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Pump–probe experiments with subfemtosecond resolution are the key to understanding electronic dynamics in quantum systems. Here we demonstrate the generation and control of subfemtosecond pulse pairs from a two-colour X-ray free-electron laser. By measuring the delay between the two pulses with an angular streaking diagnostic, we characterize the group velocity of the X-ray free-electron laser and show control of the pulse delay down to 270 as. We confirm the application of this technique to a pump–probe measurement in core-ionized para-aminophenol. These results reveal the ability to perform pump–probe experiments with subfemtosecond resolution and atomic site specificity.

Directly imaging structural dynamics involving hydrogen atoms by ultrafast diffraction methods is complicated by their low scattering cross sections. Here we demonstrate that megaelectronvolt ultrafast electron diffraction is sufficiently sensitive to follow hydrogen dynamics in isolated molecules. In a study of the photodissociation of gas phase ammonia, we simultaneously observe signatures of the nuclear and corresponding electronic structure changes resulting from the dissociation dynamics in the time-dependent diffraction. Both assignments are confirmed by ab initio simulations of the photochemical dynamics and the resulting diffraction observable. While the temporal resolution of the experiment is insufficient to resolve the dissociation in time, our results represent an important step towards the observation of proton dynamics in real space and time.

Nonradiative processes limit optoelectronic functionality of nanocrystals and curb their device performance. Nevertheless, the dynamic structural origins of nonradiative relaxations in such materials are not understood. Here, femtosecond electron diffraction measurements corroborated by atomistic simulations uncover transient lattice deformations accompanying radiationless electronic processes in colloidal semiconductor nanocrystals. Investigation of the excitation energy dependence in a core/shell system shows that hot carriers created by a photon energy considerably larger than the bandgap induce structural distortions at nanocrystal surfaces on few picosecond timescales associated with the localization of trapped holes. On the other hand, carriers created by a photon energy close to the bandgap of the core in the same system result in transient lattice heating that occurs on a much longer 200 picosecond timescale, dominated by an Auger heating mechanism. Elucidation of the structural deformations associated with the surface trapping of hot holes provides atomic-scale insights into the mechanisms deteriorating optoelectronic performance and a pathway towards minimizing these losses in nanocrystal devices.

Femtosecond carrier dynamics in layered 2H-MoTe2 semiconductor crystals have been investigated using soft x-ray transient absorption spectroscopy at the x-ray free-electron laser (XFEL) of the Pohang Accelerator Laboratory. Following above-bandgap optical excitation of 2H-MoTe2, the photoexcited hole distribution is directly probed via short-lived transitions from the Te 3d 5/2 core level (M5-edge, 572-577 eV) to transiently unoccupied states in the valence band. The optically excited electrons are separately probed via the reduced absorption probability at the Te M5-edge involving partially occupied states of the conduction band. A 400 ± 110 fs delay is observed between this transient electron signal near the conduction band minimum compared to higher-lying states within the conduction band, which we assign to hot electron relaxation. Additionally, the transient absorption signals below and above the Te M5 edge, assigned to photoexcited holes and electrons, respectively, are observed to decay concomitantly on a 1-2 ps timescale, which is interpreted as electron-hole recombination. The present work provides a benchmark for applications of XFELs for soft x-ray absorption studies of carrier-specific dynamics in semiconductors, and future opportunities enabled by this method are discussed.

Water is one of the most important, yet least understood, liquids in nature. Many anomalous properties of liquid water originate from its well-connected hydrogen bond network1, including unusually efficient vibrational energy redistribution and relaxation2. An accurate description of the ultrafast vibrational motion of water molecules is essential for understanding the nature of hydrogen bonds and many solution-phase chemical reactions. Most existing knowledge of vibrational relaxation in water is built upon ultrafast spectroscopy experiments2-7. However, these experiments cannot directly resolve the motion of the atomic positions and require difficult translation of spectral dynamics into hydrogen bond dynamics. Here, we measure the ultrafast structural response to the excitation of the OH stretching vibration in liquid water with femtosecond temporal and atomic spatial resolution using liquid ultrafast electron scattering. We observed a transient hydrogen bond contraction of roughly 0.04 Å on a timescale of 80 femtoseconds, followed by a thermalization on a timescale of approximately 1 picosecond. Molecular dynamics simulations reveal the need to treat the distribution of the shared proton in the hydrogen bond quantum mechanically to capture the structural dynamics on femtosecond timescales. Our experiment and simulations unveil the intermolecular character of the water vibration preceding the relaxation of the OH stretch.

[Figure: see text].

Water is one of the most important, yet least understood, liquids in nature. Many anomalous properties of liquid water originate from its well-connected hydrogen bond network, including unusually efficient vibrational energy redistribution and relaxation2. An accurate description of the ultrafast vibrational motion of water molecules is essential for understanding the nature of hydrogen bonds and many solution-phase chemical reactions. Most existing knowledge of vibrational relaxation in water is built upon ultrafast spectroscopy experiments. However, these experiments cannot directly resolve the motion of the atomic positions and require difficult translation of spectral dynamics into hydrogen bond dynamics. Here, we measure the ultrafast structural response to the excitation of the OH stretching vibration in liquid water with femtosecond temporal and atomic spatial resolution using liquid ultrafast electron scattering. We observed a transient hydrogen bond contraction of roughly 0.04 Å on a timescale of 80 femtoseconds, followed by a thermalization on a timescale of approximately 1 picosecond. Molecular dynamics simulations reveal the need to treat the distribution of the shared proton in the hydrogen bond quantum mechanically to capture the structural dynamics on femtosecond timescales. Our experiment and simulations unveil the intermolecular character of the water vibration preceding the relaxation of the OH stretch.

