72 results on '"Tanigawa, T."'
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2. 25 nm iPMA-type Hexa-MTJ with solder reflow capability and endurance > 107 for eFlash-type MRAM
3. Design and Heavy-Ion Testing of MTJ/CMOS Hybrid LSIs for Space-Grade Soft-Error Reliability
4. 391 Positive surgical margin is an independent predictor of overall survival of patients with vulvar squamous carcinoma
5. Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage
6. Scalability of Quad Interface p-MTJ for 1× nm STT-MRAM with 10 ns Low Power Write Operation, 10 Years Retention and Endurance > 1011
7. First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400°C thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology
8. Novel Quad interface MTJ technology and its first demonstration with high thermal stability and switching efficiency for STT-MRAM beyond 2Xnm
9. PREDICTORS OF FAILURE OF EN BLOC RESECTION OR PERFORATION IN ENDOSCOPIC SUBMUCOSAL DISSECTION FOR ESOPHAGEAL NEOPLASIA
10. 14ns write speed 128Mb density Embedded STT-MRAM with endurance>1010 and 10yrs retention@85°C using novel low damage MTJ integration process
11. 1375 Association between age-stratified obstructive sleep apnea syndrome and obesity
12. High thermal tolerance synthetic ferrimagnetic reference layer with modified buffer layer by ion irradiation for perpendicular anisotropy magnetic tunnel junctions.
13. Impact of sputtering condition for tungsten on magnetic and transport properties of magnetic tunneling junction with CoFeB/W/CoFeB free layer
14. 10 nm\phi perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400°C high thermal tolerance by boron diffusion control
15. Ultra-Broadband Spectral-Shifted Pulse Pair Generation by Amplitude Modulation for Single Attosecond Pulse Characterization Using the SPIDER Method
16. Comparison between monocycle and two-cycle pumpings for the high-order harmonic attosecond-pulse generation
17. Simulation and experiment of ultraviolet pumped optical parametric amplification with two photon absorption and pump focusing effect
18. Liquid Crystal Spatial Light Modulator for Arbitrary Amplitude Modulation from Ultraviolet to Near-infrared
19. Optical parametric amplification of optical pulses with a nearly one-octave bandwidth from a hollow fiber
20. Device Technology for embedded DRAM utilizing stacked MIM(Metal-Insulator-Metal) Capacitor
21. Overview and Future Challenges eDRAM Technologies
22. High-speed 850 nm AlGaAs/GaAs vertical cavity surface emitting laser with low parasitic capacitance fabricated using BCB planarization technique
23. PRODUCTION OF HARD CARBONS FOR LITHIUM ION STORAGE BY THE CO-CARBONIZATION OF PHENOLIC RESIN PRECURSORS
24. High-Throughput Screening of Flux Materials for Single Crystal Growth by Combinatorial Pulsed Laser Deposition.
25. Silicide-Extension Technology for High-Density Embedded SRAM Cells in 0.18um-CMOS Generation and Beyond
26. A 2.9 /spl mu/m/sup 2/ embedded SRAM cell with co-salicide direct-strap technology for 0.18 /spl mu/m high performance CMOS logic.
27. A salicide-bridged trench capacitor with a double-sacrificial-Si/sub 3/N/sub 4/-sidewall (DSS) for high-performance logic-embedded DRAMs.
28. Shared tungsten structures for FEOL/BEOL compatibility in logic-friendly merged DRAM.
29. A 1.9-/spl mu/m/sup 2/ loadless CMOS four-transistor SRAM cell in a 0.18-/spl mu/m logic technology.
30. Multiple-thickness gate oxide and dual-gate technologies for high-performance logic-embedded DRAMs.
31. Ultra-thin TiN/Ta/sub 2/O/sub 5W capacitor technology for 1 Gbit DRAM.
32. Control and synchronization scheme for parallel image processing RAM with 128 processor elements and 16-Mb DRAM.
33. Stock price pattern recognition-a recurrent neural network approach
34. A salicide-bridged trench capacitor with a double-sacrificial-Si/sub 3/N/sub 4/-sidewall (DSS) for high-performance logic-embedded DRAMs
35. Shared tungsten structures for FEOL/BEOL compatibility in logic-friendly merged DRAM
36. A 2.9 μm/sup 2/ embedded SRAM cell with co-salicide direct-strap technology for 0.18 μm high performance CMOS logic
37. A 1.9-μm/sup 2/ loadless CMOS four-transistor SRAM cell in a 0.18-μm logic technology
38. Remarks on real-time human posture estimation from silhouette image using neural network
39. Stock price pattern matching system-dynamic programming neural networks approach
40. A 7.68 GIPS 3.84 GB/s 1W parallel image processing RAM integrating a 16 Mb DRAM and 128 processors
41. Ultra-broadband spectral-shifted pulse pair generation by amplitude modulation for single attosecond pulse characterization using the SPIDER method.
42. Enhanced responsivity in a novel AlGaN / GaN plasmon-resonant terahertz detector using gate-dipole antenna with parasitic elements.
43. Liquid crystal spatial light modulator for arbitrary amplitude modulation from ultraviolet to near-infrared.
44. AlGaN/GaN plasmon-resonant terahertz detectors with on-chip patch antennas.
45. Comparison between monocycle and two-cycle pumpings for the high-order harmonic attosecond-pulse generation.
46. Monocycle pulse generation and octave bandwidth amplification.
47. Complete characterization of high harmonic pulses by photoelectron spectral shearing interferometry.
48. Nearly-octave broadband, high-powered optical parametric amplification toward monocycle regime.
49. Surface Plasmon VCSEL with Metal Nanohole Arrays.
50. Temperature-Stable Operating Current of Surface Plasmon VCSELs with Metal Nanohole Arrays.
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