Author: "Huang-Siang Lan" / Publication Type: Conference Materials - Searchworks@Jio Institute Digital Library Search Results

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Start Over Author "Huang-Siang Lan" Publication Type Conference Materials

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1. In-situ doped and tensily stained ge junctionless gate-all-around nFETs on SOI featuring Ion = 828 µA/µm, Ion/Ioff ∼ 1×105, DIBL= 16–54 mV/V, and 1.4X external strain enhancement.

Author: I-Hsieh Wong, Yen-Ting Chen, Shih-Hsien Huang, Wen-Hsien Tu, Yu-Sheng Chen, Tai-Cheng Shieh, Tzu-Yao Lin, Huang-Siang Lan, and Liu, C. W.
Published: 2014
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