Quantum fluid droplets made of helium-3 (3He) or helium-4 (4He) isotopes have long been considered as ideal cryogenic nanolabs, enabling unique ultracold chemistry and spectroscopy applications. The droplets were believed to provide a homogeneous environment in which dopant atoms and molecules could move and react almost as in free space but at temperatures close to absolute zero. Here, we report ultrafast x-ray diffraction experiments on xenon-doped 3He and 4He nanodroplets, demonstrating that the unavoidable rotational excitation of isolated droplets leads to highly anisotropic and inhomogeneous interactions between the host matrix and enclosed dopants. Superfluid 4He droplets are laced with quantum vortices that trap the embedded particles, leading to the formation of filament-shaped clusters. In comparison, dopants in 3He droplets gather in diffuse, ring-shaped structures along the equator. The shapes of droplets carrying filaments or rings are direct evidence that rotational excitation is the root cause for the inhomogeneous dopant distributions.

Nonradiative processes limit optoelectronic functionality of nanocrystals and curb their device performance. Nevertheless, the dynamic structural origins of nonradiative relaxations in such materials are not understood. Here, femtosecond electron diffraction measurements corroborated by atomistic simulations uncover transient lattice deformations accompanying radiationless electronic processes in colloidal semiconductor nanocrystals. Investigation of the excitation energy dependence in a core/shell system shows that hot carriers created by a photon energy considerably larger than the bandgap induce structural distortions at nanocrystal surfaces on few picosecond timescales associated with the localization of trapped holes. On the other hand, carriers created by a photon energy close to the bandgap of the core in the same system result in transient lattice heating that occurs on a much longer 200 picosecond timescale, dominated by an Auger heating mechanism. Elucidation of the structural deformations associated with the surface trapping of hot holes provides atomic-scale insights into the mechanisms deteriorating optoelectronic performance and a pathway towards minimizing these losses in nanocrystal devices.

Femtosecond carrier dynamics in layered 2H-MoTe2 semiconductor crystals have been investigated using soft x-ray transient absorption spectroscopy at the x-ray free-electron laser (XFEL) of the Pohang Accelerator Laboratory. Following above-bandgap optical excitation of 2H-MoTe2, the photoexcited hole distribution is directly probed via short-lived transitions from the Te 3d 5/2 core level (M5-edge, 572-577 eV) to transiently unoccupied states in the valence band. The optically excited electrons are separately probed via the reduced absorption probability at the Te M5-edge involving partially occupied states of the conduction band. A 400 ± 110 fs delay is observed between this transient electron signal near the conduction band minimum compared to higher-lying states within the conduction band, which we assign to hot electron relaxation. Additionally, the transient absorption signals below and above the Te M5 edge, assigned to photoexcited holes and electrons, respectively, are observed to decay concomitantly on a 1-2 ps timescale, which is interpreted as electron-hole recombination. The present work provides a benchmark for applications of XFELs for soft x-ray absorption studies of carrier-specific dynamics in semiconductors, and future opportunities enabled by this method are discussed.

Water is one of the most important, yet least understood, liquids in nature. Many anomalous properties of liquid water originate from its well-connected hydrogen bond network1, including unusually efficient vibrational energy redistribution and relaxation2. An accurate description of the ultrafast vibrational motion of water molecules is essential for understanding the nature of hydrogen bonds and many solution-phase chemical reactions. Most existing knowledge of vibrational relaxation in water is built upon ultrafast spectroscopy experiments2-7. However, these experiments cannot directly resolve the motion of the atomic positions and require difficult translation of spectral dynamics into hydrogen bond dynamics. Here, we measure the ultrafast structural response to the excitation of the OH stretching vibration in liquid water with femtosecond temporal and atomic spatial resolution using liquid ultrafast electron scattering. We observed a transient hydrogen bond contraction of roughly 0.04 Å on a timescale of 80 femtoseconds, followed by a thermalization on a timescale of approximately 1 picosecond. Molecular dynamics simulations reveal the need to treat the distribution of the shared proton in the hydrogen bond quantum mechanically to capture the structural dynamics on femtosecond timescales. Our experiment and simulations unveil the intermolecular character of the water vibration preceding the relaxation of the OH stretch.

We present ultrafast resonant inelastic x-ray scattering (RIXS) experiments performed at the vanadium L edge to track changes in the electronic structure of V2O3, a classical Mott-Hubbard material. The probed orbital excitations within the d shell of the V ion show a sub-ps time response, which evolves at later times to a state that appears electronically indistinguishable from the high-temperature metallic state. For low excitation fluences, a transient recovery or delay is observed, which could be related to a transient dimerization of the V-V bonds. Our results demonstrate the great potential for RIXS spectroscopy to study the ultrafast orbital dynamics in strongly correlated materials.

We present ultrafast resonant inelastic x-ray scattering (RIXS) experiments performed at the vanadium L edge to track changes in the electronic structure of V2O3, a classical Mott-Hubbard material. The probed orbital excitations within the d shell of the V ion show a sub-ps time response, which evolves at later times to a state that appears electronically indistinguishable from the high-temperature metallic state. For low excitation fluences, a transient recovery or delay is observed, which could be related to a transient dimerization of the V-V bonds. Our results demonstrate the great potential for RIXS spectroscopy to study the ultrafast orbital dynamics in strongly correlated materials.

We present ultrafast resonant inelastic x-ray scattering (RIXS) experiments performed at the vanadium L edge to track changes in the electronic structure of V2O3, a classical Mott-Hubbard material. The probed orbital excitations within the d shell of the V ion show a sub-ps time response, which evolves at later times to a state that appears electronically indistinguishable from the high-temperature metallic state. For low excitation fluences, a transient recovery or delay is observed, which could be related to a transient dimerization of the V-V bonds. Our results demonstrate the great potential for RIXS spectroscopy to study the ultrafast orbital dynamics in strongly correlated materials.

