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Semiconductors quantum dots (QDs) of the size of the exciton Bohr radius are attractive both for research and application. We present investigations of microstructural, electrical and optical properties of GaAs QDs formed in silicon. The GaAs QDs were obtained by sequential ion implantation and flash lamp annealing (FLA). The crystallographic orientation of nanocrystals (NCs) and their size can be controlled by annealing parameters. Besides the orientation, the conductivity type of the GaAs NCs can be controlled. The influence of the post implantation millisecond-range annealing on the evolution of the NCs size, shape, orientation and doping type of GaAs QDs is discussed. [ABSTRACT FROM AUTHOR]

An alternative technique to the epitaxial growth of III-V nanostructures, enabling their integration with Si, is the high fluence ion implantation followed by milliseconds annealing. In the paper formation of the InAs, GaAs and InP nanocrystals in Si is shown. The optoelectronic and microstructural properties of the nanostructures were investigated by μ-Raman and photoluminescence spectroscopy, X-ray diffraction, highresolution transmission electron microscopy and energy-dispersive X-ray spectroscopy. Conductivity type, size and crystallographic orientation of the III-V nanostructures can be controlled by varying implantation and annealing parameters. [ABSTRACT FROM AUTHOR]