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Mixed-dimensional heterostructures provide additional freedom to construct diverse functional electronic and optoelectronic devices, gaining significant interest. Herein, highly-aligned pseudo-1D tellurium is epitaxially grown on 2D monolayer transition metal dichalcogenides (TMDs), including MoSe2, MoS2, and WS2. A one-pot chemical vapor deposition (CVD) technique eliminates the normally required transfer steps, thereby producing mixed-dimensional heterostructures with an ultraclean interface. The controllable epitaxial growth of Te/TMD heterostructures are verified by Raman, scanning probe microscopy (SPM), and transmission electron microscopy (TEM) observation. The photoluminescence results indicate that the emission from TMDs is quenched in the heterostructure, confirming the efficient transfer of photogenerated carriers from TMDs to Te. Additionally, the mixed-dimensional p-n Te/MoSe2 heterojunction photodetector presents self-driven behavior with high responsivity (328 mA W-1), external quantum efficiency (79%), and specific detectivity (8.2 x 10(9) Jones). The modified facile synthesis strategy and proposed growth mechanism in this study shed light on synthesizing mixed-dimensional heterojunctions. This opens avenues for fabricating functional devices with reduced sizes and high densities, further enabling miniaturization and integration opportunities.

WSe2 has a high mobility of electrons and holes, which is an ideal choice as active channels of electronics in extensive fields. However, carrier-type tunability of WSe2 still has enormous challenges, which are essential to overcome for practical applications. In this work, the direct growth of n-doped few-layer WSe2 is realized via in situ defect engineering. The n-doping of WSe2 is attributed to Se vacancies induced by the H-2 flow purged in the cooling process. The electrical measurements based on field effect transistors demonstrate that the carrier type of WSe2 synthesized is successfully transferred from the conventional p-type to the rarely reported n-type. The electron carrier concentration is efficiently modulated by the concentration of H-2 during the cooling process. Furthermore, homomaterial inverters and self-powered photodetectors are fabricated based on the doping-type-tunable WSe2. This work reveals a significant way to realize the controllable carrier type of two-dimensional (2D) materials, exhibiting great potential in future 2D electronics engineering.

Ziyuan Li,1,* Yu Gan,1,* Ting Kang,1,* Yi Zhao,1 Tianguang Huang,2 Yuhao Chen,3 Jin Liu,1 Bowen Ke1 1Department of Anesthesiology, Laboratory of Anesthesia and Critical Care Medicine, National-Local Joint Engineering Research Centre of Translational Medicine of Anesthesiology, West China Hospital, Sichuan University, Chengdu, Sichuan, People’s Republic of China; 2Frontiers Science Center for Disease-Related Molecular Network, Sichuan University West China Hospital, Sichuan University, Chengdu, Sichuan, People’s Republic of China; 3West China School of Pharmacy, Sichuan University, Chengdu, Sichuan, People’s Republic of China*These authors contributed equally to this workCorrespondence: Bowen Ke, Department of Anesthesiology, Laboratory of Anesthesia and Critical Care Medicine, National-Local Joint Engineering Research Centre of Translational Medicine of Anesthesiology, West China Hospital, Sichuan University, No. 37 Guoxue Alley, Wuhou District, Chengdu, Sichuan, People’s Republic of China, Tel +86-28-85422114, Fax +86-28-85582944, Email bowenke@scu.edu.cnBackground: The treatment of neuropathic pain is still a major troublesome clinical problem. The existing therapeutic drugs have limited analgesic effect and obvious adverse reactions, which presents opportunities and challenges for the development of new analgesic drugs. Camphor, a kind of monoterpene, has been shown anti-inflammatory and analgesic effects in traditional Chinese medicine. But we know little about its effect in neuropathic pain. In this article, We have verified the reliable analgesic effect of camphor in the neuropathic pain model caused by different predispositions.Methods: The nociceptive response of mice was induced by transient receptor potential A1 (TRPA1) agonist to verify the effect of camphor on the nociceptive response. Multiple paclitaxel (PTX) injection models, Single oxaliplatin (OXA) injection models, Chronic constriction injury (CCI) models

We demonstrate the structure evolution of hexagonal boron nitride (hBN) flakes grown on molten Cu in atmospheric pressure chemical vapor deposition by regulating the flux of precursor. We found that under lower precursor flux, tuned by temperature that controls the sublimation rates, the hBN grains change from triangle to truncated triangle shape with additional B-terminated edges, which could be understood through kinetic Wulff construction, while under higher flux, they form circular shape following deposition-controlled growth and predicted by a phase field modeling. In addition to the monolayer morphology from a single nucleation, adlayer patterns with centered aggregation and diffusive features at high precursor flux are observed and simulated by a two-dimensional (2D) diffusion-reaction model, where the random diffusion and deposition are revealed to be the dominating kinetics. The nucleation density and growth velocity could also be modulated by the ammonia borane heating temperature, where 80 degrees C is found to be optimal for the largest hBN grain size. Our transmission electron microscopy study shows that a misalignment of coalescing grains occurs on such molten Cu substrate, deviated from those observed on molten Au. Our results provide a new tool for the shape and grain size control of 2D materials and the understanding of their growth kinetics for large scale production.

