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Background While ALPPS triggers a fast liver hypertrophy, it is still unclear which factors matter most to achieve accelerated hypertrophy within a short period of time. The aim of the study was to identify patient-intrinsic factors related to the growth of the future liver remnant (FLR). Methods This cohort study is composed of data derived from the International ALPPS Registry from November 2011 and October 2018. We analyse the influence of demographic, tumour type and perioperative data on the growth of the FLR. The volume of the FLR was calculated in millilitre and percentage using computed-tomography (CT) scans before and after stage 1, both according to Vauthey formula. Results A total of 734 patients were included from 99 centres. The median sFLR at stage 1 and stage 2 was 0.23 (IQR, 0.18–0.28) and 0.39 (IQR: 0.31–0.46), respectively. The variables associated with a lower increase from sFLR1 to sFLR2 were age˃68 years (p = .02), height ˃1.76 m (p ˂ .01), weight ˃83 kg (p ˂ .01), BMI˃28 (p ˂ .01), male gender (p ˂ .01), antihypertensive therapy (p ˂ .01), operation time ˃370 minutes (p ˂ .01) and hospital stay˃14 days (p ˂ .01). The time required to reach sufficient volume for stage 2, male gender accounts 40.3% in group ˂7 days, compared with 50% of female, and female present 15.3% in group ˃14 days compared with 20.6% of male. Conclusions Height, weight, FLR size and gender could be the variables that most constantly influence both daily growths, the interstage increase and the standardized FLR before the second stage.

Hydrogenation is a promising technique to prepare black TiO2 (H-TiO2) for solar water splitting, however, there remain limitations such as severe preparation conditions and underexplored hydrogenation mechanisms to inefficient hydrogenation and poor photoelectrochemical (PEC) performance to be overcome for practical applications. Here, a room-temperature and rapid plasma hydrogenation (RRPH) strategy that realizes low-energy hydrogen ions of below 250 eV to fabricate H-TiO2 nanorods with controllable disordered shell, outperforming incumbent hydrogenations, is reported. The mechanisms of efficient RRPH and enhanced PEC activity are experimentally and theoretically unraveled. It is discovered that low-energy hydrogen ions with fast subsurface transport kinetics and shallow penetration depth features, enable them to directly penetrate TiO2 via unique multiple penetration pathways to form controllable disordered shell and suppress bulk defects, ultimately leading to improved PEC performance. Furthermore, the hydrogenation-property experiments reveal that the enhanced PEC activity is mainly ascribed to increasing band bending and bulk defect suppression, compared to reported H-TiO2, a superior photocurrent density of 2.55 mA cm−2 at 1.23 VRHE is achieved. These findings demonstrate a sustainable strategy which offers great promise of TiO2 and other oxides to achieve further-improved material properties for broad practical applications. © 2022 Wiley-VCH GmbH.

Tuning oxygen mass transport properties at the nanoscale offers a promising approach for developing high performing energy materials. A number of strategies for engineering interfaces with enhanced oxygen diffusivity and surface exchange have been proposed. However, the origin and the magnitude of such local effects remain largely undisclosed to date due to the lack of direct measurement tools with sufficient resolution. In this work, atom probe tomography with sub-nanometer resolution is used to study oxygen mass transport on oxygen-isotope exchanged thin films of lanthanum chromite. A direct 3D visualization of nanoscaled highly conducting oxygen incorporation pathways along grain boundaries, with reliable quantification of the oxygen kinetic parameters and correlative link to local chemistries, is presented. Combined with finite element simulations of the exact nanostructure, isotope exchange-atom probe tomography allowed quantifying an enhancement in the grain boundary oxygen diffusivity and in the surface exchange coefficient of lanthanum chromite of about 4 and 3 orders of magnitude, respectively, compared to the bulk. This remarkable increase of the oxygen kinetics in an interface-dominated material is unambiguously attributed to grain boundary conduction highways thanks to the use of a powerful technique that can be straightforwardly extended to the study of currently inaccessible multiple nanoscale mass transport phenomena.

