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Your search keyword '"Egorysheva, A."' showing total 26 results
Start Over Author "Egorysheva, A." Publication Type Conference Materials
26 results on '"Egorysheva, A."'

3. Spectral and luminescent characteristics of La1-xPrxGa0.5Sb1.5O6, Bi1-xPrxGe0.5Sb1.5O6 (x = 0 - 0.5) solid solutions.

Author

Egorysheva, Anna, Gajtko, Olga, Golodukhina, Svetlana, Khrushchalina, Svetlana, Ryabochkina, Polina, Taratynova, Alina, Yurlov, Ivan, Gorokhovatsky, Yuriy, Temnov, Dmitry, Kapralova, Viktoria, Sudar, Nicolay, and Velichko, Elena

Subjects
PRASEODYMIUM, SOLID solutions, PHOSPHORS, COMPARATIVE studies, IONS
Abstract

Recently, a lot of research has focused on the search for high-performance phosphors with high quantum yield. Compounds with a rosiaite structure are proposed as a promising matrix for phosphors. Due to the structural features of rosiaites, the distance between neighboring RE ions is ≥5 Å, which reduces the probability of concentration quenching. This paper presents the results of a comparative analysis of the spectral-luminescent properties of La1-xPrxGa0.5Sb1.5O6, Bi1-xPrxGe0.5Sb1.5O6, (x = 0.01, 0.05, 0.1, 0.25, 0.5) solid solutions. [ABSTRACT FROM AUTHOR]

Published
2020
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10. Optical Spectroscopy Characterization of Se-doped Bi12SiO20 Crystals.

Author

Kostova, B., Milenov, T., Rafailov, P., Egorysheva, A., Yankova, L., Veleva, M., Dobreva, S., and Skorikov, V.

Subjects
OPTICAL spectroscopy, PROPERTIES of matter, ELECTRONS, CRYSTALLOGRAPHY, ABSORPTION
Abstract

Crystals of Bi12SiO20 doped with Se (BSO:Se) are grown by the Czochralski method. The measured concentration of Se is 1.75×1018 N/cm-3 and an additional increase of the Fe concentration from 1.9×1018 N/cm-3 (undoped Bi12SiO20) to 6.4×1018 N/cm-3 (BSO:Se) is also detected. The lattice parameter of BSO:Se is 10.096 Å. It is assumed that the doping takes place in the tetrahedral positions by replacement of 3Si4+ ions by (Se6++2Fe3+) ions. The doping is found to cause an increase of the absorption coefficient practically in the entire spectral interval (1.4–3.1 eV) studied by optical absorption spectroscopy. Such an effect is typical for all Fe-doped Bi12SiO20 crystals. The weak bands situated in the 1.4–2.1 eV spectral range should be attributed to crystal-field induced transitions of Fe3+ as well as of other uncontrolled impurities as Cr4+, Ni2+ and Co2+. [ABSTRACT FROM AUTHOR]

Published
2010
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11. Raman Spectroscopy Characterization of Se- Doped Bi12SiO20 Crystals.

Author

Milenov, T. I., Rafailov, P. M., Thomsen, C., Egorysheva, A. V., Titorenkova, R., Yankova, L., Veleva, M. N., Dobreva, S., and Skorikov, V. M.

Subjects
RAMAN spectroscopy, RAMAN effect, SEMICONDUCTOR doping, CRYSTALLOGRAPHY, CRYSTALS
Abstract

Crystals of BSO doped with Se are successfully grown by the Czochralski method. The measured concentration of Se is 1.75×1018 cm-3 and of Fe is 6.4×1018 cm-3, i.e. the concentration of Fe is significantly increased. It is assumed that the doping takes place through the replacement 3Si4+→(Se6++2Fe3+). The doping-induced shift of the Raman-active A, E and F-modes is not significant and it is concluded that the lattice distortions caused by doping are very small in BSO crystals doped with Se at low concentrations. The doping with Se at high concentration leads to occasional second phase inclusions. It is observed that all A, E and F- modes in the Raman spectrum are downshifted with 2–5 cm-1. It is concluded that the doping with Se at high concentrations follows the same mechanism as those with low concentrations but the introduced lattice distortions are more significant. [ABSTRACT FROM AUTHOR]

Published
2010
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