The antioxidant activity of Spirulina platensis polysaccharide (SPP) was investigated in Caenorhabditis elegans. Nuclearmagnetic resonance, Fourier-transform infrared, multi-angle laser light scattering, and GC-MS were used to identify the structural characteristics of SPP. It was composed of the -> 2)-alpha-L-Rhap-(1 ->, -> 4)-beta-D-Manp-(1 ->, -> 6)-beta-D-Glcp-(1 ->, -> 4)-beta-Xylp-(1 ->, -> 3)-beta-L-Araf-(1 ->, and -> 2)-beta-L-Fucp-(1 ->, respectively. The modulation of gut microbiota in C. elegans was determined using 16S rRNA gene high-throughput sequencing. The malondialdehyde (MDA) content was significantly decreased, while the total superoxide dismutase (T-SOD) and reactive oxygen species (ROS) levels were improved after SPP supplementation. The cellular mitochondrial content and apoptosis were significantly down-regulated. The obvious increased levels of the DAF-16 and SKN-1 mRNAs were observed in the SPP-treated group, while the levels of miR-48 and miR-51 were significantly reduced. Moreover, SPP administration significantly increased the abundance of Flavobacterium, Achromobacter, Empedobacter, Anaerolinea, and Pseudoalteromonas of the intestinal flora. Based on these results, S. platensis polysaccharides may be used as a functional food to ameliorate diseases related to oxidative stress.

Metal nanocrystals exhibit important optoelectronic and photocatalytic functionalities in response to light. These dynamic energy conversion processes have been commonly studied by transient optical probes to date, but an understanding of the atomistic response following photoexcitation has remained elusive. Here, we use femtosecond resolution electron diffraction to investigate transient lattice responses in optically excited colloidal gold nanocrystals, revealing the effects of nanocrystal size and surface ligands on the electron-phonon coupling and thermal relaxation dynamics. First, we uncover a strong size effect on the electron-phonon coupling, which arises from reduced dielectric screening at the nanocrystal surfaces and prevails independent of the optical excitation mechanism (i.e., inter- and intraband). Second, we find that surface ligands act as a tuning parameter for hot carrier cooling. Particularly, gold nanocrystals with thiol-based ligands show significantly slower carrier cooling as compared to amine-based ligands under intraband optical excitation due to electronic coupling at the nanocrystal/ligand interfaces. Finally, we spatiotemporally resolve thermal transport and heat dissipation in photoexcited nanocrystal films by combining electron diffraction with stroboscopic elastic scattering microscopy. Taken together, we resolve the distinct thermal relaxation time scales ranging from 1 ps to 100 ns associated with the multiple interfaces through which heat flows at the nanoscale. Our findings provide insights into optimization of gold nanocrystals and their thin films for photocatalysis and thermoelectric applications.

We employ few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy to reveal simultaneously the intra- and interband carrier relaxation and the light-induced structural dynamics in nanoscale thin films of layered 2H-MoTe2 semiconductor. By interrogating the valence electronic structure via localized Te 4d (39-46 eV) and Mo 4p (35-38 eV) core levels, the relaxation of the photoexcited hole distribution is directly observed in real time. We obtain hole thermalization and cooling times of 15 ± 5 fs and 380 ± 90 fs, respectively, and an electron-hole recombination time of 1.5 ± 0.1 ps. Furthermore, excitations of coherent out-of-plane A1g (5.1 THz) and in-plane E1g (3.7 THz) lattice vibrations are visualized through oscillations in the XUV absorption spectra. By comparison to Bethe-Salpeter equation simulations, the spectral changes are mapped to real-space excited-state displacements of the lattice along the dominant A1g coordinate. By directly and simultaneously probing the excited carrier distribution dynamics and accompanying femtosecond lattice displacement in 2H-MoTe2 within a single experiment, our work provides a benchmark for understanding the interplay between electronic and structural dynamics in photoexcited nanomaterials.

We employ few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy to reveal simultaneously the intra- and interband carrier relaxation and the light-induced structural dynamics in nanoscale thin films of layered 2H-MoTe2 semiconductor. By interrogating the valence electronic structure via localized Te 4d (39-46 eV) and Mo 4p (35-38 eV) core levels, the relaxation of the photoexcited hole distribution is directly observed in real time. We obtain hole thermalization and cooling times of 15 ± 5 fs and 380 ± 90 fs, respectively, and an electron-hole recombination time of 1.5 ± 0.1 ps. Furthermore, excitations of coherent out-of-plane A1g (5.1 THz) and in-plane E1g (3.7 THz) lattice vibrations are visualized through oscillations in the XUV absorption spectra. By comparison to Bethe-Salpeter equation simulations, the spectral changes are mapped to real-space excited-state displacements of the lattice along the dominant A1g coordinate. By directly and simultaneously probing the excited carrier distribution dynamics and accompanying femtosecond lattice displacement in 2H-MoTe2 within a single experiment, our work provides a benchmark for understanding the interplay between electronic and structural dynamics in photoexcited nanomaterials.

Metal nanocrystals exhibit important optoelectronic and photocatalytic functionalities in response to light. These dynamic energy conversion processes have been commonly studied by transient optical probes to date, but an understanding of the atomistic response following photoexcitation has remained elusive. Here, we use femtosecond resolution electron diffraction to investigate transient lattice responses in optically excited colloidal gold nanocrystals, revealing the effects of nanocrystal size and surface ligands on the electron-phonon coupling and thermal relaxation dynamics. First, we uncover a strong size effect on the electron-phonon coupling, which arises from reduced dielectric screening at the nanocrystal surfaces and prevails independent of the optical excitation mechanism (i.e., inter- and intraband). Second, we find that surface ligands act as a tuning parameter for hot carrier cooling. Particularly, gold nanocrystals with thiol-based ligands show significantly slower carrier cooling as compared to amine-based ligands under intraband optical excitation due to electronic coupling at the nanocrystal/ligand interfaces. Finally, we spatiotemporally resolve thermal transport and heat dissipation in photoexcited nanocrystal films by combining electron diffraction with stroboscopic elastic scattering microscopy. Taken together, we resolve the distinct thermal relaxation time scales ranging from 1 ps to 100 ns associated with the multiple interfaces through which heat flows at the nanoscale. Our findings provide insights into optimization of gold nanocrystals and their thin films for photocatalysis and thermoelectric applications.