Black TiO2 has demonstrated a great potential for a variety of renewable energy technologies. However, its practical application is heavily hindered due to lack of efficient hydrogenation methods and a deeper understanding of hydrogenation mechanisms. Here, a simple and straightforward hot wire annealing (HWA) method is presented to prepare black TiO2 (H–TiO2) nanorods with enhanced photo-electrochemical (PEC) activity by means of atomic hydrogen [H]. Compared to conventional molecular hydrogen approaches, the HWA shows remarkable effectiveness without any detrimental side effects on the device structure, and simultaneously the photocurrent density of H–TiO2 reaches 2.5 mA cm−2 (at 1.23 V vs reversible hydrogen electrode (RHE)). Due to the controllable and reproducible [H] flux, the HWA can be developed as a standard hydrogenation method for black TiO2. Meanwhile, the relationships between the wire temperatures, structural, optical, and photo-electrochemical properties are systematically investigated to verify the improved PEC activity. Furthermore, the density functional theory (DFT) study provides a comprehensive insight not only into the highly efficient mechanism of the HWA approach but also its favorably low-energy-barrier hydrogenation pathway. The findings will have a profound impact on the broad energy applications of H–TiO2 and contribute to the fundamental understanding of its hydrogenation. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Black TiO2 has demonstrated a great potential for a variety of renewable energy technologies. However, its practical application is heavily hindered due to lack of efficient hydrogenation methods and a deeper understanding of hydrogenation mechanisms. Here, a simple and straightforward hot wire annealing (HWA) method is presented to prepare black TiO2 (H–TiO2) nanorods with enhanced photo-electrochemical (PEC) activity by means of atomic hydrogen [H]. Compared to conventional molecular hydrogen approaches, the HWA shows remarkable effectiveness without any detrimental side effects on the device structure, and simultaneously the photocurrent density of H–TiO2 reaches 2.5 mA cm−2 (at 1.23 V vs reversible hydrogen electrode (RHE)). Due to the controllable and reproducible [H] flux, the HWA can be developed as a standard hydrogenation method for black TiO2. Meanwhile, the relationships between the wire temperatures, structural, optical, and photo-electrochemical properties are systematically investigated to verify the improved PEC activity. Furthermore, the density functional theory (DFT) study provides a comprehensive insight not only into the highly efficient mechanism of the HWA approach but also its favorably low-energy-barrier hydrogenation pathway. The findings will have a profound impact on the broad energy applications of H–TiO2 and contribute to the fundamental understanding of its hydrogenation. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Black TiO2 has demonstrated a great potential for a variety of renewable energy technologies. However, its practical application is heavily hindered due to lack of efficient hydrogenation methods and a deeper understanding of hydrogenation mechanisms. Here, a simple and straightforward hot wire annealing (HWA) method is presented to prepare black TiO2 (H–TiO2) nanorods with enhanced photo-electrochemical (PEC) activity by means of atomic hydrogen [H]. Compared to conventional molecular hydrogen approaches, the HWA shows remarkable effectiveness without any detrimental side effects on the device structure, and simultaneously the photocurrent density of H–TiO2 reaches 2.5 mA cm−2 (at 1.23 V vs reversible hydrogen electrode (RHE)). Due to the controllable and reproducible [H] flux, the HWA can be developed as a standard hydrogenation method for black TiO2. Meanwhile, the relationships between the wire temperatures, structural, optical, and photo-electrochemical properties are systematically investigated to verify the improved PEC activity. Furthermore, the density functional theory (DFT) study provides a comprehensive insight not only into the highly efficient mechanism of the HWA approach but also its favorably low-energy-barrier hydrogenation pathway. The findings will have a profound impact on the broad energy applications of H–TiO2 and contribute to the fundamental understanding of its hydrogenation. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Recently, colored H-doped TiO2 (H-TiO2) has demonstrated enhanced photoelectrochemical (PEC) performance due to its unique crystalline core—disordered shell nanostructures and consequent enhanced conduction behaviors between the core-shell homo-interfaces. Although various hydrogenation approaches to obtain H-TiO2 have been developed, such as high temperature hydrogen furnace tube annealing, high pressure hydrogen annealing, hydrogen-plasma assisted reaction, aluminum reduction and electrochemical reduction etc., there is still a lack of a hydrogenation approach in a controlled manner where all processing parameters (temperature, time and hydrogen flux) were precisely controlled in order to improve the PEC performance of H-TiO2 and understand the physical insight of enhanced PEC performance. Here, we report for the first time a controlled and local rapid thermal annealing (RTA) approach to prepare hydrogenated core-shell H-TiO2 nanorods grown on F:SnO2 (FTO) substrate in order to address the degradation issue of FTO in the typical TiO2 nanorods/FTO system observed in the conventional non-RTA treated approaches. Without the FTO degradation in the RTA approach, we systematically studied the intrinsic relationship between the annealing temperature, structural, optical, and photoelectrochemical properties in order to understand the role of the disordered shell on the improved photoelectrochemical behavior of H-TiO2 nanorods. Our investigation shows that the improvement of PEC performance could be attributed to (i) band gap narrowing from 3.0 to 2.9 eV; (ii) improved optical absorption in the visible range induced by the three-dimensional (3D) morphology and rough surface of the disordered shell; (iii) increased proper donor density; (iv) enhanced electron–hole separation and injection efficiency due to the formation of disordered shell after hydrogenation. The RTA approach developed

