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12. Migrating from planar to FinFET for further CMOS scaling: SOI or bulk?

20. Co Active Electrode Enhances CBRAM Performance and Scaling Potential

26. Thermally stable integrated Se-based OTS selectors with >20 MA/cm2 current drive, >3.103 half-bias nonlinearity, tunable threshold voltage and excellent endurance

29. Advanced a-VMCO resistive switching memory through inner interface engineering with wide (>102) on/off window, tunable μA-range switching current and excellent variability

30. Retention, disturb and variability improvements enabled by local chemical-potential tuning and controlled Hour-Glass filament shape in a novel W\WO3\Al2O3\Cu CBRAM

43. Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopants

47. Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell

48. Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current

49. Copper through silicon via induced keep out zone for 10nm node bulk FinFET CMOS technology

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