition temperature appears to play the major role on the final structure of the films, while post-deposition annealing adds up for the lack of oxygen in some cases and invokes crystal grain growth of already initiated phases. The results can be interesting towards the development of TiO2 thin films with defined structure and optical properties. (C) 2015 Elsevier B.V. All rights reserved.

The influence of deposition and post-deposition annealing parameters on the structure and optical properties of TiO2 thin films synthesized by reactive e-beam evaporation is reported. Pure Ti (99.9%) was evaporated in oxygen atmosphere to form thin films on Si (100) and glass substrates. Depositions were conducted on substrates held at room temperature and at 200-400 degrees C heated substrates. Post-deposition annealing was done for 3 h at 500 degrees C in air. Compositional and structural studies were performed by Rutherford backscattering spectrometry, X-ray diffraction, and X-ray photoelectron spectroscopy, and optical properties were studied by ultraviolet-visible spectroscopy and analytically by pointwise unconstrained minimization approach method. It was found that both the structure and optical properties of the films are strongly influenced by the deposition and processing parameters. All deposited samples showed good stoichiometry of Ti:O similar to 1:2. Depending on the substrate temperature and oxygen pressure in the chamber during the deposition, anatase-rutile mixed films were obtained, and in some cases TiO and Ti2O3 phases were observed. Substrate deposition temperature appears to play the major role on the final structure of the films, while post-deposition annealing adds up for the lack of oxygen in some cases and invokes crystal grain growth of already initiated phases. The results can be interesting towards the development of TiO2 thin films with defined structure and optical properties. (C) 2015 Elsevier B.V. All rights reserved.

The primary objective is to develop a fabrication method of ZnO based on magnetron sputtering, impurity-mediated crystallization (IMC) , where crystal nucleation and the growth are controlled by adsorbed impurities on the growth surface. By utilizing ZnO films prepared by IMC method as buffer layers (IMC buffer layers), two kinds of high-quality ZnO based semiconductors have been fabricated, the properties of which are superior to those of conventional ZnO films fabricated without IMC buffer layers.

By combining transmission electron microscopy and Rutherford backscattering spectrometry, we have identified carbon related suppression of dislocations and tin precipitation in supersaturated molecular-beam epitaxial grown SiSn alloy layers. Secondary ion mass spectrometry has exposed the accumulation of carbon in the SiSn layers after high temperature carbon implantation and high temperature thermal treatment. Strain-enhanced separation of point defects and formation of dopant-defect complexes are suggested to be responsible for the effects. The possibility for carbon assisted segregation-free high temperature growth of heteroepitaxial SiSn/Si and GeSn/Si structures is argued.

Single-phase rock-salt Mg0.3Zn0.7O film was fabricated on MgO (100) substrate by radio-frequency plasma assisted molecular beam epitaxy. A smooth surface was observed by in-situ reflection high-energy electron diffraction and ex-situ atomic force microscopy. X-ray diffraction characterization demonstrated a high-quality single-phase structure with highly (200) orientation and cube-on-cube epitaxial relationship. Zn fraction in the single-phase rock-salt Mg0.3Zn0.7O film was determined by Rutherford backscattering spectrometry. Optical property of the film was investigated by reflectance spectroscopy, which indicated a solar-blind band gap of 255.5 nm. The reason why Zn solubility limit is greatly enhanced in non-polar (100) film compared with (111) polar epilayer is tentatively discussed in this work, suggesting MgO (100) is more suitable for the synthesis of single-phase rock-salt MgZnO with high Zn content towards solar-blind opto-device applications., QC 20120417