We present ultrafast resonant inelastic x-ray scattering (RIXS) experiments performed at the vanadium L edge to track changes in the electronic structure of V2O3, a classical Mott-Hubbard material. The probed orbital excitations within the d shell of the V ion show a sub-ps time response, which evolves at later times to a state that appears electronically indistinguishable from the high-temperature metallic state. For low excitation fluences, a transient recovery or delay is observed, which could be related to a transient dimerization of the V-V bonds. Our results demonstrate the great potential for RIXS spectroscopy to study the ultrafast orbital dynamics in strongly correlated materials.

We present ultrafast resonant inelastic x-ray scattering (RIXS) experiments performed at the vanadium L edge to track changes in the electronic structure of V2O3, a classical Mott-Hubbard material. The probed orbital excitations within the d shell of the V ion show a sub-ps time response, which evolves at later times to a state that appears electronically indistinguishable from the high-temperature metallic state. For low excitation fluences, a transient recovery or delay is observed, which could be related to a transient dimerization of the V-V bonds. Our results demonstrate the great potential for RIXS spectroscopy to study the ultrafast orbital dynamics in strongly correlated materials.

Photo-induced non-radiative energy dissipation is a potential pathway to induce structural-phase transitions in two-dimensional materials. For advancing this field, a quantitative understanding of real-time atomic motion and lattice temperature is required. However, this understanding has been incomplete due to a lack of suitable experimental techniques. Here, we use ultrafast electron diffraction to directly probe the subpicosecond conversion of photoenergy to lattice vibrations in a model bilayered semiconductor, molybdenum diselenide. We find that when creating a high charge carrier density, the energy is efficiently transferred to the lattice within one picosecond. First-principles nonadiabatic quantum molecular dynamics simulations reproduce the observed ultrafast increase in lattice temperature and the corresponding conversion of photoenergy to lattice vibrations. Nonadiabatic quantum simulations further suggest that a softening of vibrational modes in the excited state is involved in efficient and rapid energy transfer between the electronic system and the lattice.

Photo-induced non-radiative energy dissipation is a potential pathway to induce structural-phase transitions in two-dimensional materials. For advancing this field, a quantitative understanding of real-time atomic motion and lattice temperature is required. However, this understanding has been incomplete due to a lack of suitable experimental techniques. Here, we use ultrafast electron diffraction to directly probe the subpicosecond conversion of photoenergy to lattice vibrations in a model bilayered semiconductor, molybdenum diselenide. We find that when creating a high charge carrier density, the energy is efficiently transferred to the lattice within one picosecond. First-principles nonadiabatic quantum molecular dynamics simulations reproduce the observed ultrafast increase in lattice temperature and the corresponding conversion of photoenergy to lattice vibrations. Nonadiabatic quantum simulations further suggest that a softening of vibrational modes in the excited state is involved in efficient and rapid energy transfer between the electronic system and the lattice.

Oligosaccharides from green algae Ulva lactuca (ULO) and Enteromorpha prolifera (EPO) were used for investigation of anti-ageing effects and the underlying mechanism in SAMP8 mice. The structural properties of ULO and EPO were analyzed by fourier-transform infrared spectroscopy, gas chromatography-mass spectrometry, and agarose gel electrophoresis. These oligosaccharides enhanced the glutathione, superoxide dismutase, catalase, and telomerase levels and total antioxidant capicity, and decreased the levels of malondialdehyde and advanced glycation end products. After ULO and EPO treatment, the levels of inflammatory factors, including IFN-gamma, TNF-alpha, and IL-6, decreased; the BDNF and ChAT levels increased; and hippocampal neurons were protected. Downregulation of the p53 and FOXO1 genes and upregulation of the Sirt1 gene indicated that ULO and EPO have potential therapeutic effects in the prevention of ageing in SAMP8 mice. By 16S rRNA gene high-throughput sequencing, the abundance of Desulfovibrio was discovered to be markedly different in mice treated with ULO and EPO. The abundances of Verrucomicrobiaceae, Odoribacteraceae, Mogibacteriaceae, Planococcaceae, and Coriobacteriaceae were positively correlated with age-related indicators. These results demonstrated that oligosaccharides from U. lactuca and E. prolifera are ideal candidate compounds that can be used in functional foods and pharmaceuticals to prevent ageing.

The development of ultrafast gas electron diffraction with nonrelativistic electrons has enabled the determination of molecular structures with atomic spatial resolution. It has, however, been challenging to break the picosecond temporal resolution barrier and achieve the goal that has long been envisioned—making space- and-time resolved molecular movies of chemical reaction in the gas-phase. Recently, an ultrafast electron diffraction (UED) apparatus using mega-electron-volt (MeV) electrons was developed at the SLAC National Accelerator Laboratory for imaging ultrafast structural dynamics of molecules in the gas phase. The SLAC gas-phase MeV UED has achieved 65 fs root mean square temporal resolution, 0.63A˚ spatial resolution, and 0.22A˚-1 reciprocal-space resolution. Such high spatial-temporal resolution has enabled the capturing of real-time molecular movies of fundamental photochemical mechanisms, such as chemical bond breaking, ring opening, and a nuclear wave packet crossing a conical intersection. In this paper, the design that enables the high spatial-temporal resolution of the SLAC gas phase MeV UED is presented. The compact design of the differential pump section of the SLAC gas phase MeV UED realized five orders-of-magnitude vacuum isolation between the electron source and gas sample chamber. The spatial resolution, temporal resolution, and long-term stability of the apparatus are systematically characterized.

