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15. High performance In0.53Ga0.47As FinFETs fabricated on 300 mm Si substrate

19. In0.53Ga0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate

47. Assessment and choice of input for wide-area damping controller in large-scale PV taking time delay into consideration.

49. PRESSING INDUCED POLYMORPHIC PHASE TRANSITION IN SUBMICRON-SIZED GAMMA-HMX.

50. THE EVOLUTION OF SENSITIVITY IN HMX-BASED EXPLOSIVES DURING THE REVERSION FROM DELTA TO BETA PHASE.

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