40 results on '"Stephan, Menzel"'
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2. Realization of Reading-based Ternary Łukasiewicz Logic using Memristive Devices.
3. Realization of Ternary Łukasiewicz Logic using BiFeO3-based Memristive Devices.
4. Devices and Architectures for Efficient Computing In-Memory (CIM) Design.
5. Physical modeling and design rules of analog Conductive Metal Oxide-HfO2 ReRAM.
6. Eliminating Capacitive Sneak Paths in Associative Capacitive Networks based on Complementary Resistive Switches for In-Memory Computing.
7. A Simplified Variability-Aware VCM Memristor Model for Efficient Circuit Simulation.
8. Design and Analysis of Isolated Voltage-Mode Memristor Cellular Nonlinear Network Cells.
9. Design Limitations in Oxide-Based Memristive Ternary Content Addressable Memories.
10. Exploration of Bistable Oscillatory Dynamics in a Memristor from Forschungszentrum Jülich.
11. Experimental Verification of Uncoupled Memristive Cellular Nonlinear Network by Processing the EDGE Detection Task.
12. Exploring Multi-Valued Logic and its Application in Emerging Post-CMOS Technologies.
13. A failure analysis framework of ReRAM In-Memory Logic operations.
14. Analysis of VMM Operations on 1S1R Crossbar Arrays and the Influence of Wire Resistances.
15. Performance Analysis of Memristive-CNN based on a VCM Device Model.
16. Experimental and Theoretical Analysis of Stateful Logic in Passive and Active Crossbar Arrays for Computation-in-Memory.
17. Realization of Memristor-aided Logic Gates with Analog Memristive Devices.
18. Integration of Physics-Derived Memristor Models with Machine Learning Frameworks.
19. NEUROTEC I: Neuro-inspired Artificial Intelligence Technologies for the Electronics of the Future.
20. NeuroHammer: Inducing Bit-Flips in Memristive Crossbar Memories.
21. System Theory Enables a Deep Exploration of ReRAM Cells' Switching Phenomena.
22. Implementation of Multinary Łukasiewicz Logic Using Memristive Devices.
23. A Machine Learning Model for Predicting Fetal Hemoglobin Levels in Sickle Cell Disease Patients.
24. A Compact Model for the Electroforming Process of Memristive Devices.
25. Memristive Device Modeling and Circuit Design Exploration for Computation-in-Memory.
26. Requirements and Challenges for Modelling Redox-based Memristive Devices.
27. The influence of interfacial (sub)oxide layers on the properties of pristine resistive switching devices.
28. Atomistic Investigation of the Schottky Contact Conductance Limits at SrTiO3 based Resistive Switching Devices.
29. On the origin of the fading memory effect in ReRAMs.
30. Thermal effects on the I-V characteristics of filamentary VCM based ReRAM-cells using a nanometer-sized heater.
31. Kinetic Monte Carlo modeling of the charge transport in a HfO2-based ReRAM with a rough anode.
32. Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices.
33. Lowering forming voltage and forming-free behavior of Ta2O5 ReRAM devices.
34. Efficient implementation of multiplexer and priority multiplexer using 1S1R ReRAM crossbar arrays.
35. In-memory adder functionality in 1S1R arrays.
36. Controllability of multi-level states in memristive device models using a transistor as current compliance during SET operation.
37. Modeling and simulation of electrochemical metallization memory cells.
38. Simulation of TaOx-based complementary resistive switches by a physics-based memristive model.
39. Recent progress in redox-based resistive switching.
40. Proceedings of the 18th ACM International Symposium on Nanoscale Architectures, NANOARCH 2023, Dresden, Germany, December 18-20, 2023
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