In recent years, transition metal dichalcogenide (TMD)-based electronics have experienced a prosperous stage of development, and some considerable applications include field-effect transistors, photodetectors, and light-emitting diodes. Chemical vapor deposition (CVD), a typical bottom-up approach for preparing 2D materials, is widely used to synthesize large-area 2D TMD films and is a promising method for mass production to implement them for practical applications. In this review, we investigate recent progress in controlled CVD growth of 2D TMDs, aiming for controlled nucleation and orientation, using various CVD strategies such as choice of precursors or substrates, process optimization, and system engineering. We then survey different patterning methods, such as surface patterning, metal precursor patterning, and postgrowth sulfurization/selenization/tellurization, to mass produce heterostructures for device applications. With these strategies, various well-designed architectures, such as wafer-scale single crystals, vertical and lateral heterostructures, patterned structures, and arrays, are achieved. In addition, we further discuss various electronics made from CVD-grown TMDs to demonstrate the diverse application scenarios. Finally, perspectives regarding the current challenges of controlled CVD growth of 2D TMDs are also suggested. © 2022 American Chemical Society. All rights reserved.

Vanadium diselenide (VSe2) exhibits versatile electronic and magnetic properties in the trigonal prismatic (H-) and octahedral (T-) phases. Compared to the metallic T-phase, the H-phase with a tunable semiconductor property is predicted to be a ferrovalley material with spontaneous valley polarization. Herein we report an epitaxial growth of the monolayer 2D VSe2 on a mica substrate via the chemical vapor deposition (CVD) method by introducing salt in the precursor. Our first-principles calculations suggest that the monolayer H-phase VSe2 with a large lateral size is thermodynamically favorable. The honeycomb-like structure and the broken symmetry are directly observed by spherical aberration-corrected scanning transmission electron microscopy (STEM) and confirmed by giant second harmonic generation (SHG) intensity. The p-type transport behavior is further evidenced by the temperature-dependent resistance and field-effect device study. The present work introduces a new phase-stable 2D transition metal dichalcogenide, opening the prospect of novel electronic and spintronics device design.

Atomically thin monolayer semiconducting transition metal dichalcogenides (TMDs), exhibiting direct band gap and strong light-matter interaction, are promising for optoelectronic devices. However, an efficient band alignment engineering method is required to further broaden their practical applications as versatile optoelectronics. In this work, the band alignment of two vertically stacked monolayer TMDs using the chemical vapor deposition (CVD) method is effectively tuned by two strategies: 1) formulating the compositions of MoS2(1-x)Se2x alloys, and 2) varying the twist angles of the stacked heterobilayer structures. Photoluminescence (PL) results combined with density functional theory (DFT) calculation show that by changing the alloy composition, a continuously tunable band alignment and a transition of type II-type I-type II band alignment of TMD heterobilayer is achieved. Moreover, only at moderate (10°–50°) twist angles, a PL enhancement of 28%–110% caused by the type I alignment is observed, indicating that the twist angle is coupled with the global band structure of heterobilayer. A heterojunction device made with MoS0.76Se1.24/WS2 of 14° displays a significantly high photoresponsivity (55.9 A W−1), large detectivity (1.07 × 1010 Jones), and high external quantum efficiency (135%). These findings provide engineering tools for heterostructure design for their application in optoelectronic devices. © 2022 Wiley-VCH GmbH.

