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Your search keyword '"Kret S"' showing total 11 results
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11 results on '"Kret S"'

3. Structure of Magnetically Ordered Si:Mn

Author

Bak-Misiuk, Jadwiga, primary, Dynowska, E., additional, Romanowski, P., additional, Shalimov, A., additional, Misiuk, Andrzej, additional, Kret, S., additional, Dluzewski, P., additional, Domagala, J., additional, Caliebe, Wolfgang, additional, Dabrowski, J., additional, and Prujszczyk, M., additional

Published
2007
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10. Quantitative measurements of the inhomogeneous strain field of stacked self-assembled InAs/InP(001) quantum wires by the Peak Finding Method.

Author

Cullis, A. G., Hutchison, J. L., Ben, T., Molina, S. I., García, R., Fuster, D., González, M. U., González, L., González, Y., and Kret, S.

Abstract

Stacks of InAs self-assembled quantum wires (QWr) grown by solid source molecular beam epitaxy on InP (001) substrates have been studied by both transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). Samples with an InP spacer layer thickness ≤ 10 nm are shown to exhibit stacked quantum wires well arranged along directions close to [001]. The analysis of some HRTEM images by the Peak Finding Method demonstrates the existence of an inhomogeneous strain field distribution throughout the InP spacer layers. The growth front of the InP spacer layers shows the lowest stress for the growth of further InAs wires on the areas located on top of each buried wire. The InAs wires are preferentially formed on these lowest stress surface areas. [ABSTRACT FROM AUTHOR]

Published
2005
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11. Chemical composition and strain distribution of InAs/GaAs(001) stacked quantum rings.

Author

Cullis, A. G., Hutchison, J. L., Ben, T., Sánchez, A. M., Molina, S. I., Granados, D., García, J. M., and Kret, S.

Abstract

The strain and composition distributions of InAs/GaAs(001) stacked self-assembled quantum rings (QRs) grown by MBE have been analyzed. Transmission electron microscopy (TEM) images revealed a high degree of vertical arrangement of quantum rings for samples spaced by a GaAs spacer layer thickness ts < 6 nm. The peak finding method was applied to high resolution transmission electron micrographs in order to plot strain maps, revealing that the higher strained areas were in the ring core and close to it. The existence of another layer with similar strain to the wetting layer was also clear from the peak finding strain analysis. The transverse compositional profiles taken from 002 DF TEM images show the existence of In-rich regions within the nano-rings and an In(Ga)As well defined layer surrounding them, which is formed during the growth process. [ABSTRACT FROM AUTHOR]

Published
2005
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