39 results on '"Sampedro, C."'
Search Results
2. 3D multi-subband ensemble Monte Carlo simulation of 〈100〉 and 〈110〉 Si nanowire FETs
3. MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections
4. Gate-induced vs. implanted body doping impact on Z2-FET DC operation
5. Three-dimensional multi-subband simulation of scaled FinFETs
6. Multi-subband ensemble Monte Carlo study of tunneling leakage mechanisms
7. Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo
8. Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs
9. Multi-subband ensemble Monte Carlo study of band-to-band tunneling in silicon-based TFETs
10. Confinement orientation effects in S/D tunneling
11. Impact of S/D tunneling in ultrascaled devices, a Multi-Subband Ensemble Monte Carlo study
12. Sub-22nm scaling of UTB2SOI devices for Multi-Vt applications
13. Impact of non uniform strain configuration on transport properties for FD14+ devices
14. 3D multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors
15. Impact of S/D tunneling in ultrascaled devices, a Multi-Subband Ensemble Monte Carlo study.
16. Non-parabolicity in Si-(110) nMOSFETs: Analytic and numerical results for the two-band k · p model
17. Analytical drain current model using temperature dependence model in nanoscale Double-Gate (DG) MOSFETs
18. Combined effect of mechanical stressors and channel orientation on mobility in FDSOI n and p MOSFETs
19. Analytical drain current model reproducing advanced transport models in nanoscale double-gate (DG) MOSFETs
20. Comparison of semiclassical transport formulations including quantum corrections for advanced devices with High-K gate stacks
21. Quantization effects in silicided and metal gate MOSFETs
22. Accurate Simulation of the Electron Density of Surrounding Gate Transistors
23. A new inversion charge centroid model for surrounding gate transistors with HfO2 as gate insulator
24. Using Grid Infrastructures for a Stationary DGSOI Monte Carlo Simulation
25. Quantum corrected EMC simulation of ultrashort DGSOI devices. Ballistic vs. Diffusive regime
26. Study of the Corner Effects on Pi-Gate SOI MOSFETs
27. Quantum corrected Ensemble Monte Carlo simulation of UTB-DGSOI. Contribution of Volume Inversion and Inter-Subband Modulation effects
28. Electron transport in silicon inversion slabs of nanometric thickness
29. Analytical drain current model reproducing advanced transport models in nanoscale double-gate (DG) MOSFETs.
30. Multi-Subband Monte Carlo simulation of bulk MOSFETs for the 32nm-node and beyond.
31. Quantum-Monte Carlo simulation of ultra-short DGSOI devices: A Multi-Subband approach.
32. Enhanced electron transport by carrier overshoot in ultrascaled Double Gate MOSFETs.
33. Electron transport in silicon inversion slabs of nanometric thickness.
34. Monte Carlo simulation of velocity modulation transistors.
35. DGSOI devices operated as velocity modulation transistors
36. Monte Carlo simulation of velocity modulation transistors
37. Ballisticity at very low drain bias in DG SOI Nano-MOSFETs.
38. Monte Carlo simulation of electron velocity overshoot in DGSOI MOSFETs.
39. DGSOI devices operated as velocity modulation transistors.
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