Lateral superlattices have been a research focus due to the strain induced in their coherent structure, while the growth of a large size heterostructure with high density of heterointerfaces remains challenging. In this work, we report a gap-filling approach to synthesize large-scale lateral mesh heterostructures of WS2 embedded in a MoS2 matrix. This synthesis method utilizes the uniformly distributed gaps in single crystalline MoS2, made by the sulfur substitution-induced transformation of metastable-MoTe2 as the growth pattern, for the second material growth. By finely controlling the growth kinetics, a highly crystalline WS2/MoS2 lateral heterostructure mesh is successfully grown. Optical images and Raman mapping show a clear spatial distribution of WS2 channels embedded in MoS2. The coherent epitaxial nature is further confirmed by scanning transmission electron microscopy, showing insignificant dislocation at the interfaces. Density function theory simulation suggests that the growth of WS2 starts from the edges of cracked MoS2. The MoS2/WS2/MoS2 heterostructure device demonstrates an intrinsic electric barrier formed at the interfaces. This work provides a new tool for the practical preparation of large-scale high density 2D heterostructures. © 2022 American Chemical Society.

Yong-Wei Yu,1,* Yang-Jing Xue,1,* La-La Qian,2 Zhi Chen,2 Jia-Qun Que,1 Kai-Yu Huang,1 Shuai Liu,1 Ying-Bei Weng,1 Fang-Ning Rong,1 Kang-Ting Ji,1 Jing-Ni Zeng1 1Department of Cardiology, The Second Affiliated and Yuying Children’s Hospital of Wenzhou Medical University, Wenzhou 312500, People’s Republic of China; 2Department of Cardiology, Pingyang County Hospital of Traditional Chinese Medicine, Wenzhou 312500, People’s Republic of China*These authors contributed equally to this workCorrespondence: Kang-Ting Ji; Jing-Ni ZengDepartment of Cardiology, The Second Affiliated and Yuying Children’s Hospital of Wenzhou Medical University, Wenzhou 312500, People’s Republic of ChinaEmail jikt@wmu.edu.cn; zengjn6015@163.comBackground: Myocardial infarction (MI) is a common cause of death worldwide. It is characterized by coronary artery occlusion that causes ischemia and hypoxia of myocardial cells, leading to irreversible myocardial damage.Materials and Methods: To explore potential targets for treatment of MI, we reorganized and analyzed two microarray datasets (GSE4648 and GSE775). The GEO2R tool was used to screen for differentially expressed genes (DEGs) between infarcted and normal myocardium. We used the Database for Annotation, Visualization and Integrated Discovery (DAVID) to perform Gene Ontology functional annotation analysis (GO analysis) and the Kyoto Encyclopedia of Genes and Genomes for pathway enrichment analysis (KEGG analysis). We examined protein–protein interactions to characterize the relationship between differentially expressed genes, and we screened potential hub genes according to the degree of connection. PCR and Western blotting were used to identify the core genes.Results: At different times of infarction, a total of 35 genes showed upregulation at all times; however, none of the genes showed downregulation at all 3 times. Similarly, 10 hub genes with high degrees of connectivity were id

In this paper, the error motion issue of machine tool spindles is investigated. Firstly, a complete dynamic model of spindle systems is presented, in which the spindle shaft is discretized with the rigid body element and the rolling bearings are modelled using Gupta's theory. Secondly, the error motion prediction method is proposed based on the spindle model above, and then verified with the measurement on a grinding spindle. The fit clearance between bearing outer rings and the housing is introduced as a design parameter for error motion prediction under various conditions. The results show that the radial and tilt error motions increases nonlinearly with the raising of both clearance and rotation speed. Lastly, the model-based optimization scheme is given and the bearing fit clearance is optimized to meet the requirement of spindle design. © 2019

Xiuli Zhang,* Zhen Tan,* Ting Kang, Chuanying Zhu, Siyu ChenDepartment of Oncology, Xin Hua Hospital, School of Medicine, Shanghai Jiao Tong University, Shanghai, People’s Republic of ChinaCorrespondence: Siyu ChenDepartment of Oncology, Xin Hua Hospital, School of Medicine, Shanghai Jiao Tong University, 1665 Kongjiang Road, Shanghai 200092, People’s Republic of ChinaTel +86 21 2507 7642Email siyu.chen@shsmu.edu.cn*These authors contributed equally to this workPurpose: Gastric carcinogenesis is a multistep process and is the second-highest cause of cancer death worldwide with a high incidence of invasion and metastasis. MicroRNAs (miRNAs) engage in complex interactions with the machinery that controls the transcriptome and concurrently target multiple mRNAs. Recent evidence has shown that miRNAs are involved in the cancer progression, including promoting cell-cycle, conferring resistance to apoptosis, and enhancing invasiveness and metastasis. Here, we aim to elucidate the roles of miRNAs, especially microRNA-4665-3p (miR-4665-3p), in the inhibitory effect of arsenic sulfide in gastric cancer (GC).Methods: The arsenic sulfide-induced miRNA expression alterations in AGS cells was determined by miRNA microarray. RT-PCR was used to further verify the arsenic sulfide-regulated miRNAs in GC tissues. The inhibition of miR-4665-3p on the migration and invasion of GC cells were determined by wound healing assay and transwell assay. Western blot analysis was used to detect the expression of EMT related proteins and the putative target of miR-4665-3p.Results: The miR-4665-3p was up-regulated by arsenic sulfide and showed inhibition upon the migration and invasion of GC cells. MiRBase and Western blotting indicated that miR-4665-3p directly down-regulated the oncoprotein GSE1. Morphological observation also indicated that the up-regulation of miR-4665-3p inhibits the EMT in GC cells.Conclusion: Our data demonstrates that the increased exp