Strong-field induced ionization and dissociation dynamics of vinyl bromide, CH2=CHBr, are probed using femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy. Strong-field ionization is initiated with an intense femtosecond, near infrared (NIR, 775 nm) laser field. Femtosecond XUV pulses covering the photon energy range of 50-72 eV probe the subsequent dynamics by measuring the time-dependent spectroscopic features associated with transitions of the Br (3d) inner-shell electrons to vacancies in molecular and atomic valence orbitals. Spectral signatures are observed for the depletion of neutral C2H3Br, the formation of C2H3Br(+) ions in their ground (X̃) and first excited (Ã) states, the production of C2H3Br(++) ions, and the appearance of neutral Br ((2)P3/2) atoms by dissociative ionization. The formation of free Br ((2)P3/2) atoms occurs on a timescale of 330 ± 150 fs. The ionic à state exhibits a time-dependent XUV absorption energy shift of ∼0.4 eV within the time window of the atomic Br formation. The yield of Br atoms correlates with the yield of parent ions in the à state as a function of NIR peak intensity. The observations suggest that a fraction of vibrationally excited C2H3Br(+) (Ã) ions undergoes intramolecular vibrational energy redistribution followed by the C-Br bond dissociation. The C2H3Br(+) (X̃) products and the majority of the C2H3Br(++) ions are relatively stable due to a deeper potential well and a high dissociation barrier, respectively. The results offer powerful new insights about orbital-specific electronic processes in high field ionization, coupled vibrational relaxation and dissociation dynamics, and the correlation of valence hole-state location and dissociation in polyatomic molecules, all probed simultaneously by ultrafast table-top XUV spectroscopy.

Strong-field induced ionization and dissociation dynamics of vinyl bromide, CH2=CHBr, are probed using femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy. Strong-field ionization is initiated with an intense femtosecond, near infrared (NIR, 775 nm) laser field. Femtosecond XUV pulses covering the photon energy range of 50-72 eV probe the subsequent dynamics by measuring the time-dependent spectroscopic features associated with transitions of the Br (3d) inner-shell electrons to vacancies in molecular and atomic valence orbitals. Spectral signatures are observed for the depletion of neutral C2H3Br, the formation of C2H3Br(+) ions in their ground (X̃) and first excited (Ã) states, the production of C2H3Br(++) ions, and the appearance of neutral Br ((2)P3/2) atoms by dissociative ionization. The formation of free Br ((2)P3/2) atoms occurs on a timescale of 330 ± 150 fs. The ionic à state exhibits a time-dependent XUV absorption energy shift of ∼0.4 eV within the time window of the atomic Br formation. The yield of Br atoms correlates with the yield of parent ions in the à state as a function of NIR peak intensity. The observations suggest that a fraction of vibrationally excited C2H3Br(+) (Ã) ions undergoes intramolecular vibrational energy redistribution followed by the C-Br bond dissociation. The C2H3Br(+) (X̃) products and the majority of the C2H3Br(++) ions are relatively stable due to a deeper potential well and a high dissociation barrier, respectively. The results offer powerful new insights about orbital-specific electronic processes in high field ionization, coupled vibrational relaxation and dissociation dynamics, and the correlation of valence hole-state location and dissociation in polyatomic molecules, all probed simultaneously by ultrafast table-top XUV spectroscopy.

Ultrafast femtosecond (10-15 s) dynamics of atomic xenon, vinyl bromide and carbon disulfide molecules are studied using a newly developed method of extreme ultraviolet (XUV) transient absorption spectroscopy. This research work is devoted to a deeper understanding of the fundamental electronic and nuclear dynamics using XUV light pulses from a high-order harmonic generation source. The produced XUV light pulses are utilized to selectively probe the chemical reaction coordinate with femtosecond temporal resolution. The experimental apparatus for transient absorption pump-probe spectroscopy is described in detail. The research described in this thesis contains four different gaseous atomic and molecular systems. The first system in the study is motivated by a goal to gain a better understanding of the core-excited state couplings of atomic xenon near zero delay between an intense NIR pump pulse (780 nm) and an XUV probe pulse. Secondly, the ionization and dissociation dynamics of molecular vinyl bromide (C2H3Br) under the influence of strong-field ionization are investigated. Finally, an ongoing research project of CS2 and thiophene molecules is presented for future studies of spin-orbit wavepacket and ring-opening dynamics, respectively.The NIR induced core-excited state coupling of atomic xenon is studied using femtosecond XUV transient absorption spectroscopy with photon energies between 50 eV to 70 eV. Coupling of the core-excited states 4d-1(2D5/2)6p(2P3/2) (65.1 eV) and 4d-1(2D3/2)6p(2P1/2) (67.0 eV) to neighboring states by the NIR field results in a threefold enhancement of XUV transmission. The induced transmission at 65.1 eV (67.0 eV) changes from 3.2 ± 0.4% (5.9 ± 0.5%) without the coupling laser to 9 ± 2% (22 ± 5%) at the maximum of the NIR field. A NIR field induced broad XUV absorption feature ranging from 60 eV to 65 eV is explained by the splitting of the field free absorption lines into multiplets when the Rabi frequencies of the coupling transitions

Ultrafast femtosecond (10-15 s) dynamics of atomic xenon, vinyl bromide and carbon disulfide molecules are studied using a newly developed method of extreme ultraviolet (XUV) transient absorption spectroscopy. This research work is devoted to a deeper understanding of the fundamental electronic and nuclear dynamics using XUV light pulses from a high-order harmonic generation source. The produced XUV light pulses are utilized to selectively probe the chemical reaction coordinate with femtosecond temporal resolution. The experimental apparatus for transient absorption pump-probe spectroscopy is described in detail. The research described in this thesis contains four different gaseous atomic and molecular systems. The first system in the study is motivated by a goal to gain a better understanding of the core-excited state couplings of atomic xenon near zero delay between an intense NIR pump pulse (780 nm) and an XUV probe pulse. Secondly, the ionization and dissociation dynamics of molecular vinyl bromide (C2H3Br) under the influence of strong-field ionization are investigated. Finally, an ongoing research project of CS2 and thiophene molecules is presented for future studies of spin-orbit wavepacket and ring-opening dynamics, respectively.The NIR induced core-excited state coupling of atomic xenon is studied using femtosecond XUV transient absorption spectroscopy with photon energies between 50 eV to 70 eV. Coupling of the core-excited states 4d-1(2D5/2)6p(2P3/2) (65.1 eV) and 4d-1(2D3/2)6p(2P1/2) (67.0 eV) to neighboring states by the NIR field results in a threefold enhancement of XUV transmission. The induced transmission at 65.1 eV (67.0 eV) changes from 3.2 ± 0.4% (5.9 ± 0.5%) without the coupling laser to 9 ± 2% (22 ± 5%) at the maximum of the NIR field. A NIR field induced broad XUV absorption feature ranging from 60 eV to 65 eV is explained by the splitting of the field free absorption lines into multiplets when the Rabi frequencies of the coupling transitions

