1. Some electrical properties of p-Si–n-(Si2)1-y(GaN)y structures obtained by epitaxy of (Si2)1-y(GaN)y solid solutions on silicon substrates from liquid-phase.
- Author
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Saidov, Amin, Usmonov, Shukrullo, Saparov, Dadajon, Ishniyazov, Tolmas, Gaimnazarov, Kurban, Niyazov, Shavqiddin, and Sattarkulov, Komil
- Subjects
SCANNING force microscopy ,SPACE charge ,ELECTRIC currents ,CURRENT-voltage characteristics ,ATOMIC force microscopy - Abstract
Solid solutions of molecular substitution (Si
2 )1-y (GaN)y were grown from the liquid phase of a tin solution- melt. Single-crystal silicon washers of crystallographic orientation (111), 0.4 mm thick and 20 mm in diameter, were used as substrates. The substrates had p-type conductivity with a resistivity of 10 mΩ·cm and were doped with boron. The grown epitaxial layers were not specially doped, but had n-type conductivity with a resistivity of 1400 mΩ·cm. The mobility of electrons - intrinsic current carriers in (Si2 )1-y (GaN)y solid solutions, measured by the Hall method at room temperature, was 130 cm2 /(V·s). The epitaxial layers had a single-crystal structure with crystallographic orientation (111). The whole surface of the substrate was covered with an epitaxial film with strong adhesion. The film thickness over the entire surface was the same and amounted to 15 µm. Scanning atomic force microscopy of the surface of epitaxial films showed that on a smooth surface area with a roughness of no more than 5 nm, "bulges" are observed with a base size on average of ∼100 nm and a height reaching ∼28 nm. It is shown that the initial section of the direct branch of the current-voltage characteristic of the p-Si–n-(Si2)1-y (GaN)y heterostructure from zero to 0.2 V is described by an exponential dependence – I = I0 × exp(qV/ckT), which indicates the dominant role of the diffusion mechanism in the transfer of electric current. When the voltage increases to 1.0 V, the recharging of adhesion centers plays a dominant role, which leads to an ohmic dependence of the current-voltage characteristic. Further, at voltages of 1.2 – 2.5 V, a power-law dependence is observed – I = A · V2.7 , which indicates the influence of defect-impurity complexes on the modulation of the space charge in the base region of the structure under study, and, accordingly, on the transfer of electric current. The results are explained based on a model of dielectric relaxation of a space charge, which takes into account the inertia of electron exchange inside recombination complexes. [ABSTRACT FROM AUTHOR]- Published
- 2024
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