Search

40 MeV Si channeling studies have been performed on the strained In0.1Ga0.9As layer grown on GaAs substrate using Molecular Beam Epitaxy (MBE). Three samples with different layer thickness have been investigated in this study. Channeling experiment has been fully automated so as to minimize the radiation damage. Suitable software and hardware have been developed to control the precision goniometer using the CAMAC (Computer automation and control) based data acquisition system. In low energy He channeling, strain measurements are often misled by the beam steering effects caused due to broad critical angles if the strain is very low. Such effects can be minimized by increasing the probing beam energy as the channeling critical angle is inversely proportional to the square root of the incident energy. Hence small angular misalignments can also be resolved in the high energy channeling experiments. Heavy ions are chosen so as to have reasonably high scattering cross-section and also to avoid the nuclear reactions. © 2003 American Institute of Physics [ABSTRACT FROM AUTHOR]

High Resolution X-Ray Diffraction (HRXRD) studies have been performed to study the effects of Swift Heavy Ion (SHI) irradiation on In0.53Ga0.47As/InP lattice matched superlattice. Sample under the study have been irradiated using 130 MeV Ag ions to two different fluences (5 × 1012 ions/cm2 & 5 × 1013 ions/cm2). Pre and post irradiation annealing (RTA) studies have also been performed. A finite tensile lattice strain has been introduced due to the intermixing caused by ion irradiation and/or annealing processes. The superlattice period is found to increase due to ion irradiation and annealing processes. The superlattice structure used in this work was grown by Metal Organic Chemical Vapor-phase epitaxial Deposition (MOCVD). Ion channeling measurements were earlier performed on the low dose sample. Channeling and HRXRD measurements show good crystalline/interface quality of pristine and processed samples. HRXRD also indicates the existence of the sharp boundaries across the superlattice interfaces. A decreasing modulation of the intensities of satellite peaks is caused by a gradual diffusion of individual layer interface. Such effects are more prominent for the irradiated and annealed sample. © 2003 American Institute of Physics [ABSTRACT FROM AUTHOR]