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Ge thin film was deposited by E-beam evaporation process at different chamber pressure with fixed gun power at room temperature. Film structure, stress, surface roughness and deposition rate were investigated using TEM, FSM 128 thin film stress system and Veeco Atomic Force Microscopy (AFM). The results show that room temperature evaporated Ge thin film indicated tensile stress, stress decreased as chamber pressure decreased. Film deposition rate increased as chamber pressure decreased. On the other hand, Ge film surface became smooth when it was evaporated at low chamber pressure. TEM analysis reveals that the formation of smooth surface was due to Ge thin film becomes denser at low chamber pressure and high deposition rate. [ABSTRACT FROM PUBLISHER]