1. Broadband Photodetection of Centimeter-Scale T-Phase Gallium Telluride Grown by Molecular Beam Epitaxy
- Author
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Cheng, Yijun, Wang, Jiali, He, Zhihao, Chen, Mingyi, Guo, Xinhao, Deng, Bo, Ye, Quanlin, Li, Shuwei, Chen, Huanjun, Sou, Iam Keong, Wu, Shuxiang, Cheng, Yijun, Wang, Jiali, He, Zhihao, Chen, Mingyi, Guo, Xinhao, Deng, Bo, Ye, Quanlin, Li, Shuwei, Chen, Huanjun, Sou, Iam Keong, and Wu, Shuxiang
- Abstract
Two-dimensional (2D) semiconductors have recently attracted considerable attention due to their promising applications in future integrated electronic and optoelectronic devices. Large-scale synthesis of high-quality 2D semiconductors is an increasingly essential requirement for practical applications, such as sensing, imaging, and communications. In this work, homogeneous 2D GaTe films on a centimeter scale are epitaxially grown on fluorphlogopite mica substrates by molecular beam epitaxy (MBE). The epitaxial GaTe thin films showed an atomically 2D layered lattice structure with a T phase, which has not been discovered in the GaTe geometric isomer. Furthermore, semiconducting behavior and high mobility above room temperature were found in T-GaTe epitaxial films, which are essential for application in semiconducting devices. The T-GaTe-based photodetectors demonstrated respectable photodetection performance with a responsivity of 13 mA/W and a fast response speed. By introducing monolayer graphene as the substrate, we successfully realized high-quality GaTe/graphene heterostructures. The performance has been significantly improved, such as the responsivity was enhanced more than 20 times. These results highlight a feasible scheme for exploring the crystal phase of 2D GaTe and realizing the controlled growth of GaTe films on large substrates, which could promote the development of broadband, high-performance, and large-scale photodetection applications.
- Published
- 2024