1. Dielectric behaviour of ferroelectrics at terahertz frequency
- Author
-
Zhang, Man
- Abstract
Ferroelectric materials are widely used in different applications which are related to their dielectric properties. While dielectric properties of ferroelectric materials at radio frequencies are largely explored, only a few attempts have been made to use THz radiation to research ferroelectrics to understand their high frequency dielectric behaviour and to accelerate the discovery of new applications of ferroelectrics. Here, ferroelectrics with different structures and applications are selected to research their dielectric behaviour at THz band. The selected materials are Bi0.5Na0.5TiO3; Aurivillius phase ABi2Nb2O9 (A=Ca or Ba), Dion Jacobson phase RbBi2Ti2NbO10 and La2Ti2O7, which are good for energy storage, memory application, photocatalytic and piezoelectric sensors, respectively. In particular, high intensity THz pump and low intensity THz probe were used to study the polarization dynamics Bi0.5Na0.5TiO3 ceramic. The high-energy THz pulses induced an ultrafast field-induced phase transition from a weakly polar phase (Cc) to a strongly polar phase (R3c) within 20 ps at 200 K in Bi0.5Na0.5TiO3, which opens a possibility to develop devices with ultrafast switching behaviour. Dielectric properties of unpoled and poled ABi2Nb2O9 show that the dynamics of domain walls are different at kHz and THz frequencies. At low frequencies, domain walls work as a group to increase dielectric permittivity. At THz frequencies, the defective nature of domain walls serves to lower the overall dielectric permittivity, which directly leads a demonstration on dielectric switching memory concept at THz. The similar physical mechanism of domain walls was further confirmed in RbBi2Ti2NbO10 which shows interesting photocatalytic behaviour due to its ferroelectric nature and incorporated tungsten carbide (WC) co-catalyst. Dielectric properties of La2Ti2O7 single crystal were also characterized from 1 kHz to 1 THz along one single direction. The decrease in dielectric permittivity with increasing frequency is related to dielectric relaxation from radio frequency to microwave then to terahertz band.
- Published
- 2021