192 results on '"Wakabayashi, H."'
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2. Modeling and Simulation of Si IGBTs
3. Formation of Ferroelectric Y-doped HfO2 though Atomic Layer Deposition and Low Temperature Post Annealing
4. Interface engineering of BEOL compatible ferroelectric Y:HfO2 device for enhanced endurance
5. Switching of 3300V Scaled IGBT by 5V Gate Drive
6. Endurance Improvement in Ferroelectric Y-doped HfO2 Thin Films on NiSi2 with Low-Thermal Budget Processing
7. Self-Heating-Aware Cell Design for Multi-Stacked Circuits with p/n-Vertically-Integrated Nanowires on FinFET
8. Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration
9. Vertical Bipolar Transistor Test Structure for Measuring Minority Carrier Lifetime in IGBTs
10. Charge and Discharge Characteristics of On-chip CeOx Electric Double Layer Decoupling Capacitors
11. Atomic Sites of Dopants in Si Visualized by Spectro-Photoelectron Holography
12. Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately
13. New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment
14. AB0767 Efficacy of subcutaneous tocilizumab in patients with rheumatoid arthritis and systemic sclerosis overlap syndrome
15. Photovoltaic properties of lateral ultra-thin Si p-i-n structure
16. Characterization of β-Ga2O3 Schottky barrier diodes
17. An experimental CMOS photon detector with 0.5e-RMS temporal noise and 15μm pitch active sensor pixels
18. 3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat)
19. Demonstration of Reduction in Vce (sat) of IGBT based on a 3D Scaling Principle
20. Conductance control by tunneling-barrier thickness optimizations in Fe/Al2O3/MoS2 structure
21. Back-gate effect on p-channel GaN MOSFETs on Polarization-Junction Substrate
22. Formation of Mo2C electrodes using stacked sputtering process for thermally stable SiC Schottky barrier diodes
23. Low temperature ohmic contact for p-type GaN using Mg electrodes
24. Precise outdoor PV performance measurements at various irradiance levels
25. FRI0566 Teriparatide and alendronate improved bone loss and hyperalgesia in a mouse model of osteoporosis
26. Photovoltaic Characteristics of Ultra-Thin Single Crystalline Silicon Solar Cells
27. Experimental verification of a 3D scaling principle for low Vce(sat) IGBT
28. High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Low-Temperature Forming-Gas Annealing for 3D-IC
29. Noise Analysis of a Serial Multiple Sampling in Back-Illuminated CMOS Image Sensor
30. Centimeter-scale High-performance Few-layer MoS2 Fabricated by RF Magnetron Sputtering and Subsequent Post-deposition Annealing
31. Precise outdoor PV performance measurements at various irradiance levels
32. An extraction method of charge trapping site distribution in AlGaN layer in GaN HEMT
33. Improving Crystalline Quality of Sputtering Deposited MoS2 Thin Film by Post-Sulfurization Annealing Using (t-C4H9)2S2
34. Influence of sputtering gas on resistivity of thin Ni silicide films
35. An investigation of CeO2 based ReRAM with p+ and n+-Si bottom electrodes
36. Enhanced oxidation of sic substrates using La2O3 capped annealing and a proposal for uniform LaSiON gate dielectric formation
37. Dependence of Ti/C ratio on Ohmic contact with tic electrode for AlGaN/GaN structure
38. Passivation of SiO2/SiC interface with La2O3 capped oxidation
39. Multi-Layered MoS2 Thin Film Formed by High-Temperature Sputtering for Enhancement-Mode nMOSFETs
40. Low Dit high-k/In0.53Ga0.47As gate stack, with CET down to 0.73 nm and thermally stable silicide contact by suppression of interfacial reaction
41. Evaluation of Sputtering Deposited 2-Dimensional MoS2 Film by Raman Spectroscopy.
42. An ohmic contact process for AlGaN/GaN structures using TiSi2 electrodes
43. Scalable La-silicate Gate Dielectric on InGaAs Substrate with High Thermal Stability and Low Interface State Density
44. Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT
45. Situational map integration of dose distribution on the ground surface using Unmanned Aerial Vehicles
46. A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidization of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer
47. Inhibition of Calcitonin Gene-Related Peptide and Insulin-Like Growth Factor: A Potential New Therapeutic Strategy To Reduce Bone Pain in Bone Metastases of Breast Cancer.
48. Channel Strain Analysis in High Performance Damascene-gate pMOSFETs by High Spatial Resolution Raman Spectroscopy
49. Stress-enhancement technique in narrowing NMOSFETs with damascene-gate process and tensile liner
50. Stress enhancement concept on replacement gate technology with top-cut stress liner for nFETs
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