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1. STT-MRAM Product Reliability and Cross-Talk

2. Extended MTJ TDDB Model, and Improved STT-MRAM Reliability With Reduced Circuit and Process Variabilities

3. JEDEC-Qualified Highly Reliable 22nm FD-SOI Embedded MRAM For Low-Power Industrial-Grade, and Extended Performance Towards Automotive-Grade-1 Applications

4. Advanced MTJ Stack Engineering of STT-MRAM to Realize High Speed Applications

5. Fast Switching of STT-MRAM to Realize High Speed Applications

6. A Reliable TDDB Lifetime Projection Model Verified Using 40Mb STT-MRAM Macro at Sub-ppm Failure Rate To Realize Unlimited Endurance for Cache Applications

7. Magnetic Immunity Guideline for Embedded MRAM Reliability to Realize Mass Production

20. The Scientific program with RIBRAS (Radioactive Ion Beams in Brasil)

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