Recently, colored H-doped TiO2 (H-TiO2) has demonstrated enhanced photoelectrochemical (PEC) performance due to its unique crystalline core—disordered shell nanostructures and consequent enhanced conduction behaviors between the core-shell homo-interfaces. Although various hydrogenation approaches to obtain H-TiO2 have been developed, such as high temperature hydrogen furnace tube annealing, high pressure hydrogen annealing, hydrogen-plasma assisted reaction, aluminum reduction and electrochemical reduction etc., there is still a lack of a hydrogenation approach in a controlled manner where all processing parameters (temperature, time and hydrogen flux) were precisely controlled in order to improve the PEC performance of H-TiO2 and understand the physical insight of enhanced PEC performance. Here, we report for the first time a controlled and local rapid thermal annealing (RTA) approach to prepare hydrogenated core-shell H-TiO2 nanorods grown on F:SnO2 (FTO) substrate in order to address the degradation issue of FTO in the typical TiO2 nanorods/FTO system observed in the conventional non-RTA treated approaches. Without the FTO degradation in the RTA approach, we systematically studied the intrinsic relationship between the annealing temperature, structural, optical, and photoelectrochemical properties in order to understand the role of the disordered shell on the improved photoelectrochemical behavior of H-TiO2 nanorods. Our investigation shows that the improvement of PEC performance could be attributed to (i) band gap narrowing from 3.0 to 2.9 eV; (ii) improved optical absorption in the visible range induced by the three-dimensional (3D) morphology and rough surface of the disordered shell; (iii) increased proper donor density; (iv) enhanced electron–hole separation and injection efficiency due to the formation of disordered shell after hydrogenation. The RTA approach developed

Recently, colored H-doped TiO2 (H-TiO2) has demonstrated enhanced photoelectrochemical (PEC) performance due to its unique crystalline core—disordered shell nanostructures and consequent enhanced conduction behaviors between the core-shell homo-interfaces. Although various hydrogenation approaches to obtain H-TiO2 have been developed, such as high temperature hydrogen furnace tube annealing, high pressure hydrogen annealing, hydrogen-plasma assisted reaction, aluminum reduction and electrochemical reduction etc., there is still a lack of a hydrogenation approach in a controlled manner where all processing parameters (temperature, time and hydrogen flux) were precisely controlled in order to improve the PEC performance of H-TiO2 and understand the physical insight of enhanced PEC performance. Here, we report for the first time a controlled and local rapid thermal annealing (RTA) approach to prepare hydrogenated core-shell H-TiO2 nanorods grown on F:SnO2 (FTO) substrate in order to address the degradation issue of FTO in the typical TiO2 nanorods/FTO system observed in the conventional non-RTA treated approaches. Without the FTO degradation in the RTA approach, we systematically studied the intrinsic relationship between the annealing temperature, structural, optical, and photoelectrochemical properties in order to understand the role of the disordered shell on the improved photoelectrochemical behavior of H-TiO2 nanorods. Our investigation shows that the improvement of PEC performance could be attributed to (i) band gap narrowing from 3.0 to 2.9 eV; (ii) improved optical absorption in the visible range induced by the three-dimensional (3D) morphology and rough surface of the disordered shell; (iii) increased proper donor density; (iv) enhanced electron–hole separation and injection efficiency due to the formation of disordered shell after hydrogenation. The RTA approach developed

The physicochemical properties used in numerous advanced nanostructured devices are directly controlled by the oxidation states of their constituents. In this work we combine electron energy-loss spectroscopy, blind source separation, and computed tomography to reconstruct in three dimensions the distribution of Fe2+ and Fe3+ ions in a FeO/Fe3O4 core/shell cube-shaped nanoparticle with nanometric resolution. The results highlight the sharpness of the interface between both oxides and provide an average shell thickness, core volume, and average cube edge length measurements in agreement with the magnetic characterization of the sample.

