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We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1−xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe grows predominantly in the (001) orientation on GaAs(111) and Bi2Se3, but along the (111) crystallographic direction on BaF2 (111) and Pb1−xEuxSe (111). High resolution transmission electron microscopy measurements reveal a sharp and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found a strong hysteresis of the antiferromagnetic–ferrimagnetic transition. The ability to grow epitaxial films of EuSe on Bi2Se3 and of Bi2Se3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator. [ABSTRACT FROM AUTHOR]

Topological surface-states can acquire an energy gap when time-reversal symmetry is broken by interfacing with a magnetic insulator. This gap has yet to be measured. Such topological-magnetic insulator heterostructures can host a quantized anomalous Hall effect and can allow the control of the magnetic state of the insulator in a spintronic device. In this work, we observe the energy gap of topological surface-states in proximity to a magnetic insulator using magnetooptical Landau level spectroscopy. We measure Pb1-xSnxSe–EuSe heterostructures grown by molecular beam epitaxy exhibiting a record mobility and low Fermi energy. Through temperature dependent measurements and theoretical calculations, we show this gap is likely due to quantum confinement and conclude that the magnetic proximity effect is weak in this system. This weakness is disadvantageous for the realization of the quantum anomalous Hall effect, but favorable for spintronic devices which require the preservation of spin-momentum locking at the Fermi level. The proximity coupling of topological insulators with magnetic materials can give rise to exotic phenomenon such as the quantum anomalous Hall effect. Here, the authors use magneto-optical Landau level spectroscopy to investigate Pb1-xSnxSe-EuSe heterostructures finding evidence of a quantum confinement induced energy gaps in the topological surface states, that overshadow the magnetic proximity effects. [ABSTRACT FROM AUTHOR]

The high-temperature compression creep of additive-free β/α silicon carbide ceramics fabricated by rapid hot pressing (RHP) was investigated. The creep tests were accomplished in vacuum at temperature range 1500 °C–1750 °C and compressive loads of 200 MPa to 400 MPa. Under investigated condition the RHP ceramics possessed the lowest creep rate reported in the literature. The observed strain rates changed from 2.5 × 10−9 s−1 at 1500 °C and a lowest load of 275 MPa to 1.05 × 10−7 s−1 at 1750 °C and a highest load of 400 MPa. The average creep activation energy and the stress exponent remain essentially constant along the whole range of investigated parameters and were 315 ± 20 kJ∙mol−1, and 2.22 ± 0.17, respectively. The suggested creep mechanism involves GB sliding accommodated by GB diffusion and β−α SiC phase transformation. [ABSTRACT FROM AUTHOR]

This report showcases a vertical tunnel field effect transistor (TFET) fabricated from a GaN/InGaN heterostructure and compares it to a gated vertical GaN p-n diode. By including a thin InGaN layer, the interband tunneling in the TFET is increased compared to the gated homojunction diode. This leads to an increased drain current of 57 μA/μm and a reduced subthreshold swing of 102 mV/dec, from 240 mV/dec. However, trap assisted tunneling prevents devices from realizing subthreshold slopes below the Boltzmann limit of 60 mV/dec. Nevertheless, this work shows the capability of tunnel field effect transistors to be realized in GaN by taking advantage of the spontaneous and piezoelectric polarization in the III-N material system. [ABSTRACT FROM AUTHOR]

Interactions of leukocytes with the vascular endothelium culminating in their diapedesis represent not only a crucial event in immune surveillance and defense but are also critically involved in the pathogenesis of many inflammatory diseases, including atherosclerosis. Our previous in vitro studies using atomic force microscopy measurement of monocyte-endothelial cell interaction have demonstrated that a cyclic arginine-glycine-aspartic acid peptide (cRGD) inhibited their adhesion through very late antigen (α4β1-integrin; VLA4)-vascular cell adhesion molecule-i by 60% with the IC50 = 100 nM. To elucidate the potential efficacy of this peptide in vivo in preventing atherogenesis, experiments were performed in apolipoprotein E (ApoE)-deficient (-/-) mice fed a Western diet and receiving chronic treatment with cRGD peptide for 2-4 wk. In addition, some animals were subjected to a temporary carotid artery ligation while receiving the above treatment. Formation of fatty streaks and infiltration of the vascular wall with macrophages were not affected by cRGD treatment. Infiltration of the carotid artery postligation was significantly reduced in the cRGD-treated animals, as was the lipid accumulation. Furthermore, cRGD-treated ApoE-/- mice exhibited significantly lesser macrophage infiltration and lipid accumulation in the kidneys, the site of the highest expression of VLA4, These data demonstrated that cRGD peptide is a potent inhibitor of monocyte/macrophage infiltration of the injured macrovasculature and of the renal microvasculature, where it results in the attenuation of lipid accumulation. Formation of fatty streaks in the aortic root was not inhibitable by this treatment. [ABSTRACT FROM AUTHOR]