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Indian Reduced Activation Ferritic Martensitic steel is irradiated with 1.1 MeV Fe ions to a dose of 0.1 dpa at room temperature. The positron annihilation study showed a decrease in S-parameter with annealing temperature due to vacancy annealing. A complete defect recovery is observed beyond 1073 K. The linear nature of (S, W) correlation plot shows that only one kind of defect is present throughout the annealing temperature. [ABSTRACT FROM AUTHOR]

Preliminary measurements on target temperature rise and gas emission were conducted during a 2-MeV proton irradiation to investigate the mechanism of the chemical state changes of phosphorus, sulfur, and chlorine during high-resolution WD-PIXE measurements. Sulfur and phosphorus targets were irradiated for approximately 1 hour using proton beams with a current density of 7.5 nA/mm2. Among the several chemical states present in each element, the Kα line shifts corresponding to oxidation due to the irradiation were observed for CaHPO3·H2O (P3+), and Na2SO3 (S4+) samples. For Ca(H2PO2)2 (P1+) and Na2S2O3 (S2-,6+) samples, spectral shapes of Kα X-ray changed during the irradiation. From the measured results on the temperature and gases, it was found that these chemical state changes accompanied emission of gaseous thermal decomposition products. During the change, sample temperature was measured to be as high as 200–400° C. [ABSTRACT FROM AUTHOR]

Precise surface processing of a silicon wafer was studied by using a gas cluster ion beam (GCIB). The damage caused to the silicon surface was strongly dependent on irradiation parameters. The extent of damage varied with the species of source gas and the acceleration voltage (Va) of cluster ions. It also varied with the cluster size and residual gas pressure. The influence of electron acceleration voltage (Ve) used for ionization of a neutral cluster was also investigated. The irradiation damage, such as an amorphous silicon (a-Si) layer, a mixed layer of a-Si and c-Si (transition layer), and surface roughness, was increased with Ve. It is suggested that the increase in the amount of energy per atom was induced by high Ve, because of variation of the cluster size and/or cluster charge. An undamaged smooth surface can be produced by Ar-GCIB irradiation at low Ve and Va. [ABSTRACT FROM AUTHOR]

Irradiation damage effects of the epoxy resin 648 and epoxy nano-composites were studied by exposing them to vacuum ultraviolet irradiation (VUV) with wavelength varying from 5 nm to 200 nm. Experimental results obtained from mass loss, Scanning Electron Microscopy (SEM) and X-ray Photoelectron Spectroscopy (XPS) show that nano-TiO2 particles provide better resistance performance. Epoxy nano-composite was found to be more advantageous over epoxy resin due to significant lower mass loss, lower flexural strength variation and the lower outgassing, with less gas component varieties after irradiation. In addition, now new carbon peaks were found and the principle components of the O ls peak did not change. [ABSTRACT FROM AUTHOR]