Zhen Tan,* Xiuli Zhang,* Ting Kang, Lian Zhang, Siyu Chen Department of Oncology, Xin Hua Hospital, School of Medicine, Shanghai Jiao Tong University, Shanghai, China *These authors contributed equally to this work Purpose: Gastric and colon cancers have been the leading causes of cancer mortality in the world with limited therapy. Small molecules binding to bromodomains of bromodomain-containing protein 4 (BRD4) exert strong antitumor activities against hematological malignancies, while generally have limited efficacy in advanced solid tumors. Here, we found that the bromodomain and extra-terminal (BET)-bromodomain inhibitor JQ1, when combined with arsenic sulfide (As4S4, abbreviated as AS), synergistically decreased the expression of nuclear factor of activated T-cells (NFATs) as well as the downstream oncogene c-Myc and largely induced cell apoptosis via mitochondrial pathway in gastric and colon cancer cell lines.Methods: The synergistic cytotoxicity of AS and JQ1 in gastric and colon cancer cells was determined by MTT assay and verified by FACS assay. Western blot analysis and quantitative real-time PCR (qPCR) assay were used to detect the expression of NFATs and downstream apoptotic proteins. The mitochondrial transmembrane potential was determined by FACS assay, and the metastasis of cancer cells was detected by the wound-healing assay.Results: AS and JQ1 synergistically induced cell apoptosis in gastric and colon cancer cells by downregulating NFATs and upregulating apoptotic proteins. Combination of AS and JQ1 was associated with the decreased mitochondrial transmembrane potential, the cytochrome c release, and the subsequent caspase-3 activation.Conclusion: Thus, our data indicate that AS can effectively enhance the cytotoxicity of BET inhibitors in gastric and colon cancer cells through mitochondrial-mediated apoptosis induction. Keywords: arsenic sulfide, JQ1, NFAT, apoptosis, mitochondria

Hongyan Gao,1 Xiaodi Song,2 Ting Kang,3 Baohong Yan,4 Li Feng,5 Li Gao,6 Liang Ai,6 Xiaoni Liu,7,* Jie Yu,8,* Huiqi Li9,* 1Department of Gastroenterology, The First Affiliated Hospital of Xi’an Medical University, 2Department of Pharmacy, Xi’an Central Hospital, Xi’an, 3Department of Oncology, Yan’an University Affiliated Hospital, Yan’an, 4Department of Pharmacy, Hong-Hui Hospital, Xi’an Jiaotong University Medical College, Xi’an, 5Department of Anorectal Surgery, Ankang City Central Hospital, Ankang, 6Department of Pharmacy, Yan’an University Affiliated Hospital, 7Department of Endocrinology, Yan’an People’s Hospital, Yan’an, 8Department of General Surgery, Nuclear Industry 215 Hospital of Shaanxi Province, Xianyang, 9Department of General Surgery, The People’s Hospital of Baoji City, Baoji, People’s Republic of China *These authors contributed equally to this work Abstract: Colorectal neoplasia differentially expressed (CRNDE) is a novel gene recognized as a long noncoding RNA (lncRNA) that is highly elevated in colorectal cancer and many other solid tumors but its functions on metastasis and oxaliplatin (OXA) resistance are unknown. In our study, we confirmed the upregulation of CRNDE in both primary specimens from colorectal cancer patients and colorectal cancer cell lines. Knockdown of CRNDE expression inhibited the migration and invasion potency of colorectal cancer cells with no effect on cell apoptosis. Overexpression of CRNDE promoted the migration and invasion potency of colorectal cancer cells. Furthermore, we found that CRNDE conferred chemoresistance in colorectal cancer cells. Knockdown of CRNDE with OXA treatment decreased cell viability and promoted DNA damage and cell apoptosis, while the overexpression of CRNDE with OXA treatment reduced DNA damage and cell apoptosis. Further in-depth mechanistic studi