Search

Your search keyword '"Voelskow, M."' showing total 14 results
Start Over Author "Voelskow, M." Publication Type Conference Materials
14 results on '"Voelskow, M."'

1. Millisecond processing beyond chip technology: From electronics to photonics

Author

Skorupa, W., primary, Anwand, W., additional, Posselt, M., additional, Prucnal, S., additional, Rebohle, L., additional, Voelskow, M., additional, Zhou, S., additional, McMahon, R. A., additional, Smith, M., additional, Gebel, T., additional, Hentsch, W., additional, Fendler, R., additional, Luthge, T., additional, Satta, A., additional, Borseth, T. Moe, additional, Kuznetsov, A. Yu., additional, and Svensson, B.G., additional

Published
2007
Full Text
View/download PDF

3. CONDUCTIVITY TYPE AND CRYSTAL ORIENTATION OF GaAs NANOCRYSTALS IN SILICON.

Author

Prucnal, S., Voelskow, M., Mücklich, A., Liedke, M. O., Pyszniak, K., Drozdziel, A., Turek, M., Zuk, J., and Skorupa, W.

Subjects
NANOCRYSTALS, SEMICONDUCTORS, SOLID state electronics, ION plating, OPTICAL properties, QUANTUM dots, ION implantation
Abstract

Semiconductors quantum dots (QDs) of the size of the exciton Bohr radius are attractive both for research and application. We present investigations of microstructural, electrical and optical properties of GaAs QDs formed in silicon. The GaAs QDs were obtained by sequential ion implantation and flash lamp annealing (FLA). The crystallographic orientation of nanocrystals (NCs) and their size can be controlled by annealing parameters. Besides the orientation, the conductivity type of the GaAs NCs can be controlled. The influence of the post implantation millisecond-range annealing on the evolution of the NCs size, shape, orientation and doping type of GaAs QDs is discussed. [ABSTRACT FROM AUTHOR]

Published
2012

4. FLASH LAMP PROCESSING OF III/V NANOSTRUCTURES IN SILICON.

Author

Turek, M., Prucnal, S., Voelskow, M., Mücklich, A., Liedke, M. O., Pyszniak, K., Drozdziel, A., Zuk, J., and Skorupa, W.

Subjects
NANOSTRUCTURES, SPECTRUM analysis, NANOCRYSTALS, SILICON, TRANSMISSION electron microscopy, ION implantation
Abstract

An alternative technique to the epitaxial growth of III-V nanostructures, enabling their integration with Si, is the high fluence ion implantation followed by milliseconds annealing. In the paper formation of the InAs, GaAs and InP nanocrystals in Si is shown. The optoelectronic and microstructural properties of the nanostructures were investigated by μ-Raman and photoluminescence spectroscopy, X-ray diffraction, highresolution transmission electron microscopy and energy-dispersive X-ray spectroscopy. Conductivity type, size and crystallographic orientation of the III-V nanostructures can be controlled by varying implantation and annealing parameters. [ABSTRACT FROM AUTHOR]

Published
2012

Catalog

Books, media, physical & digital resources
See catalog results