The ever-shrinking MOSFET (metal–oxide–semiconductor field-effect transistor) requires new materials that exhibit a higher dielectric constant compared to SiO2, for the gate dielectric [1]. Currently underway is the search for second-generation high-k materials [2] with higher permittivity, superior thermodynamic stability in contact with Si [3], matching band alignment with Si [4] and processing compatibility with poly-Si and metal gate electrodes. A suitable candidate material is lanthanum lutetium oxide (LaLuO3, LLO). During the so-called “gate first” manufacturing process, the gate oxide stack is subjected to thermal treatment. It is, therefore, important, to investigate the thermal stability of the deposited layer stack. The samples under investigation are stacks of Si/LaLuO3/Si made by FZ Jülich, before and after annealing at 900°C. The samples have been studied with standard RBS (Rutherford Backscattering Spectrometry), high-resolution RBS and high-resolution TEM (Transmission Electron Microscopy). Standard RBS measurements have been performed under a scattering angle of 170° and two different angles of incidence to the surface normal (0° and 70°), where the first provides good separation of La and Lu in the spectrum and the latter higher depth resolution. These two measurements give the total amount of La, Lu and O and to a minor degree the depth profile of these elements. However, the results indicate some mixing of Si into the LLO, but the depth resolution was insufficient to obtain unambiguous results. High-resolution TEM could not provide a definitive answer either. Therefore, high-resolution RBS has been employed to investigate this question. The high-resolution RBS set-up [5] consists of a Browne-Buechner type magnetic spectrometer and a position sensitive detector coupled to a 3 MV Tandetron accelerator. A 2.024 MeV C2+ ion beam has been used. The spectrometer is located at a forward scattering angle of 35° to maximise the depth resolution and scatter

The ever-shrinking MOSFET (metal–oxide–semiconductor field-effect transistor) requires new materials that exhibit a higher dielectric constant compared to SiO2, for the gate dielectric [1]. Currently underway is the search for second-generation high-k materials [2] with higher permittivity, superior thermodynamic stability in contact with Si [3], matching band alignment with Si [4] and processing compatibility with poly-Si and metal gate electrodes. A suitable candidate material is lanthanum lutetium oxide (LaLuO3, LLO). During the so-called “gate first” manufacturing process, the gate oxide stack is subjected to thermal treatment. It is, therefore, important, to investigate the thermal stability of the deposited layer stack. The samples under investigation are stacks of Si/LaLuO3/Si made by FZ Jülich, before and after annealing at 900°C. The samples have been studied with standard RBS (Rutherford Backscattering Spectrometry), high-resolution RBS and high-resolution TEM (Transmission Electron Microscopy). Standard RBS measurements have been performed under a scattering angle of 170° and two different angles of incidence to the surface normal (0° and 70°), where the first provides good separation of La and Lu in the spectrum and the latter higher depth resolution. These two measurements give the total amount of La, Lu and O and to a minor degree the depth profile of these elements. However, the results indicate some mixing of Si into the LLO, but the depth resolution was insufficient to obtain unambiguous results. High-resolution TEM could not provide a definitive answer either. Therefore, high-resolution RBS has been employed to investigate this question. The high-resolution RBS set-up [5] consists of a Browne-Buechner type magnetic spectrometer and a position sensitive detector coupled to a 3 MV Tandetron accelerator. A 2.024 MeV C2+ ion beam has been used. The spectrometer is located at a forward scattering angle of 35° to maximise the depth resolution and scatter

The scope of this thesis is the study of the interplay between structure and magnetism in amorphous materials. The investigations focus on the growth of amorphous layers and the study of the influence of structural disorder and reduced physical extension on the magnetic properties of thin films and multilayers. The examined magnetic materials are FeZr alloys, as well as other amorphous transition metal alloys such as CoZr and FeCoZr. Thin films and multilayers of the studied materials were deposited using magnetron sputtering in ultra-high vacuum conditions. Their amorphous structure and layering quality was investigated using X-ray scattering techniques and in several cases with transmission electron microscopy. The chemical composition of the alloys was determined with Rutherford Backscattering Spectrometry. The magnetic properties were investigated using the magneto-optic Kerr effect and SQUID magnetometry, as well as polarized neutron reflectometry and X-ray magnetic circular dicroism measurements. For FeZr alloys deposited as multilayers with Al2O3 as spacer layer, it was found that Fe-rich nanocrystallites, formed at the metal/oxide interfaces, exert large influence on the magnetic properties. The use of AlZr alloys as buffer layers promotes the growth of highly amorphous FeZr layers. FeZr/AlZr multilayers with good layering quality can also be obtained. The influence of the reduced layer thickness on the magnetic moment, Curie temperature and magnetic dimensionality of the magnetic layers is addressed for FeZr/AlZr multilayers. Thin FeZr layers in these structures are found to belong to the 2D XY dimensionality class. The change of the magnetic moment and Curie temperature with reduced FeZr layer thickness is quantified. In addition, the induced magnetic moment in the alloy element Zr was investigated in FeZr and CoZr alloy films. The possibility to imprint a preferred magnetization direction during thin film preparation was demonstrated for FeCoZr layers. Lastly, AlZ

