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The main goal of this program was to design fabricate and test a semiconductor device capable of demonstrating the fundamental physics required for the realization of a spin-coherent single photon transmitter/receiver system. These requirements included careful tailoring of the g factor for conduction band electrons in the InGaAs/InP materials system and the confinement detection and manipulation of single electrons under lithographically defined gates In this final report we will describe our major accomplishments., The original document contains color images.

Growth kinetics and thermodynamic equilibrium can both be determining factors at different stages of III-V semiconductor heteroepitaxy. We study their interplay, employing kinetic Monte Carlo simulations for the InAs(001) surface. The simulation contains atomistic details of both species, including the stability of different reconstructions and their kinetics. The behavior of the surface in thermodynamic equilibrium, including different reconstructions, is determined exclusively by extensive total energy calculations employing ab initio density functional theory. The continuous phase transition between the alpha 2(2 x 4) and beta 2(2 x 4), predicted by theory, is confirmed by experiment. At full layer coverage, a recovery of the stable reconstruction is observed. The different time scales associated with As2 and In are discussed with respect to equilibrium and kinetics., Pub in: Materials Research Society Symposium Proceedings, Volume 692. This article is from ADA405047 Progress in Semiconductor Materials for Optoelectronic Applications Symposium held in Boston, Massachusetts on November 26-29, 2001.

The exploding market of information technology requires ultra-high-speed integrated circuits, which imposes formidable challenges in terms of nanofabrication, advanced materials, atomic scale measurements and modeling. The enormous costs of next-generation lithographic machines to mass produce integrated circuits with sub-100 nm resolution justify alternative approaches where the use of advanced materials and techniques for nanofabrication including epitaxial growth, and their powerful modeling, can lead to more cost-effective strategies. This volume contains most of the papers that were presented during Symposium J, "Advanced Materials and Techniques for Nanolithography," and Symposium N, "Atomic Scale Measurements and Atomistic Models of Epitaxial Growth and Lithography," at the 1999 MRS Fall Meeting in Boston, Massachusetts. Because of the complementary nature of the two subject matters, particularly in their applicability to device nanofabrication, it was felt that a combined proceedings volume offered the best way to present the findings in a unified and comprehensive manner. The editors trust that the reader will find here a nice overview of the state of the art, both theoretical and experimental, as well as an indication of the future trends and remaining challenges in this technologically important field.