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The aim of this study was to determine composition of the leg bone tissue of rats that were exposed to simulated microgravity by Hind-Limb Suspension (HLS) by tail for one week. The leg bones were cross sectioned, cleaned of soft tissues, dried and sputter coated, and then placed horizontally on the stage of a Scanning Electron Microscope (SEM) for analysis. Interaction of a 17.5 keV electron beam, incident from the vertical direction on the sample, generated images using two detectors. X-rays emitted from the sample during electron bombardment were measured with an Energy Dispersive Spectroscopy (EDS) feature of SEM using a liquid-nitrogen cooled Si(Li) detector with a resolution of 144 eV at 5.9 keV (25Mn Kα x-ray). Kα- x-rays from carbon, oxygen, phosphorus and calcium formed the major peaks in the spectrum. Relative percentages of these elements were determined using a software that could also correct for ZAF factors namely Z(atomic number), A(X-ray absorption) and F(characteristic fluorescence). The x-rays from the control groups and from the experimental (HLS) groups were analyzed on well-defined parts (femur, tibia and knee) of the leg bone. The SEM analysis shows that there are definite changes in the hydroxyl or phosphate group of the main component of the bone structure, hydroxyapatite [Ca10(PO4)6(OH)2], due to hind limb suspension. In a separate experiment, entire leg bones (both from HLS and control rats) were subjected to mechanical stress by mean of a variable force. The stress vs. strain graph was fitted with linear and polynomial function, and the parameters reflecting the mechanical strength of the bone, under increasing stress, were calculated. From the slope of the linear part of the graph the Young's modulus for HLS bones were calculated and found to be 2.49 times smaller than those for control bones. [ABSTRACT FROM AUTHOR]

The CD-SEM has been the tool of choice for the imaging and metrology of semiconductor devices for the past three decades but now, with critical dimensions at the nanometer scale, electron beam instruments can no longer deliver adequate performance. A scanning microscope using a He+ ion beam offers superior resolution and depth of field, and provides enhanced imaging contrast. Device metrology performed using ion beam imaging produces data which is comparable to or better than that from a conventional CD-SEM although there are significant differences in the experimental conditions required and in the details of image formation. The charging generated by a He+ beam, and the sample damage that it can cause, require care in operation but are not major problems. [ABSTRACT FROM AUTHOR]

The performance of the conventional low-energy CD-SEM is limited by the aberrations inherent in the probe forming lens. Multi-pole correctors are now available which can reduce or eliminate these aberrations. An SEM equipped with such a corrector offers higher spatial resolution and more probe current from a given electron source, and other aspects of the optical performance are also improved, but the much higher numerical aperture associated with an aberration corrected lens results in a reduction in imaging depth of field. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]

The continued dominance of electron-beam instruments as the tool of choice for metrology is threatened by the requirements demanded for sub-100nm device structures. The key factors required for effective metrology are identified, the limitations of existing instruments are considered, and a new type of microscope tool for metrology which avoids this limitations is proposed. [ABSTRACT FROM AUTHOR]