1. Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays
- Author
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Hutin, L., Bertrand, B., Chanrion, E., Bohuslavskyi, H., Ansaloni, F., Yang, T. Y., Michniewicz, J., Niegemann, D. J., Spence, C., Lundberg, T., Chatterjee, A., Crippa, A., Li, J., Maurand, R., Jehl, X., Sanquer, M., Gonzalez-Zalba, M. F., Kuemmeth, F., Niquet, Y. M., De Franceschi, S., Urdampilleta, M., Meunier, T., Vinet, M., Hutin, L., Bertrand, B., Chanrion, E., Bohuslavskyi, H., Ansaloni, F., Yang, T. Y., Michniewicz, J., Niegemann, D. J., Spence, C., Lundberg, T., Chatterjee, A., Crippa, A., Li, J., Maurand, R., Jehl, X., Sanquer, M., Gonzalez-Zalba, M. F., Kuemmeth, F., Niquet, Y. M., De Franceschi, S., Urdampilleta, M., Meunier, T., and Vinet, M.
- Abstract
We fabricated linear arrangements of multiple split-gate devices along an SOI mesa, thus forming a 2×N array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spin-dependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundry-compatible Si MOS spin qubits.
- Published
- 2019