The scope of this thesis is the study of the interplay between structure and magnetism in amorphous materials. The investigations focus on the growth of amorphous layers and the study of the influence of structural disorder and reduced physical extension on the magnetic properties of thin films and multilayers. The examined magnetic materials are FeZr alloys, as well as other amorphous transition metal alloys such as CoZr and FeCoZr. Thin films and multilayers of the studied materials were deposited using magnetron sputtering in ultra-high vacuum conditions. Their amorphous structure and layering quality was investigated using X-ray scattering techniques and in several cases with transmission electron microscopy. The chemical composition of the alloys was determined with Rutherford Backscattering Spectrometry. The magnetic properties were investigated using the magneto-optic Kerr effect and SQUID magnetometry, as well as polarized neutron reflectometry and X-ray magnetic circular dicroism measurements. For FeZr alloys deposited as multilayers with Al2O3 as spacer layer, it was found that Fe-rich nanocrystallites, formed at the metal/oxide interfaces, exert large influence on the magnetic properties. The use of AlZr alloys as buffer layers promotes the growth of highly amorphous FeZr layers. FeZr/AlZr multilayers with good layering quality can also be obtained. The influence of the reduced layer thickness on the magnetic moment, Curie temperature and magnetic dimensionality of the magnetic layers is addressed for FeZr/AlZr multilayers. Thin FeZr layers in these structures are found to belong to the 2D XY dimensionality class. The change of the magnetic moment and Curie temperature with reduced FeZr layer thickness is quantified. In addition, the induced magnetic moment in the alloy element Zr was investigated in FeZr and CoZr alloy films. The possibility to imprint a preferred magnetization direction during thin film preparation was demonstrated for FeCoZr layers. Lastly, AlZ

The scope of this thesis is the study of the interplay between structure and magnetism in amorphous materials. The investigations focus on the growth of amorphous layers and the study of the influence of structural disorder and reduced physical extension on the magnetic properties of thin films and multilayers. The examined magnetic materials are FeZr alloys, as well as other amorphous transition metal alloys such as CoZr and FeCoZr. Thin films and multilayers of the studied materials were deposited using magnetron sputtering in ultra-high vacuum conditions. Their amorphous structure and layering quality was investigated using X-ray scattering techniques and in several cases with transmission electron microscopy. The chemical composition of the alloys was determined with Rutherford Backscattering Spectrometry. The magnetic properties were investigated using the magneto-optic Kerr effect and SQUID magnetometry, as well as polarized neutron reflectometry and X-ray magnetic circular dicroism measurements. For FeZr alloys deposited as multilayers with Al2O3 as spacer layer, it was found that Fe-rich nanocrystallites, formed at the metal/oxide interfaces, exert large influence on the magnetic properties. The use of AlZr alloys as buffer layers promotes the growth of highly amorphous FeZr layers. FeZr/AlZr multilayers with good layering quality can also be obtained. The influence of the reduced layer thickness on the magnetic moment, Curie temperature and magnetic dimensionality of the magnetic layers is addressed for FeZr/AlZr multilayers. Thin FeZr layers in these structures are found to belong to the 2D XY dimensionality class. The change of the magnetic moment and Curie temperature with reduced FeZr layer thickness is quantified. In addition, the induced magnetic moment in the alloy element Zr was investigated in FeZr and CoZr alloy films. The possibility to imprint a preferred magnetization direction during thin film preparation was demonstrated for FeCoZr layers. Lastly, AlZ