Understanding interfacial charge-transfer processes on the atomic level is crucial to support the rational design of energy-challenge relevant systems such as solar cells, batteries, and photocatalysts. A femtosecond time-resolved core-level photoelectron spectroscopy study is performed that probes the electronic structure of the interface between ruthenium-based N3 dye molecules and ZnO nanocrystals within the first picosecond after photoexcitation and from the unique perspective of the Ru reporter atom at the center of the dye. A transient chemical shift of the Ru 3d inner-shell photolines by (2.3 ± 0.2) eV to higher binding energies is observed 500 fs after photoexcitation of the dye. The experimental results are interpreted with the aid of ab initio calculations using constrained density functional theory. Strong indications for the formation of an interfacial charge-transfer state are presented, providing direct insight into a transient electronic configuration that may limit the efficiency of photoinduced free charge-carrier generation.

Understanding interfacial charge-transfer processes on the atomic level is crucial to support the rational design of energy-challenge relevant systems such as solar cells, batteries, and photocatalysts. A femtosecond time-resolved core-level photoelectron spectroscopy study is performed that probes the electronic structure of the interface between ruthenium-based N3 dye molecules and ZnO nanocrystals within the first picosecond after photoexcitation and from the unique perspective of the Ru reporter atom at the center of the dye. A transient chemical shift of the Ru 3d inner-shell photolines by (2.3 ± 0.2) eV to higher binding energies is observed 500 fs after photoexcitation of the dye. The experimental results are interpreted with the aid of ab initio calculations using constrained density functional theory. Strong indications for the formation of an interfacial charge-transfer state are presented, providing direct insight into a transient electronic configuration that may limit the efficiency of photoinduced free charge-carrier generation.

Based on the multiple subbands quasi-ballistic transport theory, we investigate the electronic transport of nano size In0.53Ga0.47As nFinFETs with Al2O3 gate dielectric, emphasizing the saturation current region. 1D mobile charge density and gate capacitance density are introduced for the first time to describe the nano-FinFET transport property under volume inversion. With the extracted effective channel mobility of electrons in the linear region from our experiments, the electron mean free path. in the channel with the value of 5-9 nm is obtained. With only one fitting parameter alpha = 0.31 for the critical length l = L(kT/q/v(d))(alpha) in the quasi-ballistic transport theory, the calculated drain current can fit all experimental data for various gate voltage V-g, source-drain voltage V-d, and temperature (240-332 K) in overall very good agreement. The backscattering coefficient r in the saturation region is larger than 0.8, indicating a large room for improvement for the present InGaAs FinFET technology and performance.

Based on the multiple subbands quasi-ballistic transport theory, we investigate the electronic transport of nano size In0.53Ga0.47As nFinFETs with Al2O3 gate dielectric, emphasizing the saturation current region. 1D mobile charge density and gate capacitance density are introduced for the first time to describe the nano-FinFET transport property under volume inversion. With the extracted effective channel mobility of electrons in the linear region from our experiments, the electron mean free path. in the channel with the value of 5-9 nm is obtained. With only one fitting parameter alpha = 0.31 for the critical length l = L(kT/q/v(d))(alpha) in the quasi-ballistic transport theory, the calculated drain current can fit all experimental data for various gate voltage V-g, source-drain voltage V-d, and temperature (240-332 K) in overall very good agreement. The backscattering coefficient r in the saturation region is larger than 0.8, indicating a large room for improvement for the present InGaAs FinFET technology and performance.

The reliability performance of InxGa1-xAs n-MOSFETs with Al2O3 gate dielectric under positive-bias temperature instability stress is investigated. The following new phenomena are demonstrated: 1) There are high densities of fast interface traps N-it and slow oxide border traps N-SOX near the interface between InGaAs and Al2O3. The border traps are more fragile under stress, and therefore, the stress mainly induces border traps. 2) The stress-induced border traps consist of permanent acceptor traps and recoverable donor traps. Acceptor trap energy density Delta D-SOX(Acceptor) (E) is mainly distributed above the conduction band edge E-c of InGaAs with a tail extending to the midgap, whereas donor trap energy density Delta D-SOX(Donor) (E) has a large distribution inside the InGaAs energy gap with a tail extending to the conduction band. 3) Flicker noise variation after stress and its correlation to the acceptor and donor trap generation and recovery are demonstrated. 4) The recoverable donor traps induce the subthreshold slope and off-current degradation in the stress phase and recover in the recovery phase and also induce continuous degradation of on-current in the recovery phase. The permanent acceptor traps induce the transconductance and on-current degradation. The long-term device lifetime is mainly determined by the generation rate of the acceptor traps. 5) Comprehensive comparison between the Si and InGaAs MOSFETs' degradation behaviors under bias temperature instability stress is presented. The physical recovery of donor oxide traps in dielectric in InGaAs/Al2O3 has never been observed in a Si MOS structure, deserving special attention and further investigation.

