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3. A Study of Adhesion and Improvement of Adhesion Energy Using Hybrid Low-k (porous-PAr/ porous-SiOC(k=2.3/2.3)) Structures with Multi-layered Cu Interconnects for 45-nm Node Devices

5. High Performance Ultra Low-k (k=2.0/keff=2.4)/Cu Dual-Damascene Interconnect Technology with Self-Formed MnSixOy Barrier Layer for 32 nm-node

8. High performance CMOSFET technology for 45nm generation and scalability of stress-induced mobility enhancement technique

39. 10J×10Hz Diode-Pumped Nd:Glass Slab Amplifier for Inertial Fusion Energy

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