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Your search keyword '"Ho-Ming Tong"' showing total 14 results
Start Over Author "Ho-Ming Tong" Publication Type Conference Materials
14 results on '"Ho-Ming Tong"'

4. Low temperature (

Author

Yan-Pin Huang, Ruoh-Ning Tzeng, Yu-San Chien, Ming-Shaw Shy, Teu-Hua Lin, Kuo-Hua Chen, Ching-Te Chuang, Wei Hwang, Chi-Tsung Chiu, Ho-Ming Tong, and Kuan-Neng Chen

Published
2013
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9. Investigation of ICP parameters for smooth tsvs and following cu plating process in 3D integration.

Author

Cheng-Hao Chiang, Yu-Chen Hu, Kuo-Hua Chen, Chi-Tsung Chiu, Ching-Te Chuang, Wei Hwang, Jin-Chern Chiou, Ho-Ming Tong, and Kuan-Neng Chen

Abstract

Bosch reactive ion etching is widely used for TSV formation. The micro-masking formed during etching can be successfully removed by adjusting the internal parameters during etching. The smooth high-aspect-ratio TSVs were further developed in wafer-level fabrication. Finally, a two-step etching process was developed to achieve tapered TSVs for the following Cu plating process. [ABSTRACT FROM PUBLISHER]

Published
2012
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12. Micro-masking removal of TSV and cavity during ICP etching using parameter control in 3D and MEMS integrations.

Author

Yu-Chen Hu, Cheng-Hao Chiang, Kuo-Hua Chen, Chi-Tsung Chiu, Ching-Te Chuang, Wei Hwang, Jin-Chern Chiou, Ho-Ming Tong, and Kuan-Neng Chen

Abstract

In this paper, a detailed examination on TSV and cavity inductive coupled plasma (ICP) etching is presented. We investigated the relation such as etching loop number, TSV etching depth and etching rate. Due to particles knocked off from the hard mask and then fallen down to the TSV and cavity bottom, micro-masking issue becomes serious after ICP etching. In addition, parameters of isotropic etching, pressure, and RF bias were studied to investigate the process of micro-masking removal. [ABSTRACT FROM PUBLISHER]

Published
2012
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