The scope of this thesis is the study of the interplay between structure and magnetism in amorphous materials. The investigations focus on the growth of amorphous layers and the study of the influence of structural disorder and reduced physical extension on the magnetic properties of thin films and multilayers. The examined magnetic materials are FeZr alloys, as well as other amorphous transition metal alloys such as CoZr and FeCoZr. Thin films and multilayers of the studied materials were deposited using magnetron sputtering in ultra-high vacuum conditions. Their amorphous structure and layering quality was investigated using X-ray scattering techniques and in several cases with transmission electron microscopy. The chemical composition of the alloys was determined with Rutherford Backscattering Spectrometry. The magnetic properties were investigated using the magneto-optic Kerr effect and SQUID magnetometry, as well as polarized neutron reflectometry and X-ray magnetic circular dicroism measurements. For FeZr alloys deposited as multilayers with Al2O3 as spacer layer, it was found that Fe-rich nanocrystallites, formed at the metal/oxide interfaces, exert large influence on the magnetic properties. The use of AlZr alloys as buffer layers promotes the growth of highly amorphous FeZr layers. FeZr/AlZr multilayers with good layering quality can also be obtained. The influence of the reduced layer thickness on the magnetic moment, Curie temperature and magnetic dimensionality of the magnetic layers is addressed for FeZr/AlZr multilayers. Thin FeZr layers in these structures are found to belong to the 2D XY dimensionality class. The change of the magnetic moment and Curie temperature with reduced FeZr layer thickness is quantified. In addition, the induced magnetic moment in the alloy element Zr was investigated in FeZr and CoZr alloy films. The possibility to imprint a preferred magnetization direction during thin film preparation was demonstrated for FeCoZr layers. Lastly, AlZ

The scope of this thesis is the study of the interplay between structure and magnetism in amorphous materials. The investigations focus on the growth of amorphous layers and the study of the influence of structural disorder and reduced physical extension on the magnetic properties of thin films and multilayers. The examined magnetic materials are FeZr alloys, as well as other amorphous transition metal alloys such as CoZr and FeCoZr. Thin films and multilayers of the studied materials were deposited using magnetron sputtering in ultra-high vacuum conditions. Their amorphous structure and layering quality was investigated using X-ray scattering techniques and in several cases with transmission electron microscopy. The chemical composition of the alloys was determined with Rutherford Backscattering Spectrometry. The magnetic properties were investigated using the magneto-optic Kerr effect and SQUID magnetometry, as well as polarized neutron reflectometry and X-ray magnetic circular dicroism measurements. For FeZr alloys deposited as multilayers with Al2O3 as spacer layer, it was found that Fe-rich nanocrystallites, formed at the metal/oxide interfaces, exert large influence on the magnetic properties. The use of AlZr alloys as buffer layers promotes the growth of highly amorphous FeZr layers. FeZr/AlZr multilayers with good layering quality can also be obtained. The influence of the reduced layer thickness on the magnetic moment, Curie temperature and magnetic dimensionality of the magnetic layers is addressed for FeZr/AlZr multilayers. Thin FeZr layers in these structures are found to belong to the 2D XY dimensionality class. The change of the magnetic moment and Curie temperature with reduced FeZr layer thickness is quantified. In addition, the induced magnetic moment in the alloy element Zr was investigated in FeZr and CoZr alloy films. The possibility to imprint a preferred magnetization direction during thin film preparation was demonstrated for FeCoZr layers. Lastly, AlZ

We report thermal annealing and 100 MeV Si8+ swift heavy ion irradiation effects on the structural and magnetic properties of Ni-implanted HfO2 thin films. At low Ni doping concentration (1%), HfO2 thin films show ferromagnetic behavior. We clearly demonstrate the cluster free nature of our film using cross-sectional high resolution transmission microscopy and magnetization vs. temperature data. Rutherford backscattering spectrometry is used to estimate the film thickness and to establish that Ni-ions are placed in the HfO2 matrix. By comparing the results for the annealed and swift heavy ion irradiated samples, it is concluded that the enhancement in magnetic signal is closely related to the dispersion/diffusion of implanted Ni and defect creation such as oxygen vacancies. The results of magnetic force microscopy supported the observation of room temperature ferromagnetism in Ni-implanted HfO2 films.

