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3. A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

4. FINFET technology featuring high mobility SiGe channel for 10nm and beyond

5. 10nm FINFET technology for low power and high performance applications

6. A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI

7. Comprehensive study of effective current variability and MOSFET parameter correlations in 14nm multi-fin SOI FINFETs

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