1. Hydrogen Passivation Effect on p-Type Poly-Si/SiOx Stack for Crystalline Silicon Solar Cells.
- Author
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Lozac’h, Mickaël, Shota Nunomura, Hiroshi Umishio, Takuya Matsui, and Koji Matsubara
- Subjects
SILICON solar cells ,POLYCRYSTALLINE silicon ,SURFACE passivation ,ATOMIC layer deposition ,PASSIVATION ,HYDROGEN atom ,HYDROGEN plasmas - Abstract
Cyclic dehydrogenation-rehydrogenation (D-R) experiments are performed on thin oxide passivated contact (TOPCon) p-type poly-Si/SiO
x stack to investigate the role of hydrogen atoms for crystalline silicon solar cell. The dehydrogenation steps are performed by thermal annealing at 450 °C for 1h under vacuum condition, and the rehydrogenation steps by hydrogen plasma treatment (HPT) at 300 °C for 1min. The ultrathin SiOx layer of 0.8±0.1 nm is realized by atomic layer deposition (ALD) technique allowing a precise control at atomic scale. The effective lifetime is enhanced to 1.4 ms by the HPT. The D-R method underlines the contribution of H atoms to the c-Si surface passivation that diffuses into the SiOx /c-Si interface. Besides, the lifetime recovery is well described by a stretched exponential function that indicates the dispersive nature of the p-type poly-Si/SiOx stack. [ABSTRACT FROM AUTHOR]- Published
- 2019
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