Strain effects on epitaxial thin films of LaNiO3 grown on different single crystalline substrates are studied by Raman scattering and first-principles simulation. New Raman modes, not present in bulk or fully relaxed films, appear under both compressive and tensile strains indicating symmetry reductions. Interestingly, the Raman spectra and the underlying crystal symmetry for tensile and compressively strained films are different. Extensive mapping of LaNiO3 phase stability is addressed by simulations, showing that a variety of crystalline phases are indeed stabilized under strain. The calculated Raman frequencies reproduce the principal features of the experimental spectra, supporting the validity of the multiple strain-driven structural transitions predicted by the simulations.

Strain effects on epitaxial thin films of LaNiO3 grown on different single crystalline substrates are studied by Raman scattering and first-principles simulation. New Raman modes, not present in bulk or fully relaxed films, appear under both compressive and tensile strains indicating symmetry reductions. Interestingly, the Raman spectra and the underlying crystal symmetry for tensile and compressively strained films are different. Extensive mapping of LaNiO3 phase stability is addressed by simulations, showing that a variety of crystalline phases are indeed stabilized under strain. The calculated Raman frequencies reproduce the principal features of the experimental spectra, supporting the validity of the multiple strain-driven structural transitions predicted by the simulations.

Silicon nanocrystals embedded in SiC are studied by spectrophotometry and photoluminescence (PL) spectroscopy. Absorptivities are found to be affected by residual Fabry-Perot interference arising from measurements of reflection and transmission at locations of different film thickness. Multiple computational and experimental methods to avoid these errors in thin film measurements, in general, are discussed. Corrected absorptivity depends on the quantity of Si embedded in the SiC but is independent of the Si crystallinity, indicating a relaxation of the k-conservation criterion for optical transitions in the nanocrystals. Tauc gaps of 1.8-2.0 and 2.12 eV are determined for Si nanoclusters and SiC, respectively. PL spectra exhibit a red-shift of similar to 100 nm per nm nominal Si nanocluster diameter, which is in agreement with quantum confinement but revealed to be an artifact entirely due to Fabry-Perot interference. Several simple experimental methods to diagnose or avoid interference in PL measurements are developed that are applicable to all thin films. Corrected PL is rather weak and invariant with passivation, indicating that non-paramagnetic defects are responsible for rapid non-radiative recombination. They are also responsible for the broad, sub-gap PL of the SiC, and can wholly account for the form of the PL of samples with Si nanoclusters. The PL intensity of samples with Si nanoclusters, however, can only be explained with an increased density of luminescent defects in the SiC due to Si nanoclusters, efficient tunneling of photogenerated carriers from Si nanoclusters to SiC defects, or with emission from a-Si nanoclusters. Films prepared on Si exhibit much weaker PL than the same films prepared on quartz substrates., QC 20150324

The intimate relationship between stoichiometry and physicochemical properties in transition-metal oxides makes them appealing as tunable materials. These features become exacerbated when dealing with nanostructures. However, due to the complexity of nanoscale materials, establishing a distinct relationship between structure-morphology and functionalities is often complicated. In this regard, in the FexO/Fe3O4 system a largely unexplained broad dispersion of magnetic properties has been observed. Here we show, thanks to a comprehensive multi-technique approach, a clear correlation between the magneto-structural properties in large (45 nm) and small (9 nm) FexO/Fe3O4 core/shell nanoparticles that can explain the spread of magnetic behaviors. The results reveal that while the FexO core in the large nanoparticles is antiferromagnetic and has bulk-like stoichiometry and unit-cell parameters, the FexO core in the small particles is highly non-stoichiometric and strained, displaying no significant antiferromagnetism. These results highlight the importance of ample characterization to fully understand the properties of nanostructured metal oxides., AuthorCount:22

