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Start Over Author "Page, Matthew R." Publication Type Conference Materials
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2. Critical Interface: Poly-Silicon to Tunneling SiO2 for Passivated Contact Performance.

Author

Nemeth, Bill, Harvey, Steve P., Young, David L., Page, Matthew R., LaSalvia, Vincenzo, Findley, Dawn, Kale, Abhijit, Theingi, San, and Stradins, Paul

Subjects
SOLAR cells, ENVIRONMENTAL exposure, POLYCRYSTALLINE silicon, POLLUTANTS, PASSIVATION, TUNNEL design & construction
Abstract

Environmental exposure of our thin tunneling SiO2 layer on nCz wafer samples prior to poly-Silicon (poly-Si) deposition critically impacts the resulting contact passivation. We present ToF-SIMS evidence of SiO2 oxide storage-induced degradation, presumably by surface contaminants such as carbon, in symmetric and device poly-Si/SiO2 lifetime samples as well as in finished cells. We also present methods to resurrect a contaminated SiO2 layer, including UV-O3 treatment prior to passivated contact formation to produce >21% TCO-free solar cells. [ABSTRACT FROM AUTHOR]

Published
2019
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