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Your search keyword '"Shin, C. S."' showing total 11 results
Start Over Author "Shin, C. S." Publication Type Conference Materials
11 results on '"Shin, C. S."'

1. Lg = 60 nm In0.53 Ga0.47 As MBCFETs: From gm_max = 13.7 mS/üm and Q = 180 to virtual-source modeling

Author

Yoo, J.-H., primary, Jo, H.-B., additional, Lee, I.-G., additional, Choi, S.-M., additional, Baek, J.-M., additional, Lee, S T., additional, Jang, H., additional, Kong, M W., additional, Kim, H H., additional, Lee, H J., additional, Kim, H.-J., additional, Jeong, H.-S., additional, Park, W.-S., additional, Ko, D H., additional, Shin, S. H., additional, Kwon, H.-M., additional, Kim, S K., additional, Kim, J G., additional, Yun, J., additional, Kim, T., additional, Shin, K.-Y., additional, Kim, T.-W., additional, Shin, J.-K., additional, Lee, J.-H., additional, Shin, C.-S., additional, Seo, K.-S., additional, and Kim, D.-H., additional

Published
2023
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2. Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets

Author

Jo, H. -B., primary, Lee, I.-G., additional, Baek, J. -M., additional, Lee, S. T., additional, Choi, S. -M., additional, Kim, H.-J., additional, Jeong, H. -S., additional, Park, W.-S., additional, Yoo, J. -H., additional, Lee, H.-Y., additional, Yun, D. Y., additional, Son, SW., additional, Ko, D.-H., additional, Kim, T.-W., additional, Kwon, H. -M., additional, Kim, S.-K., additional, Kim, J. G., additional, Yun, J., additional, Kim, T., additional, Lee, J H., additional, Lee, J.-H., additional, Shin, C. -S., additional, Seo, K. -S., additional, and Kim, D. -H., additional

Published
2022
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3. High-performance III–V devices for future logic applications

Author

Kim, D.-H., primary, Kim, T.-W., additional, Baek, RH., additional, Kirsch, P. D., additional, Maszara, W., additional, del Alamo, J. A., additional, Antoniadis, D. A., additional, Urteaga, M., additional, Brar, B., additional, Kwon, HM., additional, Shin, C.-S., additional, Park, W.-K., additional, Cho, Y.-D., additional, Shin, SH., additional, Ko, DH., additional, and Seo, K.-S., additional

Published
2014
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10. Electromigration in epitaxial Cu(001) lines.

Author

Ramanath, G., Kim, H., Goindi, H. S., Frederick, M. J., Shin, C.-S., Goswami, R., Petrov, I., and Greene, J. E.

Subjects
ELECTRODIFFUSION, THIN films
Abstract

We report the electromigration (EM) response of single-domain epitaxial Cu(001) lines on layers of Ta, TaN, and TiN. Epitaxial Cu(001) lines on nitride layers exhibit nearly two orders of magnitude higher mean-time-to-failure (MTTF) values than those on Ta, indicating the strong influence of the underlayer. The activation energy of EM for Cu on the nitrides is ∼0.8–1.2 eV, and that of Cu on Ta is ∼0.2 eV, for 200–300 °C. Our results also indicate that the MTTF values correlate inversely to the crystal quality of the Cu layers measured by X-ray diffraction. The EM resistance of epitaxial Cu lines with different crystal quality on TaN were measured to separate the effects of interface chemistry and crystal quality. While higher quality epitaxial films reveal a higher EM resistance, the magnitude of the change is smaller than that obtained by changing the interface chemistry. Epitaxial lines exhibit more than 3–4 orders of magnitude higher MTTF than polycrystalline lines on the same underlayer. Based upon our results, we propose that the Cu/underlayer interface chemistry and presence of grain boundary diffusion play important roles in unpassivated Cu films. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2002

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