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Modifications of magnetic and magneto-optical properties of Pt/Co(dCo)/Pt upon Ar+ irradiation (with energy 1.2, 5 and 30 keV) and fluence, F at the range from 2e13-2e16 Ar+/cm^2) were studied. Two ‘branches’ of increased perpendicular magnetic anisotropy (PMA) and enhanced magneto-optical response are found on two-dimensional (dCo, F) diagrams. The difference in F between ‘branches’ is driven by ion energy. Structural features correlated with magnetic properties have been analysed thoroughly by X-ray diffraction, Rutherford backscattering spectrometry and positron annihilation spectroscopy. Experimental results are in agreement with TRIDYN numerical calculations of irradiation-induced layers intermixing. Our work discusses particularly structural factors related to crystal lattice defects and strain, created and modified by irradiation, co-responsible for the increase in PMA.

This paper reports on structural and magnetic properties changes that occur after irradiation of Fe/Pt (1 1 1) multilayers with Ne+ ions. Multilayer samples of Al2O3 (0 0 0 1)/Pt 100 Å/(Fe X Å/Pt X Å)n/Pt 100 Å structure with different individual layer thickness X (5 or 10 Å) and different number of bilayers n (5, 10 or 15) were irradiated with Ne+ ions of 10 to 25 keV energy and 1 × 1014 ÷ 1 × 1016 ions cm−2 dose range at room temperature. Irradiation parameters were estimated a priori using Tridyn software. As-deposited samples revealed presence of sharp interfaces. Structural properties changes were investigated using symmetrical and asymmetrical X-ray diffraction methods and magnetic properties changes were examined using vibrating sample magnetometer. Ion beam induced mixing of multilayers resulted in formation of disordered face centered cubic (fcc) FePt alloys of two different compositions (quasi-50:50 in the initial multilayer volume and Pt-rich in initial cover-layer volume). Non-regular changes in magnetic properties after ion irradiation were observed whilst retaining in-plane orientation of magnetization easy axis.

We report on the growth of monocrystalline thin films of ZnSe and ZnO by atomic layer epitaxy by simple reaction between elemental precursors. Structural and optical properties of these films are discussed with reference to the investigations performed with atomic force microscopy, scanning electron microscopy, cathodoluminescence and photoluminescence. © 2004 Elsevier Ltd. All rights reserved.

We report on the growth of monocrystalline thin films of ZnSe and ZnO by atomic layer epitaxy by simple reaction between elemental precursors. Structural and optical properties of these films are discussed with reference to the investigations performed with atomic force microscopy, scanning electron microscopy, cathodoluminescence and photoluminescence. © 2004 Elsevier Ltd. All rights reserved.

Thin films of sphalerite-type ZnSe were grown by atomic layer deposition (ALD) from elemental Zn and Se precursors. These films, grown on various substrates, show bright blue 'edge' emission accompanied by donor-acceptor pair emissions in the blue, green and red spectral regions. Red, green and blue emissions mixed together give a white color, with a color temperature between 2400 and 4500 K depending on a layer thickness and temperature. ZnSe grown by ALD is in consequence a promising material for the fabrication of semiconductor-based white light emitting thin film electroluminescence displays. © 2003 Elsevier B.V. All rights reserved.

Thin films of sphalerite-type ZnSe were grown by atomic layer deposition (ALD) from elemental Zn and Se precursors. These films, grown on various substrates, show bright blue 'edge' emission accompanied by donor-acceptor pair emissions in the blue, green and red spectral regions. Red, green and blue emissions mixed together give a white color, with a color temperature between 2400 and 4500 K depending on a layer thickness and temperature. ZnSe grown by ALD is in consequence a promising material for the fabrication of semiconductor-based white light emitting thin film electroluminescence displays. © 2003 Elsevier B.V. All rights reserved.

We discuss light emission properties from thin films of ZnSe grown by atomic layer epitaxy on GaAs (100). White color emission is observed in photoluminescence and cathodoluminescence, due to the observation of three RGB emission bands. We demonstrate possibility of color tuning by either variation of film thickness or, in cathodoluminescence experiments, variation of an accelerating voltage. © 2002 Elsevier Science B.V. All rights reserved.

We discuss light emission properties from thin films of ZnSe grown by atomic layer epitaxy on GaAs (100). White color emission is observed in photoluminescence and cathodoluminescence, due to the observation of three RGB emission bands. We demonstrate possibility of color tuning by either variation of film thickness or, in cathodoluminescence experiments, variation of an accelerating voltage. © 2002 Elsevier Science B.V. All rights reserved.