The reliability performance of InxGa1-xAs n-MOSFETs with Al2O3 gate dielectric under positive-bias temperature instability stress is investigated. The following new phenomena are demonstrated: 1) There are high densities of fast interface traps N-it and slow oxide border traps N-SOX near the interface between InGaAs and Al2O3. The border traps are more fragile under stress, and therefore, the stress mainly induces border traps. 2) The stress-induced border traps consist of permanent acceptor traps and recoverable donor traps. Acceptor trap energy density Delta D-SOX(Acceptor) (E) is mainly distributed above the conduction band edge E-c of InGaAs with a tail extending to the midgap, whereas donor trap energy density Delta D-SOX(Donor) (E) has a large distribution inside the InGaAs energy gap with a tail extending to the conduction band. 3) Flicker noise variation after stress and its correlation to the acceptor and donor trap generation and recovery are demonstrated. 4) The recoverable donor traps induce the subthreshold slope and off-current degradation in the stress phase and recover in the recovery phase and also induce continuous degradation of on-current in the recovery phase. The permanent acceptor traps induce the transconductance and on-current degradation. The long-term device lifetime is mainly determined by the generation rate of the acceptor traps. 5) Comprehensive comparison between the Si and InGaAs MOSFETs' degradation behaviors under bias temperature instability stress is presented. The physical recovery of donor oxide traps in dielectric in InGaAs/Al2O3 has never been observed in a Si MOS structure, deserving special attention and further investigation.

A compact set of equations based on the multiple subbands quasi-ballistic transport theory is developed, and is used to investigate the channel electron effective mobility in recently reported In0.53Ga0.47As/Al2O3 tri-gate n-FinFET. The extracted electron effective mobility mu(n) is around 370 cm(2)/V.s at low V-g-V-th bias at room temperature and decreases with increasing V-g, and increases with increasing temperature (240-332K). It is very different from the case of Si n-MOSFETs, where the electron mobility decreases with increasing temperature. The low channel effective mobility and the ab-normal temperature dependence of mu(n) are ascribed to the high acceptor interface trap and border trap energy densities in the conduction band energy of InGaAs. The ballistic channel resistance R-Ball at low V-ds is calculated and compared with the measured channel resistance R-CH. The low transmission coefficient T = R-Ball/R-CH approximate to 0.06 to 0.05 indicates that there is a large room to improve the InGaAs/Al2O3 n-FinFET performance.

A compact set of equations based on the multiple subbands quasi-ballistic transport theory is developed, and is used to investigate the channel electron effective mobility in recently reported In0.53Ga0.47As/Al2O3 tri-gate n-FinFET. The extracted electron effective mobility mu(n) is around 370 cm(2)/V.s at low V-g-V-th bias at room temperature and decreases with increasing V-g, and increases with increasing temperature (240-332K). It is very different from the case of Si n-MOSFETs, where the electron mobility decreases with increasing temperature. The low channel effective mobility and the ab-normal temperature dependence of mu(n) are ascribed to the high acceptor interface trap and border trap energy densities in the conduction band energy of InGaAs. The ballistic channel resistance R-Ball at low V-ds is calculated and compared with the measured channel resistance R-CH. The low transmission coefficient T = R-Ball/R-CH approximate to 0.06 to 0.05 indicates that there is a large room to improve the InGaAs/Al2O3 n-FinFET performance.

The reliability performance of InxGa1-xAs n-type metal-oxide-semiconductor field-effect transistors with Al2O3 gate dielectric under positive-bias temperature instability stress is investigated systematically. A model of stress-induced border traps was proposed to interpret all charge pumping and I-V experimental results excellently. The stress-induced border traps include recoverable donor traps and permanent acceptor traps with respective energy densities Delta D-SOX(Donor) (E) and Delta D-SOX(Acceptor) (E). The shapes of Delta D-SOX(Donor) (E) and Delta D-SOX(Acceptor) (E) have been extracted from experimental data Delta D-SOX(Acceptor) (E) mainly distributes in the conduction band of InGaAs with a tail extending to the mid-gap, whereas Delta D-SOX(Donor) (E) has a large distribution inside the energy gap and extends to the conduction band. The high density of Delta D-SOX(Donor) (E) in the energy gap induces large degradation in the OFF-current, which is particularly serious when the In composition x is raised to 0.65.

The reliability performance of InxGa1-xAs n-type metal-oxide-semiconductor field-effect transistors with Al2O3 gate dielectric under positive-bias temperature instability stress is investigated systematically. A model of stress-induced border traps was proposed to interpret all charge pumping and I-V experimental results excellently. The stress-induced border traps include recoverable donor traps and permanent acceptor traps with respective energy densities Delta D-SOX(Donor) (E) and Delta D-SOX(Acceptor) (E). The shapes of Delta D-SOX(Donor) (E) and Delta D-SOX(Acceptor) (E) have been extracted from experimental data Delta D-SOX(Acceptor) (E) mainly distributes in the conduction band of InGaAs with a tail extending to the mid-gap, whereas Delta D-SOX(Donor) (E) has a large distribution inside the energy gap and extends to the conduction band. The high density of Delta D-SOX(Donor) (E) in the energy gap induces large degradation in the OFF-current, which is particularly serious when the In composition x is raised to 0.65.

A novel recovery-free interface-trap measurement method is presented in detail. This method is the modification of the conventional charge pumping (CP) by extending the pulse low level to the stress-bias and minimizing the pulse high-level duty cycle to suppress the recovery effect. The method is applied to study the negative-bias temperature instability in p-MOSFETs. As compared with the conventional CP, a much larger interface-trap generation under stress is observed by the new method. A power law time dependence (similar to t(n)) of interface-trap generation is observed. The index n. is less than that derived from conventional CP and increases with temperature, demonstrating a dispersive process involved in the trap generation dynamics., QC 20110414