High quality Al1xInxN/GaN bilayers, grown by metal organic chemical vapor deposition (MOCVD), were characterized using structural and optical techniques. Compositional analysis was performed using Rutherford backscattering spectrometry(RBS) and elastic recoil detection analysis (ERDA). The InN molar fraction x decreased approximately linearly with increasing growth temperature and ranged from x¼0.13 to0.24. Up tox¼0.20 the layers grow pseudomorphically to GaN with good crystalline quality. These layers show a smoothsurface with V-shaped pits. Two layers with InN contents around 24% showed partial strain relaxation. However, themechanisms leading to relaxation of compressive strain arevery different in the two samples grown both at similartemperature but with different growth rates. One sample shows a decreased c/a ratio, as expected for relaxation of the compressive strain, while In was shown to be homogeneouslydistributed with depth. The other sample started to grow withx¼0.24 but relaxed mainly by reduction of the incorporated InN content towards the lattice-match composition of x0.17. Both samples have an increased surface roughness. All samples show strong Al1xInxN band edge luminescence with large bowing parameter and Stokes’ shifts.

High quality Al1xInxN/GaN bilayers, grown by metal organic chemical vapor deposition (MOCVD), were characterized using structural and optical techniques. Compositional analysis was performed using Rutherford backscattering spectrometry(RBS) and elastic recoil detection analysis (ERDA). The InN molar fraction x decreased approximately linearly with increasing growth temperature and ranged from x¼0.13 to0.24. Up tox¼0.20 the layers grow pseudomorphically to GaN with good crystalline quality. These layers show a smoothsurface with V-shaped pits. Two layers with InN contents around 24% showed partial strain relaxation. However, themechanisms leading to relaxation of compressive strain arevery different in the two samples grown both at similartemperature but with different growth rates. One sample shows a decreased c/a ratio, as expected for relaxation of the compressive strain, while In was shown to be homogeneouslydistributed with depth. The other sample started to grow withx¼0.24 but relaxed mainly by reduction of the incorporated InN content towards the lattice-match composition of x0.17. Both samples have an increased surface roughness. All samples show strong Al1xInxN band edge luminescence with large bowing parameter and Stokes’ shifts.

Properties of magnetic thin film devices cannot be understood without detailed knowledge of their structure. For this purpose, a variety of thin film and multilayer systems have been studied. Both reciprocal space (low energy electron diffraction, reflection high energy electron diffraction, X-ray diffraction and reflectometry) and direct space (transmission electron microscopy) as well as Rutherford backscattering spectrometry have been applied. To gain understanding of an oxidation procedure for the growth of magnetite layers, thermal stability of iron layers on molybdenum seed layers has been investigated. Following the mosaicity and the out-of-plane coherence length over different ratios between the constituting layers allowed a deeper understanding of the limits of metallic superlattices. This, together with an approach to use hydrogen in the process gas during magnetron sputter epitaxy, opens routes for the growth of metallic superlattices of superior quality. A non-isostructural multilayer/superlattice system, Fe/MgO, has been investigated. In turn, this gave more understanding how superlattice diffraction patterns are suppressed by strain fields. As an alternative route to single-crystalline superlattices, amorphous multilayers present interesting opportunities. In this context, crystallization effects of iron/zirconium layers on alumiunium oxide were studied. Understanding these effects enables significant improvement in the quality of amorphous multilayers, and allows avoiding these, growing truly amorphous layers. Both the substantial improvement in quality of metallic superlattices, approaching true single-crystallinity, as well as the improvements in the growth of amorphous multilayers give rise to opportunities in the field of magnetic coupling and superconducting spin valves.

