1. Effect of B+ Flux on the electrical activation of ultra-shallow B+ implants in Ge
- Author
-
Yates, B.R., Darby, B.L., Petersen, Dirch Hjorth, Hansen, Ole, Lin, R., Nielsen, P.F., Doyle, B.L., Kontos, A., Jones, K.S., Yates, B.R., Darby, B.L., Petersen, Dirch Hjorth, Hansen, Ole, Lin, R., Nielsen, P.F., Doyle, B.L., Kontos, A., and Jones, K.S.
- Abstract
The residual implanted dose of ultra-shallow B+ implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23% due to ion backscattering for 2 keV implants in Ge. The electrical characterization of ultra-shallow B+ implants at 2 keV to a dose of 5.0×1014 cm-2 at beam currents ranging from 0.4 to 6.4 mA has been studied using micro Hall effect measurements after annealing at 400°C for 60 s. It has been shown that the sheet number increases with beam current across the investigated range with electrical activation being 76% higher at 6.4 mA as compared to 0.4mA. However, at 6.4 mA, the electrically active fraction remained low at 11.4%. Structural characterization revealed that the implanted region remained crystalline and amorphization is not able to explain the increased activation. The results suggest the presence of a stable B:Ge cluster whose formation is altered by point defect recombination during high flux implantation which results in increased B activation. © The Electrochemical Society.
- Published
- 2012