Yin-Ching Chan1,6, Chia-Chuan Wu1,6, Kung-Chi Chan1, Yo-Giao Lin1, Jiunn-Wang Liao3, Ming-Fu Wang1, Yung-Ho Chang1, Kee-Ching Jeng2,4,51Departments of Food and Nutrition and 2Applied Mathematics, Providence University, Taichung; 3Graduate Institutes of Veterinary Pathology and 4Medical Technology, National Chung Hsing University, Taichung, Taiwan; 5Department of Education and Research, Taichung Veterans General Hospital, Taichung, Taiwan; 6These authors have contributed equally to this workAbstract: Soy isoflavones may have applications in cancer prevention and anti-inflammation, therefore this study was conducted to investigate the effect of dietary supplementation with black soybean on the immune response in the senescence-accelerated-prone mice (SAMP8) and -resistant mice (SAMPR1, as controls). The mechanism of isoflavones was also investigated. Six-month-old male SAMP8 and SAMR1 mice were divided into the control groups and experimental groups supplemented with nanonized (Nano-soy) or microparticled (Micro-soy) black soybeans (n = 8/group), respectively for 12 weeks. Human peripheral blood mononuclear cells (PBMC) and murine splenocytes were stimulated with mitogens and cytokines were determined by reverse transcriptase-polymerase chain reaction and/or ELISA. The results showed that body weight, food intake, and relative weights of organs did not differ among the SAMP8 control and experimental groups. Isoflavone (daidzin and genistin) intake was higher in the Nano-soy group than the Micro-soy group. The lymphoproliferation and production of interleukin-2 (IL-2) and interferon-gamma (IFN-γ) in the Nano-soy group had a significantly higher (P<0.05) than those in the control and Micro-soy groups. The Nano-soy supplemented mice reached these cytokine levels similar to SAMR1 mice. This result was consistent with the in vitro data that daidzein (a metabolite of daidzin), at a concentration of 10 μM, increased IL-2, IL-4, and IFN-γ pro

Yin-Ching Chan1,6, Chia-Chuan Wu1,6, Kung-Chi Chan1, Yo-Giao Lin1, Jiunn-Wang Liao3, Ming-Fu Wang1, Yung-Ho Chang1, Kee-Ching Jeng2,4,51Departments of Food and Nutrition and 2Applied Mathematics, Providence University, Taichung; 3Graduate Institutes of Veterinary Pathology and 4Medical Technology, National Chung Hsing University, Taichung, Taiwan; 5Department of Education and Research, Taichung Veterans General Hospital, Taichung, Taiwan; 6These authors have contributed equally to this workAbstract: Soy isoflavones may have applications in cancer prevention and anti-inflammation, therefore this study was conducted to investigate the effect of dietary supplementation with black soybean on the immune response in the senescence-accelerated-prone mice (SAMP8) and -resistant mice (SAMPR1, as controls). The mechanism of isoflavones was also investigated. Six-month-old male SAMP8 and SAMR1 mice were divided into the control groups and experimental groups supplemented with nanonized (Nano-soy) or microparticled (Micro-soy) black soybeans (n = 8/group), respectively for 12 weeks. Human peripheral blood mononuclear cells (PBMC) and murine splenocytes were stimulated with mitogens and cytokines were determined by reverse transcriptase-polymerase chain reaction and/or ELISA. The results showed that body weight, food intake, and relative weights of organs did not differ among the SAMP8 control and experimental groups. Isoflavone (daidzin and genistin) intake was higher in the Nano-soy group than the Micro-soy group. The lymphoproliferation and production of interleukin-2 (IL-2) and interferon-gamma (IFN-γ) in the Nano-soy group had a significantly higher (P<0.05) than those in the control and Micro-soy groups. The Nano-soy supplemented mice reached these cytokine levels similar to SAMR1 mice. This result was consistent with the in vitro data that daidzein (a metabolite of daidzin), at a concentration of 10 μM, increased IL-2, IL-4, and IFN-γ pro

A call center in a company is a centralized office that answers incoming telephone calls from customers or makes outgoing telephone calls to customers. A call center may also provide fax, Voice over IP (VoIP), e-mail or web-based interactions. This paper proposes a plug-in modular architecture for an Internet call center with waiting time prediction. We implement this plug-in module in the SIP Express Router (SER) platform. Then we propose two output measures and develop a discrete event simulation model to investigate the performance of the waiting time prediction algorithm for the call center. Our study indicates that the waiting times can be more accurately predicted when the call arrival rate is large.

A call center in a company is a centralized office that answers incoming telephone calls from customers or makes outgoing telephone calls to customers. A call center may also provide fax, Voice over IP (VoIP), e-mail or web-based interactions. This paper proposes a plug-in modular architecture for an Internet call center with waiting time prediction. We implement this plug-in module in the SIP Express Router (SER) platform. Then we propose two output measures and develop a discrete event simulation model to investigate the performance of the waiting time prediction algorithm for the call center. Our study indicates that the waiting times can be more accurately predicted when the call arrival rate is large.

A call center in a company is a centralized office that answers incoming telephone calls from customers or makes outgoing telephone calls to customers. A call center may also provide fax, Voice over IP (VoIP), e-mail or web-based interactions. This paper proposes a plug-in modular architecture for an Internet call center with waiting time prediction. We implement this plug-in module in the SIP Express Router (SER) platform. Then we propose two output measures and develop a discrete event simulation model to investigate the performance of the waiting time prediction algorithm for the call center. Our study indicates that the waiting times can be more accurately predicted when the call arrival rate is large.

We collected information concerning diagnosed allergy from 2027 school children in Japan, Taiwan and Vietnam. Children were classified according to the age and sex-specific body mass index (BMI) per-age as indicator of weight status. Logistic regression was performed to examine the relationship between percentiles of BMI-per-age and allergy. Compared with children at the lowest percentile group Taiwanese children at>85th percentile group showed a tendency toward higher risk of allergy (OR=1.79, 95% CI 0.98 to 3.27 p=0.060).When children with rhino-conjunctivitis were excluded from the analysis the association reached statistical significance (OR=2.89,95% CI 1.08 to 7.75 p= 0.035).Vietnamese children at>85th percentile group showed a significantly higher risk of allergy (OR= 2.34,95% CI 1.06 to 5.17 p=0.035). This association was not observed when children with atopic dermatitis or food allergy were excluded from the analysis, although a tendency toward increased risk of allergy at BMI-per-age>85th percentile remained. Our study sample of Japanese school children showed no association between being overweight and allergy.