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This book is devoted to fast the evolving field of modern material science and nanoelectronics, and more particularly to physics and technology of functional nanomaterials and devices. The book focuses on nanodevices for electronics, sensors, and energy harvesting, considering as main device structure—the semiconductor-on-insulator (SemOI) one. The book reports the recent achievements in this field from leading companies and universities in Europe, Russia, and Ukraine. It is articulated around four main topics: (1) Nanoscale CMOS materials and devices; (2) Beyond CMOS materials, devices and their diagnostics; (3) New functional nanomaterials and nanoscaled devices for energy harvesting, light emission, optoelectronics and THz range: (4) NanoSensors and MEMS/NEMS. Part I is focused on new SemOI materials for More Moore and More-than-Moore applications. Ultrathin silicon SOI structures are necessary for production of fully depleted SOI devices of the 22 nm technology node and beyond. The materials innovation for RF electronics, Si-based photonics, and 3D integration are presented. Device solutions for very low-energy computing, high-performed tunnel FETs, 3D nanowire RAM cells, and mechanical flexible CMOS devices on plastics are described. Part II of the Book deals with the physics of novel ‘‘beyond CMOS’’ devices such as IR memory cells on basis of Si/Ge nanoheterostructures, nonvolatile memory based on graphene on ferroelectric substrate, Si spintronic devices and the AFM diagnostics for different functional nanostructurated material and devices. In Part III, we focus on functional nanomaterials and structures regarding self-powered systems, solar energy harvesting structures, and THz electronics. Also nanocomposite dielectric materials for light-emitting materials and other optoelectronics applications are also discussed. Part IV considers the application of SemOI nanowire structures for radiation sensors, biosensors, chemical sensors, and MEMS. The use of SemOI s

This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future - in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling. The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.