Superlattices containing 3 nm thick silicon rich silicon nitride sublayers and 3 nm and 10 nm thick SiO2 barriers were prepared by plasma enhanced chemical vapor deposition. Despite the as-prepared samples represented a well-kept multilayer structure with smooth interfaces, the high temperature annealing resulted in the total destruction of multilayer structure in the samples containing 3 nm SiO2 barriers. Energy-filtered transmission electron microscopy images of these samples indicated a silicon nanoclusters formation with sizes of 2.5-12.5 nm, which were randomly distributed within the structure. Although in the sample with 10 nm SiO2 barriers some fragments of the multilayer structure could be still observed after thermal annealing, nevertheless, the formation of large nanocrystals with diameters up to 10 nm was confirmed by dark field transmission electron microscopy. Thus, in contrast to the previously published results, the expected size control of silicon nanocrystals was lost. According to the FTIR results, the thermal annealing of SiNx/SiO2 superlattices led to the formation of silicon nanocrystals in mostly oxynitride matrix. Annealed samples demonstrated a photoluminescence peak at 885 nm related to the luminescence of silicon nanocrystals, as confirmed by time-resolved photoluminescence measurements. The loss of nanocrystals size control is discussed in terms of the migration of oxygen atoms from the SiO2 barriers into the silicon rich silicon nitride sublayers. A thermodynamic mechanism responsible for this process is proposed. According to this mechanism, the driving force for the oxygen migration is the gain in the configuration entropy related to the relative arrangements of oxygen and nitrogen atoms., QC 20140811

Superlattices of Si-rich silicon nitride and Si3N4 are prepared by plasma-enhanced chemical vapor deposition and, subsequently, annealed at 1150 degrees C to form size-controlled Si nanocrystals (Si NCs) embedded in amorphous Si3N4. Despite well defined structural properties, photoluminescence spectroscopy (PL) reveals inconsistencies with the typically applied model of quantum confined excitons in nitride-embedded Si NCs. Time-resolved PL measurements demonstrate 10(5) times faster time-constants than typical for the indirect band structure of Si NCs. Furthermore, a pure Si3N4 reference sample exhibits a similar PL peak as the Si NC samples. The origin of this luminescence is discussed in detail on the basis of radiative defects and Si3N4 band tail states in combination with optical absorption measurements. The apparent absence of PL from the Si NCs is explained conclusively using electron spin resonance data from the Si/Si3N4 interface defect literature. In addition, the role of Si3N4 valence band tail states as potential hole traps is discussed. Most strikingly, the PL peak blueshift with decreasing NC size, which is often observed in literature and typically attributed to quantum confinement (QC), is identified as optical artifact by transfer matrix method simulations of the PL spectra. Finally, criteria for a critical examination of a potential QC-related origin of the PL from Si3N4-embedded Si NCs are suggested., QC 20140711

Superlattices of Si3N4 and Si-rich silicon nitride thin layers with varying thickness were prepared by plasma enhanced chemical vapor deposition. After high temperature annealing, Si nanocrystals were formed in the former Si-rich nitride layers. The control of the Si quantum dots size via the SiNx layer thickness was confirmed by transmission electron microscopy. The size of the nanocrystals was well in agreement with the former thickness of the respective Si-rich silicon nitride layers. In addition X-ray diffraction evidenced that the Si quantum dots are crystalline whereas the Si3N4 matrix remains amorphous even after annealing at 1200 degrees C. Despite the proven Si nanocrystals formation with controlled sizes, the photoluminescence was 2 orders of magnitude weaker than for Si nanocrystals in SiO2 matrix. Also, a systematic peak shift was not found. The SiNx/Si3N4 superlattices showed photoluminescence peak positions in the range of 540-660nm (2.3-1.9 eV), thus quite similar to the bulk Si3N4 film having peak position at 577nm (2.15 eV). These rather weak shifts and scattering around the position observed for stoichiometric Si3N4 are not in agreement with quantum confinement theory. Therefore theoretical calculations coupled with the experimental results of different barrier thicknesses were performed. As a result the commonly observed photoluminescence red shift, which was previously often attributed to quantum-confinement effect for silicon nanocrystals, was well described by the interference effect of Si3N4 surrounding matrix luminescence., QC 20140113