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The stability of optical beats in a chaotically oscillating laser is compared to that of a free-running continuous-wave laser using a highly efficient plasmonic photomixer. Using a chaotically oscillating laser diode, stable optical beats are observed over an operation current range of 60-90 mA. The optical spectra are stable even with frequent mode hopping. In contrast, optical beats in a free-running continuous-wave laser are not stable compared to those of a chaotically oscillating laser, because of intermittent hopping of the laser modes. The high stability of chaotically oscillating lasers makes these lasers promising candidates for optical pump sources in terahertz time-domain spectroscopy systems., source:https://opg.optica.org/oe/fulltext.cfm?uri=oe-28-17-24833&id=434277

The stability of optical beats in a chaotically oscillating laser is compared to that of a free-running continuous-wave laser using a highly efficient plasmonic photomixer. Using a chaotically oscillating laser diode, stable optical beats are observed over an operation current range of 60-90 mA. The optical spectra are stable even with frequent mode hopping. In contrast, optical beats in a free-running continuous-wave laser are not stable compared to those of a chaotically oscillating laser, because of intermittent hopping of the laser modes. The high stability of chaotically oscillating lasers makes these lasers promising candidates for optical pump sources in terahertz time-domain spectroscopy systems., source:https://opg.optica.org/oe/fulltext.cfm?uri=oe-28-17-24833&id=434277

The complex conductivity of moderately P-doped silicon wafers (1.1 plus or minus 0.2 ohm cm) at various temperatures has been deduced by using a terahertz time-domain (THz-TDS) spectroscopy. The characteristic dispersion of the complex conductivity is observed in the THz region. Temperature dependence of the complex conductivity changes dramatically around ^120 K, which is interpreted in terms of enhancement of mobility and the freezing of the carrier. The experimental data at low temperatures slightly deviates from the simple Drude model, which causes the underestimation of the mobility and overestimation of the carrier density., Prepared in cooperation with GMM, VDE/VDE-Gesellschaft Mikroelektronik, Mikro- und Feinwerktechnik; ITS, Informationstechnische Gesellschaft im VDE. This article is from the THz Conference 2000 pp297-300. This article is from ADA398789 International Conference on Terahertz Electronics (8th), Held in Darmstadt, Germany on 28-29 September 2000