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Cervical spinal cord injury (SCI) causes extensive impairments for individuals which may include dextrous hand function. Although prior work has focused on the recovery at the person-level, the factors determining the recovery of individual muscles are poorly understood. Here, we investigate the muscle-specific recovery after cervical spinal cord injury in a retrospective analysis of 748 individuals from the European Multicenter Study about Spinal Cord Injury (NCT01571531). We show associations between corticospinal tract (CST) sparing and upper extremity recovery in SCI, which improves the prediction of hand muscle strength recovery. Our findings suggest that assessment strategies for muscle-specific motor recovery in acute spinal cord injury are improved by accounting for CST sparing, and complement person-level predictions.

Sputtered amorphous indium-gallium-zinc -oxide (a-IGZO) Schottky barrier diodes (SBDs) were comparatively investigated without and with a passivation layer (PL). The a-IGZO SBDs without PLs were found to be highly unstable in the atmosphere and under electrical stress. During the implementation of silicon dioxide (SiO2) PL, the associated thermal oxidization and hydrogen doping resulted in high-performance metrics, including an ideality factor close to the unity, a high Schottky barrier of 0.82 eV, and a large current rectification ratio of over 108. Benefited from the PL protection and ideal Schottky contact, the environmental and electrical stabilities of SBDs were significantly enhanced.

Sputtered amorphous indium-gallium-zinc -oxide (a-IGZO) Schottky barrier diodes (SBDs) were comparatively investigated without and with a passivation layer (PL). The a-IGZO SBDs without PLs were found to be highly unstable in the atmosphere and under electrical stress. During the implementation of silicon dioxide (SiO2) PL, the associated thermal oxidization and hydrogen doping resulted in high-performance metrics, including an ideality factor close to the unity, a high Schottky barrier of 0.82 eV, and a large current rectification ratio of over 108. Benefited from the PL protection and ideal Schottky contact, the environmental and electrical stabilities of SBDs were significantly enhanced.

Sputtered amorphous indium-gallium-zinc -oxide (a-IGZO) Schottky barrier diodes (SBDs) were comparatively investigated without and with a passivation layer (PL). The a-IGZO SBDs without PLs were found to be highly unstable in the atmosphere and under electrical stress. During the implementation of silicon dioxide (SiO2) PL, the associated thermal oxidization and hydrogen doping resulted in high-performance metrics, including an ideality factor close to the unity, a high Schottky barrier of 0.82 eV, and a large current rectification ratio of over 108. Benefited from the PL protection and ideal Schottky contact, the environmental and electrical stabilities of SBDs were significantly enhanced.