Properties of magnetic thin film devices cannot be understood without detailed knowledge of their structure. For this purpose, a variety of thin film and multilayer systems have been studied. Both reciprocal space (low energy electron diffraction, reflection high energy electron diffraction, X-ray diffraction and reflectometry) and direct space (transmission electron microscopy) as well as Rutherford backscattering spectrometry have been applied. To gain understanding of an oxidation procedure for the growth of magnetite layers, thermal stability of iron layers on molybdenum seed layers has been investigated. Following the mosaicity and the out-of-plane coherence length over different ratios between the constituting layers allowed a deeper understanding of the limits of metallic superlattices. This, together with an approach to use hydrogen in the process gas during magnetron sputter epitaxy, opens routes for the growth of metallic superlattices of superior quality. A non-isostructural multilayer/superlattice system, Fe/MgO, has been investigated. In turn, this gave more understanding how superlattice diffraction patterns are suppressed by strain fields. As an alternative route to single-crystalline superlattices, amorphous multilayers present interesting opportunities. In this context, crystallization effects of iron/zirconium layers on alumiunium oxide were studied. Understanding these effects enables significant improvement in the quality of amorphous multilayers, and allows avoiding these, growing truly amorphous layers. Both the substantial improvement in quality of metallic superlattices, approaching true single-crystallinity, as well as the improvements in the growth of amorphous multilayers give rise to opportunities in the field of magnetic coupling and superconducting spin valves.

Properties of magnetic thin film devices cannot be understood without detailed knowledge of their structure. For this purpose, a variety of thin film and multilayer systems have been studied. Both reciprocal space (low energy electron diffraction, reflection high energy electron diffraction, X-ray diffraction and reflectometry) and direct space (transmission electron microscopy) as well as Rutherford backscattering spectrometry have been applied. To gain understanding of an oxidation procedure for the growth of magnetite layers, thermal stability of iron layers on molybdenum seed layers has been investigated. Following the mosaicity and the out-of-plane coherence length over different ratios between the constituting layers allowed a deeper understanding of the limits of metallic superlattices. This, together with an approach to use hydrogen in the process gas during magnetron sputter epitaxy, opens routes for the growth of metallic superlattices of superior quality. A non-isostructural multilayer/superlattice system, Fe/MgO, has been investigated. In turn, this gave more understanding how superlattice diffraction patterns are suppressed by strain fields. As an alternative route to single-crystalline superlattices, amorphous multilayers present interesting opportunities. In this context, crystallization effects of iron/zirconium layers on alumiunium oxide were studied. Understanding these effects enables significant improvement in the quality of amorphous multilayers, and allows avoiding these, growing truly amorphous layers. Both the substantial improvement in quality of metallic superlattices, approaching true single-crystallinity, as well as the improvements in the growth of amorphous multilayers give rise to opportunities in the field of magnetic coupling and superconducting spin valves.

Properties of magnetic thin film devices cannot be understood without detailed knowledge of their structure. For this purpose, a variety of thin film and multilayer systems have been studied. Both reciprocal space (low energy electron diffraction, reflection high energy electron diffraction, X-ray diffraction and reflectometry) and direct space (transmission electron microscopy) as well as Rutherford backscattering spectrometry have been applied. To gain understanding of an oxidation procedure for the growth of magnetite layers, thermal stability of iron layers on molybdenum seed layers has been investigated. Following the mosaicity and the out-of-plane coherence length over different ratios between the constituting layers allowed a deeper understanding of the limits of metallic superlattices. This, together with an approach to use hydrogen in the process gas during magnetron sputter epitaxy, opens routes for the growth of metallic superlattices of superior quality. A non-isostructural multilayer/superlattice system, Fe/MgO, has been investigated. In turn, this gave more understanding how superlattice diffraction patterns are suppressed by strain fields. As an alternative route to single-crystalline superlattices, amorphous multilayers present interesting opportunities. In this context, crystallization effects of iron/zirconium layers on alumiunium oxide were studied. Understanding these effects enables significant improvement in the quality of amorphous multilayers, and allows avoiding these, growing truly amorphous layers. Both the substantial improvement in quality of metallic superlattices, approaching true single-crystallinity, as well as the improvements in the growth of amorphous multilayers give rise to opportunities in the field of magnetic coupling and superconducting spin valves.

