Recently, resistive switching devices have emerged as promising candidates for next generation non-volatile memory and neuromorphic computing applications. In general, resistive switching device consists of a two-terminal metal-insulator-metal structure, in which metal oxide is widely employed as the insulator. Among a variety of metal oxides, SrTiO3 has attracted extensive attention owing to its superior physical and chemical properties. In this dissertation, novel SrTiO3 resistive switching devices through solution processed approaches have been developed and their electrical properties are tuned through engineering the defects and interfaces. The thesis includes the following parts: (1) Specific cation doping is utilized to modulate the electrical properties of SrTiO3 nanoparticles film. In Cr-doped SrTiO3 device, oxygen vacancies are induced since the Ti4+ is partly replaced by Cr3+, leading to reversible hysteresis loops upon application of voltage, while negligible resistance change is observed in the undoped device. (2) By insertion of a reduced graphene oxide layer between SrTiO3 and the bottom electrode, a transition from digital switching to analog switching is demonstrated. Typical potentiation and depression behaviours are implemented towards neuromorphic computing applications. (3) To explore the potential applications of silver nanowires as electrodes and artificial filaments, controlled fragmentation of silver nanowires has been realized through ultraviolet (UV)/ozone irradiation and a low-temperature annealing process. Based on the fragmented silver nanowire network, the device exhibits a reliable threshold switching effect with a selectivity of 5 × 105. (4) A facile sol-precipitation method is introduced to prepare SrTiO3 nanocubes and thin films. Using silver top electrode deposited by ink-jet printing, the device shows a typical bipolar switching behaviour. After deposition of silver nanowires onto the bottom electrode, unipolar switching with a high on/off ratio (~105) is demonstrated. This work provides facile and cost-effective solution-based methods to fabricate SrTiO3 devices for potential resistive switching applications. Meanwhile, the systematic study on modification of switching behaviour of SrTiO3 devices may give a better understanding of switching mechanism and offer ways to improve the device performance.