Single crystal 4H-SiC films were implanted at 150 K with 1.1 MeV Al-2(2+) and subsequently annealed at elevated 2 temperatures. In addition to the damage peak, an enhancement of the backscattering yield between the surface peak and damage peak is observed. Rutherford backscattering spectrometry results indicate that the relative Si disorder at the damage peak recovers significantly as the annealing temperature increases, and the near-surface peak disappears after annealing at 570 K. However, the residual Si disorder is more resistant to high-temperature annealing in the region of the implanted Al. The maximum concentration of Al profile measured by secondary ion mass spectroscopy is a factor of 1000 lower than the level of the residual Si disorder at the same region. Analysis of these results indicates that the excess residual Si disorder around the implanted Al projected range cannot be accounted for by just the Al interstitials; instead, it appears that implanted Al stabilizes or inhibits recovery Si disorder under the current experimental conditions., QC 20100525 QC 20111020. 16th International Conference on Ion Beam Analysis. Albuquerque, NM. JUN 29-JUL 04, 2003

Amorphous alumina films, approximately 600 nm in thickness, prepared on Si(100) substrates by RF magnetron sputtering were irradiated with 2.0 MeV Si ions at a dose of 1 × 1017 ions/cm2 and the influence on the composition, microstructure, and mechanical properties was examined by Rutherford backscattering. X-ray diffraction and nano-indentation measurements. It was found that the O/Al ratio in the films was approximately 1.5, and there was no significant alteration in this ratio after ion irradiation. However, a structural change from amorphous to the crystalline ?-alumina was observed. Hardness and elastic modulus of the irradiated film were significantly increased from approximately 11 and 181 GPa up to approximately 25 and 246 GPa, respectively. © 2002 Elsevier Science B.V. All rights reserved.

The structure and the elemental depth distributions of Y1Ba2Cu3O7-d (YBCO) and La0.7Sr0.3MnO3 (LSMO) were examined by q-2q XRD, and by 1.7 MeV 4He+ Rutherford Backscattering Spectrometry (RBS) in random and channeling geometry. The YBCO layers were magnetron sputtered, with the varying parameters oxygen pressure and annealing time. The layers have high crystalline quality and an almost sharp interface with the substrate as revealed by the analysis. It is shown that the oxygen content influences considerably not only the superconducting behavior, but also the lattice parameters and the cmin parameter (the minimum yield which is the ratio of aligned to random Rutherford backscattering spectra). We have found by high-precision RBS simulation, that independent on the film quality, a disordered interface region of 20 to 30 nm is present in all structures. As a complementary study we have performed also AES depth profiling.

The structure and the elemental depth distributions of Y1Ba2Cu3O7-d (YBCO) and La0.7Sr0.3MnO3 (LSMO) were examined by q-2q XRD, and by 1.7 MeV 4He+ Rutherford Backscattering Spectrometry (RBS) in random and channeling geometry. The YBCO layers were magnetron sputtered, with the varying parameters oxygen pressure and annealing time. The layers have high crystalline quality and an almost sharp interface with the substrate as revealed by the analysis. It is shown that the oxygen content influences considerably not only the superconducting behavior, but also the lattice parameters and the cmin parameter (the minimum yield which is the ratio of aligned to random Rutherford backscattering spectra). We have found by high-precision RBS simulation, that independent on the film quality, a disordered interface region of 20 to 30 nm is present in all structures. As a complementary study we have performed also AES depth profiling.

The structure and the elemental depth distributions of Y1Ba2Cu3O7-d (YBCO) and La0.7Sr0.3MnO3 (LSMO) were examined by q-2q XRD, and by 1.7 MeV 4He+ Rutherford Backscattering Spectrometry (RBS) in random and channeling geometry. The YBCO layers were magnetron sputtered, with the varying parameters oxygen pressure and annealing time. The layers have high crystalline quality and an almost sharp interface with the substrate as revealed by the analysis. It is shown that the oxygen content influences considerably not only the superconducting behavior, but also the lattice parameters and the cmin parameter (the minimum yield which is the ratio of aligned to random Rutherford backscattering spectra). We have found by high-precision RBS simulation, that independent on the film quality, a disordered interface region of 20 to 30 nm is present in all structures. As a complementary study we have performed also AES depth profiling.